SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME

• US 20180040779A1
• Filed: 12/30/2015
• Published: 02/08/2018
• Est. Priority Date: 12/30/2014
• Status: Active Grant

• Current Assignee: Lumens Co., Ltd.
• Original Assignee: Semicon Light Co., Ltd.
• Inventors: BAEK, Seung Ho, JEON, Soo Kun
• Granted Patent: US 10,468,558 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 21/568 Temporary substrate used as encapsulation process aid H01L21/4832 and H01L21/566 take precedence
• CPC Class Codes: H01L 2224/04105 Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
• CPC Class Codes: H01L 2224/19 Manufacturing methods of high density interconnect preforms
• CPC Class Codes: H01L 23/552 Protection against radiation, e.g. light or electromagnetic waves
• CPC Class Codes: H01L 2924/1815 Shape
• CPC Class Codes: H01L 2933/0033 relating to semiconductor body packages
• CPC Class Codes: H01L 2933/0041 relating to wavelength conversion elements
• CPC Class Codes: H01L 2933/005 relating to encapsulations
• CPC Class Codes: H01L 2933/0058 relating to optical field-shaping elements
• CPC Class Codes: H01L 2933/0066 relating to arrangements for conducting electric current to or from the semiconductor body
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/486 adapted for surface mounting
• CPC Class Codes: H01L 33/502 Wavelength conversion materials
• CPC Class Codes: H01L 33/505 characterised by the shape, e.g. plate or foil
• CPC Class Codes: H01L 33/54 having a particular shape
• CPC Class Codes: H01L 33/60 Reflective elements
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

The present disclosure relates to a semiconductor light emitting device and a method for manufacturing the same, in which the semiconductor light emitting device includes a semiconductor light emitting chip having a semiconductor light emitting part for generating light by electron-hole recombination, and at least one electrode electrically connected to the semiconductor light emitting part; a wall placed on a lateral side of the semiconductor light emitting part, with the wall having an elevated upper end caused by surface tension effects; and an encapsulant arranged in a bowl that is defined by the upper end of the wall and the semiconductor light emitting part, with the encapsulant for transmitting therethrough a light from the semiconductor light emitting part.

Claims

1. A semiconductor light emitting device, comprising:

a semiconductor light emitting chip having a semiconductor light emitting part for generating light by electron-hole recombination, and at least one electrode electrically connected to the semiconductor light emitting part;

a wall placed on a lateral side of the semiconductor light emitting part, with the wall having an elevated upper end caused by surface tension effects; and

an encapsulant arranged in a bowl that is defined by the upper end of the wall and the semiconductor light emitting part, with the encapsulant for transmitting therethrough a light from the semiconductor light emitting part.

2. The semiconductor light emitting device according to claim 1, wherein the upper end of the wall has an outer edge higher than the lateral side of the semiconductor light emitting part.

3. The semiconductor light emitting device according to claim 1, wherein the upper end of the wall is curved concave inward towards a lower end of the wall.

4. The semiconductor light emitting device according to claim 1, wherein the wall is a reflector.

5. The semiconductor light emitting device according to claim 1, comprising a phosphor contained in the encapsulant.

6. The semiconductor light emitting device according to claim 2, wherein the wall has an outer lateral side inclined in such a manner that the outer lateral side is farther from the semiconductor light emitting part at the upper end of the wall than at the lower end of the wall.

7. The semiconductor light emitting device according to claim 1, further comprising:

a dam which is placed on the opposite of the semiconductor light emitting chip with respect to the wall and has an inclined side in contact with the wall,

wherein the upper end of the wall arises along the inclined side of the dam caused by surface tension effects.

