Semiconductor element

• US 20180040412A1
• Filed: 07/13/2017
• Published: 02/08/2018
• Est. Priority Date: 08/05/2016
• Status: Active Grant

• Current Assignee: Realtek Semiconductor Corp.
• Original Assignee: Realtek Semiconductor Corp.
• Inventors: YEN, HSIAO-TSUNG, LUO, CHENG-WEI, JEAN, YUH-SHENG, YEH, TA-HSUN
• Granted Patent: US 10,593,464 B2
• Time in Patent Office: Days
• CPC Class Codes: H01F 17/0006 Printed inductances printed coils for dynamo-electric machines H02K3/26; printed circuits H05K
• CPC Class Codes: H01F 19/04 Transformers or mutual inductances suitable for handling frequencies considerably beyond the audio range resonant circuits H03H
• CPC Class Codes: H01F 2017/0046 with a conductive path having a bridge
• CPC Class Codes: H01F 2017/0073 with a special conductive pattern, e.g. flat spiral
• CPC Class Codes: H01F 2017/0086 on semiconductor substrate inductors for integrated circuits H01L28/10
• CPC Class Codes: H01F 2027/2809 on stacked layers
• CPC Class Codes: H01F 27/2804 Printed windings
• CPC Class Codes: H01F 27/29 Terminals; Tapping arrangements for signal inductances
• CPC Class Codes: H01L 23/5227 Inductive arrangements or effects of, or between, wiring layers other inductive arrangements H01L23/645
• CPC Class Codes: H01L 28/10 Inductors

Abstract

A semiconductor element includes a first coil substantially located at a first plane; a second coil substantially located at the first plane; a connecting section that connects the first coil and the second coil; a third coil substantially located at a second plane different from the first plane; and a fourth coil substantially located at the second plane. The third coil and the first coil are connected through a through structure, and the fourth coil and the second coil are connected through a through structure. The third coil and the fourth are not directly connected.

Claims

1. A semiconductor element, comprising:

a first spiral coil formed with a first end and a second end;

a second spiral coil, wherein said second spiral coil and said first spiral coil are located in substantially a same metal layer;

a connecting section, connecting said first spiral coil and said second spiral coil; and

a guide segment section, with one end connected to said first end and said second end;

wherein, a region surrounded by said second spiral coil and at least one of said guide segment section and said connecting section partially overlap.

2. The semiconductor element of claim 1, wherein said first spiral coil comprises:

an outer turn; and

an inner turn, located in a region surrounded by said outer turn;

wherein, said guide segment section and a region surrounded by said second spiral coil partially overlap, and said first end and said second end are located at said inner turn.

3. The semiconductor element of claim 2, wherein said guide segment section further partially overlaps a region surrounded by said first spiral coil.

4. The semiconductor element of claim 1, wherein

said first spiral coil comprises:

a first outer turn; and

a first inner turn, located in a region surrounded by said first outer turn; and

said second spiral coil comprises;

a second outer turn; and

a second inner turn, located in a region surrounded by said second outer turn;

wherein, said connecting section and a region surrounded by said second spiral coil partially overlap, and said connecting section connects said first outer turn and said second outer turn.

5. The semiconductor element of claim 4, wherein said guide segment section further partially overlaps a region surrounded by said first spiral coil.

6. The semiconductor element of claim 4, wherein said guide segment section and a region surrounded by said first inner turn do not overlap.

7. The semiconductor element of claim 1, wherein

said first spiral coil comprises:

a first outer turn; and

a first inner turn, located in a region surrounded by said first outer turn; and

said second spiral coil comprises;

a second outer turn; and

a second inner turn, located in a region surrounded by said second outer turn;

wherein, said connecting section and a region surrounded by said second spiral coil partially overlap, and said connecting section connects said first inner turn and said second inner turn.

8. The semiconductor element of claim 7, wherein said guide segment section further partially overlaps a region surrounded by said first spiral coil.

9. The semiconductor element of claim 7, wherein said guide segment section and a region surrounded by said first inner turn do not overlap.

10. The semiconductor element of claim 7, wherein said first end and said second end are located at said first outer turn.

11. The semiconductor element of claim 1 further comprising:

a center tap, connected to one of said first spiral coil and said second spiral coil;

wherein, said semiconductor element is an integrated inductor that comprises;

a first sensing unit, using said first end and said center tap as two ends thereof; and

a second sensing unit, using said second end and said center tap as two ends thereof.

12. The semiconductor element of claim 1 further comprising:

a third end, located at one of said first spiral coil and said second spiral coil; and

a fourth end, located at said first spiral coil or said second spiral coil where said third end is located;

wherein, said semiconductor element is an integrated transformer that uses said first end and said second end as one of an input port and an output port of said integrated transformer, and uses said third end and said fourth end as the other of said input port and said output port.

13. A semiconductor element, comprising:

a first coil, substantially located at a first plane;

a second coil, substantially located at said first plane;

a connecting section, connecting said first coil and said second coil;

a third coil, substantially located at a second plane different from said first plane; and

a fourth coil, substantially located at said second plane;

wherein, said third coil and said first coil are connected through a through structure, said fourth coil and said second coil are connected through a through structure, and said third coil and said fourth coil are not directly connected.

14. The semiconductor element of claim 13, wherein metal segments of said third coil substantially overlap metal segments of said first coil, and metal segments of said fourth coil substantially overlap metal segments of said second coil.

15. The semiconductor element of claim 13 further comprising:

a guide segment section, connected to said third coil and comprising a first guide segment and a second guide segment;

wherein said guide segment section partially overlaps regions surrounded by said first coil and said third coil.

16. The semiconductor element of claim 13 further comprising:

a center tap, connected to said fourth coil;

wherein said center tap partially overlaps regions surrounded by said second coil and said fourth coil.

17. The semiconductor element of claim 13 further comprising:

a first end, located at said third coil;

a second end, located at said third coil; and

a center tap, connected to said fourth coil;

wherein, said semiconductor element is an integrated inductor that comprises;

a first sensing unit, using said first end and said center tap as two ends thereof; and

a second sensing unit, using said second end and said center tap as two ends thereof.

18. The semiconductor element of claim 13 further comprising:

a first end, located at said third coil;

a second end, located at said third coil;

a third end, located at said fourth coil; and

a fourth end, located at said fourth coil;

wherein, said semiconductor element is an integrated transformer that uses said first end and said second end as one of an input port and an output port of said integrated transformer, and uses said third end and said fourth end as the other of said input port and said output port.