BACKPLANE FOR DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME

• US 20180053788A1
• Filed: 08/11/2017
• Published: 02/22/2018
• Est. Priority Date: 08/16/2016
• Status: Abandoned Application

• Current Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Original Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Inventors: LEE, Bong-Won, PARK, Jong-Hee, KIM, Jin-Seock, KANG, Seung-Bae
• Application Number:
  US15/674,647
• Publication Number:
  US 20180053788A1
• Time in Patent Office: Days
• CPC Class Codes: G02F 1/133345 Insulating layers G02F1/1335, G02F1/1337, G02F1/135, G02F1/136 take precedence
• CPC Class Codes: G02F 1/134309 characterised by their geometrical arrangement
• CPC Class Codes: G02F 1/13439 characterised by their electrical, optical, physical properties; materials therefor; method of making
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: G02F 2201/121 common or background
• CPC Class Codes: G02F 2201/123 pixel
• CPC Class Codes: H01L 21/32134 by liquid etching only
• CPC Class Codes: H01L 21/32135 by vapour etching only
• CPC Class Codes: H01L 21/32138 pre- or post-treatments, e.g. anti-corrosion processes
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1248 with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
• CPC Class Codes: H01L 27/1259 Multistep manufacturing methods
• CPC Class Codes: H10K 50/813 characterised by their shape
• CPC Class Codes: H10K 50/816 Multilayers, e.g. transparent multilayers
• CPC Class Codes: H10K 50/818 Reflective anodes, e.g. ITO combined with thick metallic layers
• CPC Class Codes: H10K 59/1201 Manufacture or treatment
• CPC Class Codes: H10K 59/123 Connection of the pixel electrodes to the thin film transistors [TFT]

Abstract

A backplane for a display device having a light emitting portion and a pad portion and a method of manufacturing the backplane for a display device, the backplane including a drain electrode in the light emitting portion on a substrate; a pad electrode in the pad portion on the substrate; a passivation layer in the light emitting portion to partially cover the drain electrode, the passivation layer exposing a portion of the drain electrode; a first pixel electrode in the light emitting portion on the passivation layer and the exposed drain electrode; and a second pixel electrode on the first pixel electrode, wherein: the second pixel electrode is formed of a material that is etchable by a first etching material, and the first pixel electrode is formed of a material that is not etchable by the first etching material.

Claims

1. A backplane for a display device having a light emitting portion and a pad portion, the backplane comprising:

a drain electrode in the light emitting portion on a substrate;

a pad electrode in the pad portion on the substrate;

a passivation layer in the light emitting portion to partially cover the drain electrode, the passivation layer exposing a portion of the drain electrode;

a first pixel electrode in the light emitting portion on the passivation layer and the exposed drain electrode; and

a second pixel electrode on the first pixel electrode,

wherein;

the second pixel electrode is formed of a material that is etchable by a first etching material, and

the first pixel electrode is formed of a material that is not etchable by the first etching material.

2. The backplane as claimed in claim 1, wherein:

the material of the first pixel electrode is etchable by a second etching material, and

the material of the second pixel electrode is not etchable by the second etching material.

3. The backplane as claimed in claim 1, wherein the second pixel electrode has a shape that conforms to a shape of the first pixel electrode.

4. The backplane as claimed in claim 1, wherein the pad electrode and the second pixel electrode include materials that are susceptible to undergoing a galvanic reaction in cooperation with an electrolyte.

5. The backplane as claimed in claim 1, wherein:

the pad electrode includes a first layer, a second layer, and a third layer which are sequentially stacked, and

the second layer of the pad electrode and the second pixel electrode include materials that are susceptible to undergoing a galvanic reaction in cooperation with an electrolyte.

6. The backplane as claimed in claim 5, wherein the first pixel electrode and the third layer of the pad electrode include a same material.

7. The backplane as claimed in claim 1, wherein:

the second pixel electrode includes a first layer, a second layer, and a third layer which are sequentially stacked, and

the first layer and the third layer protect a bottom surface and a top surface of the second layer, respectively.

8. The backplane as claimed in claim 1, wherein:

the second pixel electrode includes a first layer and a second layer which are sequentially stacked, and

the first pixel electrode and the second layer protect a bottom surface and a top surface of the first layer, respectively.

9. The backplane as claimed in claim 1, wherein the drain electrode and the pad electrode are disposed at a same level on the substrate.

10. A method of manufacturing a backplane for a display device having a light emitting portion and a pad portion, the method comprising:

forming a drain electrode on a substrate in the light emitting portion;

forming a pad electrode on the substrate in the pad portion;

forming a passivation layer in the light emitting portion to partially cover the drain electrode, the passivation layer exposing a portion of the drain electrode;

forming a first pixel electrode layer on the passivation layer, the exposed drain electrode, and the pad electrode;

forming a second pixel electrode layer on the first pixel electrode layer;

etching the second pixel electrode layer with a first etching material to form a second pixel electrode; and

etching the first pixel electrode layer with a second etching material to form a first pixel electrode,

wherein the first pixel electrode layer is not etched by the first etching material during the etching of the second pixel electrode layer.

11. The method as claimed in claim 10, wherein etching the second pixel electrode layer includes performing a wet-etching method.

12. The method as claimed in claim 10, wherein the second pixel electrode layer is not etched by the second etching material during the etching of the first pixel electrode layer.

13. The method as claimed in claim 12, wherein etching the first pixel electrode layer includes performing a dry-etching method.

14. The method as claimed in claim 10, wherein the pad electrode and the second pixel electrode layer include materials that are susceptible to undergoing a galvanic reaction in cooperation with an electrolyte.

15. The method as claimed in claim 14, wherein the first pixel electrode layer covers a top surface and a sidewall of the pad electrode.

16. The method as claimed in claim 10, wherein:

the pad electrode includes a first layer, a second layer, and a third layer which are sequentially stacked, and

the second layer of the pad electrode and the second pixel electrode layer include materials that are susceptible to undergoing a galvanic reaction in cooperation with an electrolyte.

17. The method as claimed in claim 16, wherein the first pixel electrode layer covers a sidewall of the pad electrode.

18. The method as claimed in claim 16, wherein the first pixel electrode layer and the third layer of the pad electrode include a same material.

19. The method as claimed in claim 10, wherein the drain electrode and the pad electrode are simultaneously formed.

20. The method as claimed in claim 10, further comprising:

forming a photoresist pattern corresponding to the second pixel electrode on the second pixel electrode layer prior to etching the second pixel electrode layer; and

removing the photoresist pattern after etching the first pixel electrode layer.