MASK PATTERN FORMING METHOD, FINE PATTERN FORMING METHOD, AND FILM DEPOSITION APPARATUS

• US 20180019113A1
• Filed: 09/25/2017
• Published: 01/18/2018
• Est. Priority Date: 09/29/2008
• Status: Active Grant

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: HASEBE, Kazuhide, NAKAJIMA, Shigeru, OGAWA, Jun, MURAKAMI, Hiroki
• Granted Patent: US 10,141,187 B2
• Time in Patent Office: Days
• CPC Class Codes: C23C 16/02 Pretreatment of the material to be coated C23C16/04 takes precedence
• CPC Class Codes: C23C 16/402 Silicon dioxide
• CPC Class Codes: C23C 16/403 of aluminium, magnesium or beryllium
• CPC Class Codes: C23C 16/45536 Use of plasma, radiation or electromagnetic fields
• CPC Class Codes: G03F 7/40 Treatment after imagewise removal, e.g. baking
• CPC Class Codes: H01J 37/32091 the radio frequency energy being capacitively coupled to the plasma
• CPC Class Codes: H01J 37/3244 Gas supply means
• CPC Class Codes: H01J 37/32834 Exhausting
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/02178 the material containing aluminium, e.g. Al2O3
• CPC Class Codes: H01L 21/02219 the compound comprising silicon and nitrogen
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
• CPC Class Codes: H01L 21/027 Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 photographic masks or originals per se G03F1/00; registration or positioning of photographic masks or originals G03F9/00; photographic cameras G03B; control of position G05D3/00
• CPC Class Codes: H01L 21/0274 Photolithographic processes
• CPC Class Codes: H01L 21/0337 characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
• CPC Class Codes: H01L 21/0338 Process specially adapted to improve the resolution of the mask
• CPC Class Codes: H01L 21/31138 by dry-etching
• CPC Class Codes: H01L 21/31144 using masks
• CPC Class Codes: H01L 21/31608 Deposition of SiO2 H01L21/31625, H01L21/31629 and H01L21/31633 take precedence
• CPC Class Codes: H01L 21/31616 : Deposition of Al2O3
• CPC Class Codes: H01L 21/32139 : using masks
• CPC Class Codes: H01L 21/76816 : Aspects relating to the layout of the pattern or to the size of vias or trenches layout of the interconnections per se H01L23/528; CAD of ICs G06F30/00

Abstract

In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.

Claims

1. A mask pattern forming method comprising steps of:

loading a substrate which has a thin film and a patterned film on the thin film, into a process chamber, the patterned film having a line and a space therein;

slimming the patterned film in the process chamber and

forming an oxide film on the patterned film and the thin film in the process chamber by performing a cycle of adsorbing a source gas on the thin film and the patterned film and oxidizing the source gas on the thin film and the patterned film a predetermined number of times such that the deposited oxide film has a predetermined thickness,

wherein the steps of slimming the patterned film and forming the oxide film are performed in the same process chamber.

2. The mask pattern forming method according to claim 1, wherein the steps of slimming the patterned film and forming the oxide film are continuously performed.

3. The mask pattern forming method according to claim 1, wherein the patterned film is a resist film.

4. The mask pattern forming method according to claim 1, wherein, at the step of loading the substrate, a width of the line is approximately equal to a width of the space.

5. The mask pattern forming method according to claim 1, wherein a ratio of a width of the slimmed line to a width of a space between the slimmed lines is 1:

3.

6. The mask pattern forming method according to claim 1, wherein the predetermined thickness of the oxide film is approximately equal to a width of the slimmed line.

7. The mask pattern forming method according to claim 1, wherein a width of a space between the oxide films is approximately equal to a width of the slimmed line.

8. The mask pattern forming method according to claim 1, wherein the predetermined thickness of the oxide film is approximately equal to a width of the slimmed line and a width of a space between the oxide films.

9. The mask pattern forming method according to claim 1, wherein the step of forming the oxide film is performed after the step of slimming the patterned film.

10. The mask pattern forming method according to claim 1, wherein the steps of slimming the patterned film and forming the oxide film are performed by using an oxygen-containing gas.

11. The mask pattern forming method according to claim 10, wherein the steps of slimming the patterned film and forming the oxide film are performed by generating plasma of the oxygen-containing gas.

12. The mask pattern forming method according to claim 10, wherein, at the steps of slimming the patterned film and forming the oxide film, the oxygen-containing gas is supplied from a same oxygen-containing gas supply source.

13. The mask pattern forming method according to claim 1, further comprising:

purging the process chamber between the steps of slimming the patterned film and forming the oxide film.

14. The mask pattern forming method according to claim 1, wherein temperatures at which the patterned film is slimmed and at which the oxide film is formed on the patterned film are below a heat-resisting temperature of the patterned film.

15. The mask pattern forming method according to claim 1, wherein temperatures at which the patterned film is slimmed and at which the oxide film is formed on the patterned film are below 100 degrees C.

16. The mask pattern forming method according to claim 1, wherein the source gas contains silicon.

17. The mask pattern forming method according to claim 16, wherein the source gas contains organic silicon.

18. The mask pattern forming method according to claim 17, wherein the source gas is an aminosilane-based precursor.

19. The mask pattern forming method according to claim 18, wherein the aminosilane-based precursor is bis-diethylamino silane.

20. The mask pattern forming method according to claim 1, wherein the source gas contains metal.

21. The mask pattern forming method according to claim 20, wherein the source gas contains organic metal.

22. The mask pattern forming method according to claim 1, further comprising:

etching the oxide film so that the oxide film remains as a side wall part on a side face of the line.

23. The mask pattern forming method according to claim 22, further comprising:

removing the patterned film so that the side wall part of the oxide film remains on the thin film.

24. A fine pattern forming method comprising steps of:

forming a mask pattern on the thin film by performing the mask pattern forming method according to claim 22; and

etching the thin film by using the mask pattern, to form a thin film pattern.

25. The mask pattern forming method according to claim 1, wherein the oxide film formed at the step of forming the oxide film comprises silicon.

26. The mask pattern forming method according to claim 1, wherein the oxide film comprises nitrogen.

27. The mask pattern forming method according to claim 1, wherein the oxide film formed at the step of forming the oxide film comprises metal.

28. The mask pattern forming method according to claim 1, wherein the oxide film formed at the step of forming the oxide film comprises silicon and metal.