SIC EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SIC EPITAXIAL WAFER
First Claim
Patent Images
1. An SiC epitaxial wafer comprising an SiC epitaxial layer formed on an SiC single crystal substrate having an offset angle of 4 degrees or less in a <
- 11-20>
direction from a (0001) plane,wherein a trapezoidal defect included in the SiC epitaxial wafer comprises an inverted trapezoidal defect in which a length of a lower base on a downstream side of a step flow is equal to or less than a length of an upper base on an upstream side of the step flow.
3 Assignments
0 Petitions
Accused Products
Abstract
An SiC epitaxial wafer having an SiC epitaxial layer formed on an SiC single crystal substrate having an offset angle of 4 degrees or less in a <11-20> direction from a (0001) plane. A trapezoidal defect included in the SiC epitaxial wafer includes an inverted trapezoidal defect in which a length of a lower base on a downstream side of a step flow is equal to or less than a length of an upper base on an upstream side of the step flow. Also disclosed is a method for manufacturing the SiC epitaxial wafer.
8 Citations
7 Claims
-
1. An SiC epitaxial wafer comprising an SiC epitaxial layer formed on an SiC single crystal substrate having an offset angle of 4 degrees or less in a <
- 11-20>
direction from a (0001) plane,wherein a trapezoidal defect included in the SiC epitaxial wafer comprises an inverted trapezoidal defect in which a length of a lower base on a downstream side of a step flow is equal to or less than a length of an upper base on an upstream side of the step flow. - View Dependent Claims (2, 3, 4, 5, 6, 7)
- 11-20>
Specification