COPPER ALLOY FOR ELECTRONIC/ELECTRICAL DEVICE, COPPER ALLOY PLASTICALLY-WORKED MATERIAL FOR ELECTRONIC/ELECTRICAL DEVICE, COMPONENT FOR ELECTRONIC/ELECTRICAL DEVICE, TERMINAL, AND BUSBAR

• US 20180040389A1
• Filed: 09/08/2016
• Published: 02/08/2018
• Est. Priority Date: 09/09/2015
• Status: Active Grant

• Current Assignee: Mitsubishi Materials Corporation
• Original Assignee: Mitsubishi Materials Corporation
• Inventors: MATSUNAGA, Hirotaka, MAKI, Kazunari
• Granted Patent: US 10,453,582 B2
• Time in Patent Office: Days
• CPC Class Codes: C22C 9/00 Alloys based on copper
• CPC Class Codes: C22F 1/00 Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working apparatus for mechanical working of metal B21, B23, B24
• CPC Class Codes: C22F 1/08 of copper or alloys based thereon
• CPC Class Codes: H01B 1/02 mainly consisting of metals or alloys
• CPC Class Codes: H01B 1/026 Alloys based on copper
• CPC Class Codes: H01B 5/02 Single bars, rods, wires, or strips
• CPC Class Codes: H02G 5/00 Installations of bus-bars

Abstract

A copper alloy for and electric and an electronic device is provided. The copper alloy includes: Mg in a range of 0.15 mass % or more and less than 0.35 mass %; Pin a range of 0.0005 mass % or more and less than 0.01 mass %; and a Cu balance including inevitable impurities. In the copper alloy, a Mg content [Mg] and a P content [P], both of which are in a mass ratio, satisfy a relationship expressed by [Mg]+20×[P]<0.5, and an electrical conductivity of the copper alloy is more than 75% IACS.

Claims

1. A copper alloy for an electronic and electric device comprising:

Mg in a range of 0.15 mass % or more and less than 0.35 mass %;

P in a range of 0.0005 mass % or more and less than 0.01 mass %; and

a Cu balance including inevitable impurities, wherein

a Mg content [Mg] and a P content [P], both of which are in a mass ratio, satisfy a relationship expressed by [Mg]+20×

[P]<

0.5, and

an electrical conductivity of the copper alloy is more than 75% IACS.

2. The copper alloy for an electronic and electric device according to claim 1, wherein

the Mg content [Mg] and the P content [P], both of which are in a mass ratio, satisfy a relationship expressed by [Mg]/[P]≦

400.

3. The copper alloy for an electronic and electric device according to claim 1, wherein

a 0.2% yield strength is 300 MPa or more when a tensile test is carried out in a direction orthogonal to a rolling direction.

4. The copper alloy for an electronic and electric device according to claim 1, wherein a residual stress ratio is 50% or more at 150°

C. for 1000 hours.

5. A plastically-worked copper alloy material for an electronic and electric device made of the copper alloy for an electronic and electric device according to claim 1.

6. The plastically-worked copper alloy material for an electronic and electric device according to claim 5, wherein a Sn plating layer or a Ag plating layer is provided on a surface of the plastically-worked copper alloy material.

7. A component for an electronic and electric device made of the plastically-worked copper alloy material for an electronic and electric device according to claim 5.

8. A terminal made of the plastically-worked copper alloy material for an electronic and electric device according to claim 5.

9. A busbar made of the plastically-worked copper alloy material for an electronic and electric device according to claim 5.