SEMICONDUCTOR LIGHT-EMITTING ELEMENT
First Claim
1. A semiconductor light-emitting element comprising:
- a first semiconductor layer of a first conductivity type;
a light-emitting functional layer that is formed on the first semiconductor layer and includes a light-emitting layer; and
a second semiconductor layer that is formed on the light-emitting functional layer and is of a conductivity type opposite to a conductivity type of the first semiconductor layer, whereinthe light-emitting layer includes;
a base layer which has a composition subject to stress strain from the first semiconductor layer and has a plurality of base segments that are partitioned in a random net shape; and
a quantum well structure layer formed on the base layer and composed of at least one quantum well layer and at least one barrier layer, andthe base layer has a composition of AlxGa1-xN (0≦
x≦
1), the at least one barrier layer has a composition of AlyGa1-yN (0≦
y<
1), and the composition x and the composition y satisfy a relation of x>
y.
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Accused Products
Abstract
A semiconductor light-emitting element includes a first semiconductor layer of a first conductivity type; a light-emitting functional layer that includes a light-emitting layer; and a second semiconductor layer that is formed on the light-emitting functional layer and is of a conductivity type opposite to a conductivity type of the first semiconductor layer. The light-emitting layer includes a base layer which has a composition subject to stress strain from the first semiconductor layer and has a plurality of base segments that are partitioned in a random net shape; and a quantum well structure layer composed of at least one quantum well layer and at least one barrier layer. The base layer has a composition of AlxGa1-xN (0≦x≦1), and the barrier layer has a composition of AlyGa1-yN (0≦y<1), and the composition x and the composition y satisfy a relation of x>y.
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Citations
6 Claims
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1. A semiconductor light-emitting element comprising:
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a first semiconductor layer of a first conductivity type; a light-emitting functional layer that is formed on the first semiconductor layer and includes a light-emitting layer; and a second semiconductor layer that is formed on the light-emitting functional layer and is of a conductivity type opposite to a conductivity type of the first semiconductor layer, wherein the light-emitting layer includes;
a base layer which has a composition subject to stress strain from the first semiconductor layer and has a plurality of base segments that are partitioned in a random net shape; and
a quantum well structure layer formed on the base layer and composed of at least one quantum well layer and at least one barrier layer, andthe base layer has a composition of AlxGa1-xN (0≦
x≦
1), the at least one barrier layer has a composition of AlyGa1-yN (0≦
y<
1), and the composition x and the composition y satisfy a relation of x>
y. - View Dependent Claims (2, 3, 4, 5, 6)
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Specification