MODEL BASED OPTICAL MEASUREMENTS OF SEMICONDUCTOR STRUCTURES WITH ANISOTROPIC DIELECTRIC PERMITTIVITY

• US 20180059019A1
• Filed: 07/14/2017
• Published: 03/01/2018
• Est. Priority Date: 08/31/2016
• Status: Active Grant

• Current Assignee: KLA-Tencor Corporation (KLA Corporation)
• Original Assignee: KLA-Tencor Corporation (KLA Corporation)
• Inventors: Chouaib, Houssam, Zhao, Qiang, Shchegrov, Andrei V., Tan, Zhengquan
• Granted Patent: US 10,458,912 B2
• Time in Patent Office: Days
• CPC Class Codes: G01B 11/24 for measuring contours or curvatures
• CPC Class Codes: G01B 11/30 for measuring roughness or irregularity of surfaces
• CPC Class Codes: G01B 11/303 using photoelectric detection means
• CPC Class Codes: G01B 2210/56 Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
• CPC Class Codes: G01N 2021/8883 involving the calculation of gauges, generating models
• CPC Class Codes: G01N 21/211 Ellipsometry optical thickness measurement G01B11/06
• CPC Class Codes: G01N 21/4788 Diffraction for sizing particles G01N15/0205
• CPC Class Codes: G01N 21/9501 Semiconductor wafers manufacturing processes per se of semiconductor devices implementing a measuring step H01L22/10
• CPC Class Codes: G01N 21/9515 Objects of complex shape, e.g. examined with use of a surface follower device measuring contours and curvatures G01B11/24
• CPC Class Codes: G01N 21/956 Inspecting patterns on the surface of objects contactless testing of electronic circuits G01R31/308; testing currency G07D; manufacturing processes per se of semiconductor devices implementing a measuring step H01L22/10
• CPC Class Codes: G03F 7/70616 Monitoring the printed patterns
• CPC Class Codes: G03F 7/70625 Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness

Abstract

Methods and systems for performing optical, model based measurements of a small sized semiconductor structure employing an anisotropic characterization of the optical dispersion properties of one or more materials comprising the structure under measurement are presented herein. This reduces correlations among geometric parameters and results in improved measurement sensitivity, improved measurement accuracy, and enhanced measurement contrast among multiple materials under measurement. In a further aspect, an element of a multidimensional tensor describing the dielectric permittivity of the materials comprising the structure is modelled differently from another element. In a further aspect, model based measurements are performed based on measurement data collected from two or more measurement subsystems combined with an anisotropic characterization of the optical dispersion of the materials under measurement. In another aspect, the characterization of the optical dispersion of one or more materials comprising the structure under measurement depends on the geometry of the structure.

Claims

1. A measurement system comprising:

a first illuminator providing a first amount of illumination to a structure fabricated on an unfinished, multi-layer semiconductor wafer across a spectral range;

a first spectrometer collecting a first amount of light from the structure under measurement in response to the first amount of illumination and generating a first amount of spectral data indicative of a spectral response of the structure under measurement, wherein the first illuminator and the first spectrometer are configured in accordance with a first set of measurement system parameters; and

a fitting analysis module configured to estimate a value of one or more geometric parameters of interest associated the structure under measurement based on a measurement model including an anisotropic characterization of an optical dispersion of the structure under measurement.

2. The measurement system of claim 1, wherein the structure under measurement includes two or more geometric features each fabricated from a different material, and wherein the measurement model includes a different anisotropic characterization of the optical dispersion associated with each different material.

3. The measurement system of claim 1, wherein the estimating of the value of the one or more geometric parameters of interest involves a regression of the first amount of spectral data with the measurement model.

4. The measurement system of claim 1, wherein the first illuminator and the first spectrometer are configured as a spectroscopic ellipsometer or a spectroscopic reflectometer.

5. The measurement system of claim 1, wherein the anisotropic characterization of the optical dispersion of the structure under measurement includes a matrix function of the optical dispersion.

6. The measurement system of claim 5, wherein each of the off-diagonal elements of the matrix function are zero valued, and two or more of the diagonal elements of the matrix function are different values.

7. The measurement system of claim 1, wherein the anisotropic characterization of the optical dispersion includes one or more optical dispersion parameters associated with each of three principle directions, and wherein the one or more optical dispersion parameter values associated with at least one of the three principle directions is different from the one or more optical dispersion parameter values associated with the other of the three principle directions.

