LIGHT-EMITTING DIODE (LED), LED PACKAGE AND APPARATUS INCLUDING THE SAME

• US 20180013042A1
• Filed: 09/14/2017
• Published: 01/11/2018
• Est. Priority Date: 08/26/2015
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: YOO, Ha-nul, KIM, Yong-il, CHA, Nam-goo, LIM, Wan-tae, HWANG, Kyung-wook, SIM, Sung-hyun, NOH, Hye-seok
• Granted Patent: US 10,243,123 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48237 connecting the wire to a die pad of the item
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48257 connecting the wire to a die pad of the item
• CPC Class Codes: H01L 2224/48465 the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/181 Encapsulation
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/145 with a current-blocking structure
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/50 Wavelength conversion elements
• CPC Class Codes: H01L 33/502 Wavelength conversion materials
• CPC Class Codes: H01L 33/60 Reflective elements

Abstract

A light-emitting diode (LED) package includes a light-emitting structure, an optical wavelength conversion layer on the light-emitting structure, and an optical filter layer on the optical wavelength conversion layer. The light-emitting structure includes a first-conductivity-type semiconductor layer, an active layer on the first-conductivity-type semiconductor layer, and a second-conductivity-type semiconductor layer on the active layer, and emits first light having a first peak wavelength. The optical wavelength conversion layer absorbs the first light emitted from the light-emitting structure and emits second light having a second peak wavelength different from the first peak wavelength. The optical filter layer reflects the first light emitted from the light-emitting structure and transmits the second light emitted from the optical wavelength conversion layer.

Claims

1. A multi-color light-emitting apparatus comprising:

first, second, and third light-emitting structures each including a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active layer between the first and second-conductivity-type semiconductor layers;

a first optical wavelength conversion layer on a upper surface of the first-conductivity-type semiconductor layer of the first light-emitting structures;

a first optical filter layer on an upper surface of the first optical wavelength conversion layer;

a reflection layer on a lateral surface of the first optical wavelength conversion layer;

a first electrode electrically connected to the first-conductivity-type semiconductor layer;

a second electrode arranged on a lower surface of the second-conductivity-type semiconductor layer and electrically connected to the second-conductivity-type semiconductor layer,

wherein lateral surfaces of the first optical filter layer and the reflection layer are substantially coplanar.

2. The multi-color light-emitting apparatus of claim 1, further comprising:

a first metal post and a second metal post arranged on and connected to the first electrode and the second electrode, respectively; and

a lateral encapsulation supporting the first, second, and third light-emitting structures and the first and second electrodes, wherein the lateral encapsulation provides electrical insulation between the first metal post and the second metal post.

3. The multi-color light-emitting apparatus of claim 1, wherein a planar area of the third light-emitting structure is smaller than a planar area of the first light-emitting structure or the second light-emitting structure.

4. The multi-color light-emitting apparatus of claim 1, further comprising a second optical wavelength conversion layer containing a material different from a material contained in the first optical wavelength and arranged on an upper surface of the first-conductivity-type semiconductor layer of the second light-emitting structures.

5. The multi-color light-emitting apparatus of claim 1, further comprising a transparent substrate on the first optical filter layer.

6. The multi-color light-emitting apparatus of claim 1, wherein configurations of the first, second, and third light-emitting structures are substantially identical to one another.

7. The multi-color light-emitting apparatus of claim 1, wherein the first optical filter layer has a multi-layer structure including first and second dielectric films arranged alternately, wherein the first dielectric film has a first refractive index and a first thickness and the second dielectric film has a second refractive index and a second thickness.

8. The multi-color light-emitting apparatus of claim 1, wherein the first, second, and third light-emitting structures are configured to emit light included in a blue visible light wavelength band.

9. The multi-color light-emitting apparatus of claim 1, further comprising a second optical filter layer on the second optical wavelength conversion layer.

10. The multi-color light-emitting apparatus of claim 9, wherein a thickness of the second optical filter layer is different from a thickness of the first optical filter layer.

11. The multi-color light-emitting apparatus of claim 9, wherein a dielectric constant of at least a portion of the second optical filter layer is different from a dielectric constant of at least a portion of the first optical filter layer.

12. A display device comprising:

a plurality of pixels each including a first subpixel having a first LED, wherein the first LED includes;

a first light-emitting structure including a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer and an active layer disposed between the first and second-conductivity-type semiconductor layers;

a first optical wavelength conversion layer on an upper surface of the first-conductivity-type semiconductor layer;

a first optical filter layer on the first optical wavelength conversion layer;

a reflection layer on a lateral side of the first optical wavelength conversion layer;

a first electrode configured to be electrically connected to the first-conductivity-type semiconductor layer;

a second electrode arranged on a lower surface of the second-conductivity-type semiconductor layer and configured to be electrically connected to the second-conductivity-type semiconductor layer,

wherein lateral side surfaces of the first optical filter layer and the reflection layer are substantially coplanar.

13. The display device of claim 12, further comprising:

a first metal post and a second metal post connected to the first electrode and the second electrode, respectively; and

a lateral encapsulation supporting the first and second electrodes, wherein the lateral encapsulation provides electrical insulation between the first metal post and the second metal post.

14. The display device of claim 12, wherein each of the plurality of pixels comprises a second subpixel having a second LED different from the first LED.

15. The display device of claim 14, wherein each of the plurality of pixels comprises a third subpixel having a third LED different from the first and second LEDs.

16. The display device of claim 14, wherein the second LED includes:

a second light-emitting structure including a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer and an active layer arranged between the first and second-conductivity-type semiconductor layers;

a second optical wavelength conversion layer containing a material different from a material contained in the first optical wavelength and arranged on an upper surface of the first-conductivity-type semiconductor layer of the second light-emitting structures; and

a second optical filter layer arranged on the second optical wavelength conversion layer.

17. The display device of claim 16, wherein the first LED is configured to emit green light and the second LED is configured to emit red light.

18. The display device of claim 12, further including a transparent substrate on the first and second optical filter layers.

19. The display device of claim 16, wherein a configuration of the first light-emitting structure and a configuration of the second light-emitting structure is substantially identical to one another.

20. The display device of claim 12, wherein the first optical filter layer has a multi-layer structure including first and second dielectric films arranged alternately, and wherein the first dielectric film has a first refractive index and a first thickness and the second dielectric film has a second refractive index and a second thickness.