APPARATUS FOR MANUFACTURING A SECOND SUBSTRATE ON A FIRST SUBSTRATE INCLUDING REMOVAL OF THE FIRST SUBSTRATE

• US 20180030617A1
• Filed: 07/05/2017
• Published: 02/01/2018
• Est. Priority Date: 07/26/2016
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd. (Samsung Group)
• Original Assignee: Samsung Electronics Co. Ltd. (Samsung Group)
• Inventors: KANG, Sam-mook, KIM, Jun-youn, TAK, Young-jo, KIM, Mi-hyun, PARK, Young-soo
• Granted Patent: US 10,900,142 B2
• Time in Patent Office: Days
• CPC Class Codes: C23C 16/01 on temporary substrates, e.g. substrates subsequently removed by etching
• CPC Class Codes: C23C 16/0272 Deposition of sub-layers, e.g. to promote the adhesion of the main coating
• CPC Class Codes: C23C 16/303 Nitrides
• CPC Class Codes: C23C 16/455 characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
• CPC Class Codes: C23C 16/4585 Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
• CPC Class Codes: C23C 16/52 Controlling or regulating the coating process C23C16/45557, C23C16/279 take precedence
• CPC Class Codes: C30B 25/12 Substrate holders or susceptors
• CPC Class Codes: C30B 25/14 Feed and outlet means for the gases; Modifying the flow of the reactive gases
• CPC Class Codes: C30B 25/165 the flow of the reactive gases
• CPC Class Codes: C30B 25/183 being provided with a buffer layer, e.g. a lattice matching layer
• CPC Class Codes: C30B 29/406 Gallium nitride
• CPC Class Codes: H01J 37/32403 Treating multiple sides of workpieces, e.g. 3D workpieces
• CPC Class Codes: H01J 37/3244 Gas supply means
• CPC Class Codes: H01J 37/32449 Gas control, e.g. control of the gas flow
• CPC Class Codes: H01J 37/32513 Sealing means, e.g. sealing between different parts of the vessel
• CPC Class Codes: H01J 37/32715 Workpiece holder
• CPC Class Codes: H01L 21/02002 Preparing wafers
• CPC Class Codes: H01L 21/02381 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/68721 : characterised by edge clamping, e.g. clamping ring
• CPC Class Codes: H01L 21/68735 : characterised by edge profile or support profile
• CPC Class Codes: H01L 21/7806 : involving the separation of the active layers from a substrate

Abstract

An apparatus includes a deposition chamber housing that accommodates a growth substrate, a supply nozzle to supply a deposition gas for forming a target large-size substrate on the growth substrate into the deposition chamber housing, a susceptor to support the growth substrate and expose a rear surface of the growth substrate to an etch gas, and an inner liner connected to the susceptor. The inner liner is to isolate the etch gas from the deposition gas and guide the etch gas toward the rear surface of the growth substrate. The susceptor includes a center hole that exposes the rear surface of the growth substrate and a support protrusion supporting the growth substrate, the support protrusion protruding toward the center of the center hole from an inner sidewall of the susceptor defining the center hole.

Claims

1. An apparatus for manufacturing a substrate, the apparatus comprising:

a deposition chamber housing that accommodates a growth substrate;

a first supply to supply a deposition gas for forming a target substrate on the growth substrate into the deposition chamber housing;

a susceptor to support the growth substrate and exposing a rear surface of the growth substrate;

an inner liner connected to the susceptor; and

a second supply to supply an etch gas to the rear surface of the growth substrate,

wherein the inner liner is to isolate the etch gas from the deposition gas and guide the etch gas towards the rear surface of the growth substrate,

wherein the susceptor includes

a center hole to expose the rear surface of the growth substrate, and

a support protrusion supporting the growth substrate, the support protrusion protruding toward the center of the center hole from an inner sidewall of the susceptor defining the center hole.

2. The apparatus as claimed in claim 1, wherein the support protrusion protrudes from the inner sidewall and extends along a circumference of the inner sidewall.

