SEMICONDUCTOR DEVICE INCLUDING RESONANT TUNNELING DIODE STRUCTURE HAVING A SUPERLATTICE
First Claim
1. A semiconductor device comprising:
- at least one double-barrier resonant tunneling diode (DBRTD) comprising;
a first doped semiconductor layer;
a first barrier layer on the first doped semiconductor layer and comprising a superlattice, the superlattice comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions;
an intrinsic semiconductor layer on the first barrier layer;
a second barrier layer on the intrinsic semiconductor layer; and
a second doped semiconductor layer on the second superlattice layer.
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Accused Products
Abstract
A semiconductor device may include at least one double-barrier resonant tunneling diode (DBRTD). The at least one DBRTD may include a first doped semiconductor layer and a first barrier layer on the first doped semiconductor layer and including a superlattice. The superlattice may include stacked groups of layers, each group of layers including a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The at least one DBRTD may further include an intrinsic semiconductor layer on the first barrier layer, a second barrier layer on the intrinsic semiconductor layer, and a second doped semiconductor layer on the second superlattice layer.
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Citations
22 Claims
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1. A semiconductor device comprising:
at least one double-barrier resonant tunneling diode (DBRTD) comprising; a first doped semiconductor layer; a first barrier layer on the first doped semiconductor layer and comprising a superlattice, the superlattice comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions; an intrinsic semiconductor layer on the first barrier layer; a second barrier layer on the intrinsic semiconductor layer; and a second doped semiconductor layer on the second superlattice layer. - View Dependent Claims (2, 9)
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3. The semiconductor device of 1 wherein the second barrier layer also comprises a superlattice.
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4. The semiconductor device of 3 wherein the second doped semiconductor layer comprises a single crystal semiconductor layer.
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5. The semiconductor device of 1 wherein the second barrier layer comprises an oxide layer.
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6. The semiconductor device of 5 wherein the second doped semiconductor layer comprises a polycrystalline semiconductor layer.
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7. The semiconductor device of 1 wherein the first and second doped semiconductor layers have a same dopant conductivity type.
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8. The semiconductor device of 1 wherein the first and second doped semiconductor layers have opposite dopant conductivity types.
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10. The semiconductor device of 1 wherein the at least one non-semiconductor monolayer comprises oxygen, and wherein each semiconductor monolayer comprises silicon.
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11. A semiconductor device comprising:
at least one double-barrier resonant tunneling diode (DBRTD) comprising a first doped semiconductor layer; a first barrier layer on the first doped semiconductor layer and comprising a superlattice, the superlattice comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base silicon monolayers defining a base silicon portion, and at least one oxygen monolayer constrained within a crystal lattice of adjacent base silicon portions; an intrinsic semiconductor layer on the first barrier layer; a second barrier layer on the intrinsic semiconductor layer and also comprising the superlattice; and a second doped semiconductor layer on the second superlattice layer. - View Dependent Claims (12, 13, 14, 15, 16)
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17. A semiconductor device comprising
at least one double-barrier resonant tunneling diode (DBRTD) comprising a first doped semiconductor layer; -
a first barrier layer on the first doped semiconductor layer and comprising a superlattice, the superlattice comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base silicon monolayers defining a base silicon portion, and at least one oxygen monolayer constrained within a crystal lattice of adjacent base silicon portions; an intrinsic semiconductor layer on the first barrier layer; a second barrier layer on the intrinsic semiconductor layer comprising an oxide layer; and a second doped semiconductor layer on the second superlattice layer. - View Dependent Claims (18, 19, 20, 21, 22)
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Specification