APPARATUS FOR MANUFACTURING A SECOND SUBSTRATE ON A FIRST SUBSTRATE INCLUDING REMOVAL OF THE FIRST SUBSTRATE
First Claim
1. An apparatus for manufacturing a substrate, the apparatus comprising:
- a deposition chamber housing that accommodates a growth substrate;
a first supply to supply a deposition gas for forming a target substrate on the growth substrate into the deposition chamber housing;
a susceptor to support the growth substrate and exposing a rear surface of the growth substrate;
an inner liner connected to the susceptor; and
a second supply to supply an etch gas to the rear surface of the growth substrate,wherein the inner liner is to isolate the etch gas from the deposition gas and guide the etch gas towards the rear surface of the growth substrate,wherein the susceptor includesa center hole to expose the rear surface of the growth substrate, anda support protrusion supporting the growth substrate, the support protrusion protruding toward the center of the center hole from an inner sidewall of the susceptor defining the center hole.
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Accused Products
Abstract
An apparatus includes a deposition chamber housing that accommodates a growth substrate, a supply nozzle to supply a deposition gas for forming a target large-size substrate on the growth substrate into the deposition chamber housing, a susceptor to support the growth substrate and expose a rear surface of the growth substrate to an etch gas, and an inner liner connected to the susceptor. The inner liner is to isolate the etch gas from the deposition gas and guide the etch gas toward the rear surface of the growth substrate. The susceptor includes a center hole that exposes the rear surface of the growth substrate and a support protrusion supporting the growth substrate, the support protrusion protruding toward the center of the center hole from an inner sidewall of the susceptor defining the center hole.
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Citations
20 Claims
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1. An apparatus for manufacturing a substrate, the apparatus comprising:
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a deposition chamber housing that accommodates a growth substrate; a first supply to supply a deposition gas for forming a target substrate on the growth substrate into the deposition chamber housing; a susceptor to support the growth substrate and exposing a rear surface of the growth substrate; an inner liner connected to the susceptor; and a second supply to supply an etch gas to the rear surface of the growth substrate, wherein the inner liner is to isolate the etch gas from the deposition gas and guide the etch gas towards the rear surface of the growth substrate, wherein the susceptor includes a center hole to expose the rear surface of the growth substrate, and a support protrusion supporting the growth substrate, the support protrusion protruding toward the center of the center hole from an inner sidewall of the susceptor defining the center hole. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. An apparatus for manufacturing a substrate, the apparatus comprising:
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a deposition section in which a deposition gas is supplied to deposit a second substrate material layer on a first substrate included in the deposition section; an etching section in which an etch gas is supplied to remove the first substrate by etching; a support between the deposition section and the etching section, wherein the support is to support the first substrate; and a controller to control deposition of the second substrate material layer and etching of the first substrate, wherein the controller is to initiate supply of the deposition gas prior to initiating the supply the etching gas, and timing of supply of the deposition gas and the supply of the etching gas at least partially overlap.
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16. An apparatus for manufacturing a substrate, the apparatus comprising:
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a support to support a first substrate, the support exposing a top surface and a rear surface of the first substrate; a deposition section in which a deposition gas is supplied to deposit a second substrate material layer on the top surface of the first substrate; an etching section in which an etch gas is supplied to remove the first substrate by etching the rear surface of the first substrate; and an isolation section to isolate the etch gas from the deposition gas. - View Dependent Claims (17, 18, 19, 20)
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Specification