INTERCONNECTION STRUCTURE AND METHOD OF FORMING THE SAME
First Claim
1. An interconnection structure, comprising:
- a dielectric structure;
an anti-adhesion layer; and
a conductive structure, wherein a central portion of the conductive structure is surrounded by the anti-adhesion layer such that the central portion of the conductive structure is separated from a first portion of the dielectric structure by the anti-adhesion layer.
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Abstract
An interconnection structure includes a non-insulator structure, a liner layer, a dielectric structure and a conductive structure. The liner layer is present on the non-insulator structure and has an opening therein. The dielectric structure is present on the liner layer. The dielectric structure includes a via opening therein. The conductive structure is present in the via opening of the dielectric structure and electrically connected to the non-insulator structure through the opening of the liner layer. At least a portion of the conductive structure tapers along a direction from the non-insulator structure to the dielectric structure.
1 Citation
20 Claims
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1. An interconnection structure, comprising:
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a dielectric structure; an anti-adhesion layer; and a conductive structure, wherein a central portion of the conductive structure is surrounded by the anti-adhesion layer such that the central portion of the conductive structure is separated from a first portion of the dielectric structure by the anti-adhesion layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. An interconnection structure, comprising:
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a non-insulator structure; a liner layer over the non-insulator structure; a dielectric structure over the liner layer; and a conductive structure extending through the dielectric structure and the liner layer and electrically connected to the non-insulator structure, wherein the conductive structure is in contact with a first sidewall of the dielectric structure, a sidewall of the liner layer, and a top surface of the non-insulator structure. - View Dependent Claims (13, 14, 15)
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16. A method of forming an interconnection structure, comprising:
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defining a recess within a dielectric structure; forming an anti-adhesion layer on at least one sidewall of the dielectric structure defining the recess, wherein; the anti-adhesion layer comprises an upper portion, a sidewall portion, and a bottom portion, and a portion of the dielectric structure underlies the bottom portion of the anti-adhesion layer; and removing the upper portion of the anti-adhesion layer, the bottom portion of the anti-adhesion layer, and the portion of the dielectric structure underlying the bottom portion of the anti-adhesion layer. - View Dependent Claims (17, 18, 19, 20)
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Specification