OXIDE SEMICONDUCTOR DEVICE

• US 20180033891A1
• Filed: 09/01/2016
• Published: 02/01/2018
• Est. Priority Date: 07/26/2016
• Status: Abandoned Application

• Current Assignee: United Microelectronics Corporation
• Original Assignee: United Microelectronics Corporation
• Inventors: PU, XIAODONG, Wu, Shao-Hui, YAO, HAI BIAO, Xing, Qinggang, Lai, Chien-Ming, Zhu, Jun, Tung, Yu-Cheng, ZHOU, ZHIBIAO
• Application Number:
  US15/253,908
• Publication Number:
  US 20180033891A1
• Time in Patent Office: Days
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/1248 with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
• CPC Class Codes: H01L 29/41725 Source or drain electrodes for field effect devices with monocrystalline semiconductor on source/drain region H01L29/0843
• CPC Class Codes: H01L 29/41733 for thin film transistors with insulated gate
• CPC Class Codes: H01L 29/42384 for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
• CPC Class Codes: H01L 29/78648 arranged on opposing sides of the channel
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

An oxide semiconductor device includes an oxide semiconductor transistor and a protection wall. The protection wall extends in a vertical direction and surrounds the oxide semiconductor transistor. The oxide semiconductor transistor includes a first oxide semiconductor layer, and a bottom surface of the protection wall is lower than the first oxide semiconductor layer in the vertical direction. In the oxide semiconductor device of the present invention, the protection wall is used to surround the oxide semiconductor transistor for improving the ability of blocking environment substances from entering the oxide semiconductor transistor. The electrical stability and product reliability of the oxide semiconductor device are enhanced accordingly.

Claims

1. An oxide semiconductor device, comprising:

an oxide semiconductor transistor, the oxide semiconductor transistor comprising a first oxide semiconductor layer; and

a protection wall extending in a vertical direction and surrounding the oxide semiconductor transistor, wherein a bottom surface of the protection wall is lower than the first oxide semiconductor layer in the vertical direction.

2. The oxide semiconductor device of claim 1, wherein from a top view of the oxide semiconductor device, the protection wall surrounds the oxide semiconductor transistor in a horizontal direction orthogonal to the vertical direction.

3. The oxide semiconductor device of claim 1, further comprising:

a first protection layer covering the oxide semiconductor transistor, wherein a top surface of the protection wall is higher than the first protection layer in the vertical direction.

4. The oxide semiconductor device of claim 3, wherein the protection wall penetrates the first protection layer.

5. The oxide semiconductor device of claim 3, wherein the oxide semiconductor transistor further comprising:

two source/drain electrodes, wherein the source/drain electrodes contact the first oxide semiconductor layer.

6. The oxide semiconductor device of claim 5, further comprising:

two source/drain contact structures disposed on the source/drain electrodes respectively, wherein the bottom surface of the protection wall is lower than the source/drain contact structures in the vertical direction.

7. The oxide semiconductor device of claim 5, wherein the oxide semiconductor transistor further comprising:

a first gate electrode disposed under the first oxide semiconductor layer; and

a first gate insulation layer, wherein at least a part of the first gate insulation layer is disposed between the first gate electrode and the first oxide semiconductor layer, and the source/drain electrodes are at least partially disposed on the first oxide semiconductor layer.

8. The oxide semiconductor device of claim 7, wherein the protection wall penetrates the first gate insulation layer.

9. The oxide semiconductor device of claim 7, further comprising:

a second protection layer disposed under the first gate electrode, wherein the protection wall directly contacts the second protection layer.

10. The oxide semiconductor device of claim 7, further comprising:

a second protection layer disposed between the first gate electrode and the first gate insulation layer, wherein the protection wall penetrates the second protection layer.

11. The oxide semiconductor device of claim 1, wherein the oxide semiconductor transistor further comprises:

a second gate electrode disposed above the first oxide semiconductor layer; and

a second gate insulation layer, wherein at least a part of the second gate insulation layer is disposed between the second gate electrode and the first oxide semiconductor layer.

12. The oxide semiconductor device of claim 11, wherein the protection wall penetrates the second gate insulation layer.

13. The oxide semiconductor device of claim 11, wherein the protection wall penetrates the first oxide semiconductor layer.

14. The oxide semiconductor device of claim 11, wherein the oxide semiconductor transistor further comprises:

two source/drain electrodes, wherein the source/drain electrodes are at least partially disposed on the first oxide semiconductor layer; and

a second oxide semiconductor layer disposed on the first oxide semiconductor layer and the source/drain electrodes, wherein a part of the second oxide semiconductor layer is disposed between the second gate insulation layer and each of the source/drain electrodes.

15. The oxide semiconductor device of claim 14, wherein the protection wall penetrates the second oxide semiconductor layer.

16. The oxide semiconductor device of claim 11, wherein the oxide semiconductor transistor further comprises:

two source/drain electrodes disposed under the first oxide semiconductor layer, wherein a part of the first oxide semiconductor layer is disposed between the second gate insulation layer and each of the source/drain electrodes.

17. The oxide semiconductor device of claim 16, further comprising:

a second protection layer disposed under the oxide semiconductor transistor, wherein the source/drain electrodes are disposed on the second protection layer, and the protection wall directly contacts the second protection layer.

18. The oxide semiconductor device of claim 17, wherein the protection wall penetrates the second protection layer.

19. The oxide semiconductor device of claim 1, wherein the protection wall comprises an insulation material.

20. The oxide semiconductor device of claim 1, wherein the protection wall comprises:

a conductive material; and

a barrier layer surrounding at least a part of the conductive material, wherein the protection wall is electrically floating.