8. The measurement system of claim 1, further comprising:

a second illuminator providing a second amount of illumination to the structure under measurement; and

a second spectrometer collecting a second amount of light from the structure under measurement in response to the second amount of illumination and generating a second amount of spectral data indicative of a spectral response of the structure under measurement, wherein the second illuminator and the second spectrometer are configured in accordance with a second set of measurement system parameters.

9. The measurement system of claim 8, wherein the first and second illuminators are the same illuminator and the first and second spectrometers are the same spectrometer.

10. The measurement system of claim 8, wherein the first set of measurement system parameters includes an azimuth angle, an angle of incidence, an illumination light polarization, an optical electric field orientation, or any combination thereof, and wherein the second set of measurement system parameters includes a different value of any of the azimuth angle, the angle of incidence, the illumination light polarization, and the optical electric field orientation.

11. The measurement system of claim 8, wherein the estimating of the value of the one or more geometric parameters of interest involves a regression of the first and second amounts of spectral data with the measurement model, wherein one or more optical dispersion parameters associated with a material of the structure under measurement are floated during the regressions of the first and second amounts of spectral data and the values of the one or more geometric parameters of interest are constrained to be the same value during the regressions of the first and second amounts of spectral data.

12. The measurement system of claim 11, wherein an initial value of the one or more optical dispersion parameters employed during the regression of the first and second amounts of spectral data is a bulk, isotropic value of the one more optical dispersion parameters.

13. The measurement system of claim 12, wherein the bulk, isotropic value of the one or more optical dispersion parameters is determined from a spectroscopic measurement of a film of the material.

14. The measurement system of claim 1, wherein the anisotropic characterization of the optical dispersion of the structure under measurement is a function of a geometric parameter of the structure under measurement.

15. The measurement system of claim 14, wherein the geometric parameter is one of the geometric parameters of interest.

16. The measurement system of claim 14, wherein the anisotropic characterization of the optical dispersion includes a plurality of harmonic oscillator functions.

17. A method comprising:

providing a first amount of illumination to a structure fabricated on an unfinished, multi-layer semiconductor wafer across a spectral range;

collecting a first amount of light from the structure under measurement in response to the first amount of illumination;

generating a first amount of spectral data indicative of a spectral response of the structure under measurement; and

estimating a value of one or more geometric parameters of interest associated the structure under measurement based on a measurement model including an anisotropic characterization of an optical dispersion of the structure under measurement.

18. The method of claim 17, wherein the structure under measurement includes two or more geometric features each fabricated from a different material, and wherein the measurement model includes a different anisotropic characterization of the optical dispersion associated with each different material.

19. The method of claim 17, wherein the anisotropic characterization of the optical dispersion of the structure under measurement includes a matrix function of the optical dispersion.

20. The method of claim 17, wherein the anisotropic characterization of the optical dispersion includes one or more optical dispersion parameters associated with each of three principle directions, and wherein the one or more optical dispersion parameter values associated with at least one of the three principle directions is different from the one or more optical dispersion parameter values associated with the other of the three principle directions.

21. The method of claim 17, wherein the anisotropic characterization of the optical dispersion of the structure under measurement is a function of a geometric parameter of the structure under measurement.

22. The method of claim 21, wherein the geometric parameter is one of the geometric parameters of interest.

23. A measurement system comprising:

a first illuminator providing a first amount of illumination to a structure fabricated on an unfinished, multi-layer semiconductor wafer across a spectral range;

a first spectrometer collecting a first amount of light from the structure under measurement in response to the first amount of illumination and generating a first amount of spectral data indicative of a spectral response of the structure under measurement, wherein the first illuminator and the first spectrometer are configured in accordance with a first set of measurement system parameters; and

a non-transitory, computer readable medium storing instructions that, when executed by one or more processors, cause the one or more processors to;

estimate a value of one or more geometric parameters of interest associated the structure under measurement based on a measurement model including an anisotropic characterization of an optical dispersion of the structure under measurement.

24. The measurement system of claim 23, wherein the structure under measurement includes two or more geometric features each fabricated from a different material, and wherein the measurement model includes a different anisotropic characterization of the optical dispersion associated with each different material.

25. The measurement system of claim 23, wherein the anisotropic characterization of the optical dispersion of the structure under measurement includes a matrix function of the optical dispersion.

26. The measurement system of claim 23, wherein the anisotropic characterization of the optical dispersion includes one or more optical dispersion parameters associated with each of three principle directions, and wherein the one or more optical dispersion parameter values associated with at least one of the three principle directions is different from the one or more optical dispersion parameter values associated with the other of the three principle directions.

27. The measurement system of claim 23, wherein the anisotropic characterization of the optical dispersion of the structure under measurement is a function of a geometric parameter of the structure under measurement.