8. The semiconductor light emitting device according to claim 1, wherein the semiconductor light emitting part comprises:

a plurality of semiconductor layers composed of a first semiconductor layer having a first conductivity type, a second semiconductor layer having a second conductivity type different from the first conductivity type, and an active layer interpositioned between the first semiconductor layer and the second semiconductor layer, for generating light by electron-hole recombination; and

a substrate disposed between the plurality of semiconductor layers formed thereon and an encapsulant,

wherein the at least one electrode comprises a first electrode being disposed on the substrate opposite to the plurality of semiconductor layers and supplying electrons or holes to the first semiconductor layer; and

a second electrode being disposed on the substrate opposite to the plurality of semiconductor layers and supplying electrons or holes, whichever are not supplied to the first semiconductor layer, to the second semiconductor layer.

9. The semiconductor light emitting device according to claim 8, further comprising:

a first conductive part formed on the lower end of the wall to come in contact with the first electrode; and

a second conductive part formed on the lower end of the wall, with the second conductive part being positioned a distance away from the first conductive part.

10. The semiconductor light emitting device according to claim 1, wherein the device comprises a plurality of semiconductor light emitting chips, the wall is adapted to surround lateral sides of the plurality of semiconductor light emitting chip, and the encapsulant covers exposed portions of the plurality of semiconductor light emitting chips from the wall.

11. The semiconductor light emitting device according to claim 8, further comprising:

a flip chip-type functional element having two electrical terminals, with the two electrical terminals being at least partially surrounded with the wall to be exposed towards the first electrode and the second electrode.

12. A method for manufacturing a semiconductor light emitting device, the method comprising:

placing a dam having an opening formed therein onto a base, and placing a semiconductor light emitting chip onto an exposed portion of the base through the opening, with the semiconductor light emitting chip having a semiconductor light emitting part for generating light by electron-hole recombination and at least one electrode electrically connected to the semiconductor light emitting part;

forming a wall between a lateral side of the dam and a lateral side of the semiconductor light emitting part, with the wall having an elevated upper end caused by surface tension effects; and

forming an encapsulant in a bowl that is defined by the upper end of the wall and the semiconductor light emitting part.

13. The method according to claim 12, wherein in step of forming a wall, the lateral side of the dam is inclined with respect to the base, and the upper end of the wall is formed as a light reflective material fed between the lateral side of the dam and the lateral side of the semiconductor light emitting part arises along the lateral side of the dam due to surface tension effects.

14. The method according to claim 12, wherein the upper end of the wall is formed such that, relative to the base, the lateral side of the dam is higher than the lateral side of the semiconductor light emitting part.

15. The method according to claim 12, wherein the semiconductor light emitting chip is a flip chip, and the at least one electrode comprises a first electrode and a second electrode disposed on an opposite side of the encapsulant with respect to the semiconductor light emitting part, and

the method further comprises:

after forming the encapsulant, separating the base from the dam and the wall; and

forming a first conductive part on the lower end of the wall to come in contact with the first electrode, and a second conductive part on the lower end of the wall to come in contact with the second electrode, respectively.

16. The method according to claim 15, wherein in step of placing a dam and a semiconductor light emitting chip on the base, a plurality of semiconductor light emitting chips is placed in a single opening, and the wall is filled in a space between lateral sides of the semiconductor light emitting chips.

17. The method according to claim 15, wherein in step of placing a dam and a semiconductor light emitting chip on the base, a flip chip-type functional element having two electrical terminals exposed to the first and second electrodes is placed together with the semiconductor light emitting chip in the opening, and in step of forming a wall, at least a portion of the functional element is covered with the wall.

18. The method according to claim 12, further comprising:

separating all parts from the dam.

19. The method according to claim 12, further comprising:

cutting the dam to obtain an assembly having the cut dam and the other parts.

20. The method according to claim 12, wherein in step of placing a dam and a semiconductor light emitting chip on a base comprises the processes of:

placing a dam having an opening formed therein onto the base; and

placing a semiconductor light emitting chip on an exposed portion of the base through the opening, using a device carrier which recognizes a shape of the dam and calibrates a position for a semiconductor light emitting chip to be seated.