STACKED-GATE SUPER-JUNCTION MOSFET

• US 20180012994A1
• Filed: 08/01/2016
• Published: 01/11/2018
• Est. Priority Date: 07/08/2016
• Status: Active Grant

• Current Assignee: Semiconductor Components Industries LLC (ON Semiconductor Corporation)
• Original Assignee: Semiconductor Components Industries LLC (ON Semiconductor Corporation)
• Inventors: LOECHELT, Gary H., GRIVNA, Gordon M.
• Granted Patent: US 9,859,419 B1
• Time in Patent Office: Days
• CPC Class Codes: H01L 21/26513 of electrically active species
• CPC Class Codes: H01L 29/0623 Buried supplementary region, e.g. buried guard ring multi-RESURF H01L29/0634
• CPC Class Codes: H01L 29/0634 Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
• CPC Class Codes: H01L 29/36 characterised by the concentration or distribution of impurities in the bulk material within semiconductor regions H01L29/06
• CPC Class Codes: H01L 29/66666 Vertical transistors H01L29/66712, H01L29/66742 take precedence
• CPC Class Codes: H01L 29/66734 with a step of recessing the gate electrode, e.g. to form a trench gate electrode
• CPC Class Codes: H01L 29/7805 in antiparallel, e.g. freewheel diode
• CPC Class Codes: H01L 29/7811 with an edge termination structure guard regions per se H01L29/0619; field plates per se H01L29/402
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236
• CPC Class Codes: H01L 29/7827 Vertical transistors H01L29/7802, H01L29/78642 take precedence

Abstract

A MOSFET having a stacked-gate super-junction design and novel termination structure. At least some illustrative embodiments of the device include a conductive (highly-doped with dopants of a first conductivity type) substrate with a lightly-doped epitaxial layer. The volume of the epitaxial layer is substantially filled with a charge compensation structure having vertical trenches forming intermediate mesas. The mesas are moderately doped via the trench sidewalls to have a second conductivity type, while the mesa tops are heavily-doped to have the first conductivity type. Sidewall layers are provided in the vertical trenches, the sidewall layers being a moderately-doped semiconductor of the first conductivity type. The shoulders of the sidewall layers are recessed below the mesa top to receive an overlying gate for controlling a channel between the mesa top and the sidewall layer. The mesa tops are coupled to a source electrode, while a drain electrode is provided on the back side of the substrate.

Claims

1. A semiconductor device that comprises:

a substrate, the substrate being a highly-doped semiconductor of a first type;

at least one epitaxial layer on a front side of the substrate with a lower doping concentration than the substrate;

a charge compensation structure substantially filling a volume of the epitaxial layer, the charge compensation structure comprising;

one or more vertical trenches forming one or more intermediate mesas, the one or more intermediate mesas being a moderately-doped semiconductor of a second type, with each of the one or more intermediate mesas having a mesa top that is a highly-doped semiconductor of the first type;

a sidewall layer in the one or more vertical trenches, the sidewall layer comprising a moderately-doped semiconductor of the first type, wherein the sidewall layer is recessed lower than the mesa top to receive an overlying gate for controlling a channel between the mesa top and the sidewall layer, the gate overlapping at least a portion of the sidewall layer to extend the channel into the sidewall layer; and

a drain electrode on a back side of the substrate;

a source electrode that couples to the one or more mesa tops;

a gate electrode coupled to the one or more overlying gates; and

a thin insulating layer separating the overlying gate from the mesa top, the channel, and the sidewall layer, wherein the thin insulating layer and channel each extend vertically and horizontally beneath the gate.

2. The semiconductor device of claim 1, wherein the at least one epitaxial layer comprises a lightly-doped or intrinsic semiconductor, and the one or more intermediate mesas are more heavily doped than the epitaxial layer.

3. The semiconductor device of claim 1, wherein the channel lies within a body well ohmically coupled to the source electrode.

4. The semiconductor device of claim 1, wherein the sidewall layer couples ohmically to the substrate via trench bottom implants of the first type.

5. The semiconductor device of claim 1, further comprising an insulating trench fill between the sidewall layer in the one or more vertical trenches and below the overlying gate.

6. The semiconductor device of claim 1, wherein the channel is angled to provide said vertical and horizontal extent.

8. The semiconductor device of claim 1, wherein the substrate and at least one epitaxial layer comprise silicon.

9. The semiconductor device of claim 1, wherein said first type is n-type and said second type is p-type.

10. The semiconductor device of claim 1, wherein said first type is p-type and said second type is n-type.

11. The semiconductor device of claim 1, wherein the at least one epitaxial layer comprises two lightly-doped layers having an intermediate p-n interface that hinders vertical current flow around the charge compensation structure.

7. (canceled)

12-21. -21. (canceled)