SEMICONDUCTOR DEVICE
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Abstract
A nitride insulating film which prevents diffusion of hydrogen into an oxide semiconductor film in a transistor including an oxide semiconductor is provided. Further, a semiconductor device which has favorable electrical characteristics by using a transistor including a silicon semiconductor and a transistor including an oxide semiconductor is provided. Two nitride insulating films having different functions are provided between the transistor including a silicon semiconductor and the transistor including an oxide semiconductor. Specifically, a first nitride insulating film which contains hydrogen is provided over the transistor including a silicon semiconductor, and a second nitride insulating film which has a lower hydrogen content than the first nitride insulating film and functions as a barrier film against hydrogen is provided between the first nitride insulating film and the transistor including an oxide semiconductor.
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Citations
20 Claims
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1. (canceled)
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2. A semiconductor device comprising:
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a first transistor comprising a silicon semiconductor layer including a first channel formation region; an insulating layer comprising a first nitride insulating layer and a second nitride insulating layer over the first transistor; a second transistor comprising an oxide semiconductor layer including a second channel formation region over the insulating layer; and a third nitride insulating layer over the second transistor, wherein the second nitride insulating layer is between the first nitride insulating layer and the oxide semiconductor layer, wherein a density of the second nitride insulating layer is higher than or equal to 2.75 g/cm3, and wherein a density of the third nitride insulating layer is higher than or equal to 2.75 g/cm3. - View Dependent Claims (3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A semiconductor device comprising:
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a first transistor comprising a silicon semiconductor layer including a first channel formation region; an insulating layer over the first transistor, the insulating layer comprising a first nitride insulating layer, and a second nitride insulating layer over the first nitride insulating layer; a second transistor over the insulating layer, the second transistor comprising a first electrode, a second electrode, and an oxide semiconductor layer including a second channel formation region; and a third nitride insulating layer over the second transistor, wherein each of the first electrode and the second electrode overlaps with the second channel formation region, wherein the first electrode is in contact with the second nitride insulating layer, wherein a density of the second nitride insulating layer is higher than or equal to 2.75 g/cm3, and wherein a density of the third nitride insulating layer is higher than or equal to 2.75 g/cm3. - View Dependent Claims (13, 14, 15, 16)
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17. A semiconductor device comprising:
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a first transistor comprising a silicon semiconductor layer including a first channel formation region; an insulating layer over the first transistor, the insulating layer comprising a first nitride insulating layer, and a second nitride insulating layer over and in contact with the first nitride insulating layer; a second transistor over the insulating layer, the second transistor comprising a first electrode, a second electrode, and an oxide semiconductor layer including a second channel formation region; and a third nitride insulating layer over the second transistor, wherein each of the first electrode and the second electrode overlaps with the second channel formation region, wherein the first electrode is in contact with the first nitride insulating layer, wherein a density of the second nitride insulating layer is higher than or equal to 2.75 g/cm3, and wherein a density of the third nitride insulating layer is higher than or equal to 2.75 g/cm3. - View Dependent Claims (18, 19, 20)
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Specification