3. The apparatus as claimed in claim 1, wherein the support protrusion includes pillar-shaped protrusions extending from the inner sidewall toward the center of the center hole.

4. The apparatus as claimed in claim 1, wherein the susceptor includes an outlet port for discharging an etching product gas from an inner area defined by the inner liner, the etching product gas being a gas resulting from etching the growth substrate.

5. The apparatus as claimed in claim 4, wherein the outlet port extends through the susceptor, from the inner sidewall of the susceptor to an outer sidewall of the susceptor.

6. The apparatus as claimed in claim 5, wherein the susceptor includes a plurality of outlet ports arranged along a circumference of the susceptor.

7. The apparatus as claimed in claim 1, further comprising a susceptor cover at least partially covering an upper surface of the susceptor,

wherein the susceptor cover exposes an upper surface of the growth substrate, and a gap between an inner edge of the susceptor cover and an outer edge of the growth substrate is about 5 mm or less.

8. The apparatus as claimed in claim 1, further comprising:

a lifting support that supports the growth substrate through the center hole of the susceptor;

a vertical motion unit that moves the lifting support in a vertical direction with respect to the inner liner; and

a rotation unit that rotates the lifting support with respect to the inner liner.

9. The apparatus as claimed in claim 1, wherein the support protrusion includes:

a first portion protruding from the inner sidewall and extending along the circumference of the inner sidewall; and

second portions extending in a pillar shape from the first portion toward the center of the center hole.

10. The apparatus as claimed in claim 9, wherein the growth substrate has an insulating layer pattern having a width along an edge region of an upper surface of the growth substrate, and an inner edge of the insulating layer pattern is located on the second portions of the support protrusion.

11. The apparatus as claimed in claim 1, further comprising an exhaust tube in the inner liner to discharge an etching product gas from an inner area defined by the inner liner, the etching product gas being a gas resulting from etching the growth substrate.

12. The apparatus as claimed in claim 11, wherein:

a central axis of the exhaust tube is oriented towards a center of the growth substrate, and

the exhaust tube includes a baffle plate located at and radially extending from an end of the exhaust tube opposite to the rear surface of the growth substrate.

13. The apparatus as claimed in claim 12, wherein the baffle plate is slanted downward to have an increased distance from the growth substrate away from the central axis of the exhaust tube.

14. The apparatus as claimed in claim 1, wherein the growth substrate has a diameter of about 4 inches to about 18 inches.

15. An apparatus for manufacturing a substrate, the apparatus comprising:

a deposition section in which a deposition gas is supplied to deposit a second substrate material layer on a first substrate included in the deposition section;

an etching section in which an etch gas is supplied to remove the first substrate by etching;

a support between the deposition section and the etching section, wherein the support is to support the first substrate; and

a controller to control deposition of the second substrate material layer and etching of the first substrate,

wherein the controller is to

initiate supply of the deposition gas prior to initiating the supply the etching gas, and

timing of supply of the deposition gas and the supply of the etching gas at least partially overlap.

16. An apparatus for manufacturing a substrate, the apparatus comprising:

a support to support a first substrate, the support exposing a top surface and a rear surface of the first substrate;

a deposition section in which a deposition gas is supplied to deposit a second substrate material layer on the top surface of the first substrate;

an etching section in which an etch gas is supplied to remove the first substrate by etching the rear surface of the first substrate; and

an isolation section to isolate the etch gas from the deposition gas.

17. The apparatus as claimed in claim 16, wherein the support includes

a center hole to expose the rear surface of the first substrate, and

a support protrusion supporting the first substrate, the support protrusion protruding toward the center of the center hole from an inner sidewall of the support defining the center hole.

18. The apparatus as claimed in claim 17, wherein the support protrusion extends from an entire circumference of the center hole.

19. The apparatus as claimed in claim 17, wherein the support protrusion extends intermittently from a circumference of the center hole.

20. The apparatus as claimed in claim 17, wherein the support protrusion is about 25% or less than a total area of the center hole plus the support protrusion.