Non-Volatile Memory Devices Having Temperature and Location Dependent Word Line Operating Voltages
First Claim
1. A non-volatile memory device, comprising:
- a memory cell array including a memory cell string including a ground selection transistor and a plurality of serially connected non-volatile memory cells;
a ground selection line connected to the ground selection transistor and a plurality of word lines connected to the plurality of memory cells;
a voltage generator configured to generate a program verification voltage and a read voltage applied to the plurality of word lines; and
a control circuit configured to control a compensation for the program verification voltage based on a program verification temperature offset, and then control a compensation for the read voltage based on a read temperature offset,wherein the compensation for the program verification voltage and the compensation for the read voltage are performed in correspondence with each other in order to eliminate a deviation due to a difference between the read temperature offset and the program verification temperature offset,wherein the plurality of word lines is divided into a plurality of word line groups including two or more word lines, andthe control circuit sets a program verification temperature offset and a read temperature offset in a corresponding word line group among the plurality of word line groups according to a distance between one word line in each of the plurality of word line groups and the ground selection line and an operation temperature.
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Accused Products
Abstract
A non-volatile memory device includes: a memory cell array including a memory cell string including a ground selection transistor and a plurality of serially connected non-volatile memory cells; a ground selection line connected to the ground selection transistor and a plurality of word lines connected to the plurality of memory cells; a voltage generator configured to generate a program verification voltage and a read voltage applied to the plurality of word lines; and a control circuit configured to control a compensation for the program verification voltage based on a program verification temperature offset, and control a to compensation for the read voltage based on a read temperature offset.
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Citations
20 Claims
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1. A non-volatile memory device, comprising:
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a memory cell array including a memory cell string including a ground selection transistor and a plurality of serially connected non-volatile memory cells; a ground selection line connected to the ground selection transistor and a plurality of word lines connected to the plurality of memory cells; a voltage generator configured to generate a program verification voltage and a read voltage applied to the plurality of word lines; and a control circuit configured to control a compensation for the program verification voltage based on a program verification temperature offset, and then control a compensation for the read voltage based on a read temperature offset, wherein the compensation for the program verification voltage and the compensation for the read voltage are performed in correspondence with each other in order to eliminate a deviation due to a difference between the read temperature offset and the program verification temperature offset, wherein the plurality of word lines is divided into a plurality of word line groups including two or more word lines, and the control circuit sets a program verification temperature offset and a read temperature offset in a corresponding word line group among the plurality of word line groups according to a distance between one word line in each of the plurality of word line groups and the ground selection line and an operation temperature. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A non-volatile memory device having a 3D structure, comprising:
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a plurality of memory cell strings formed by laminating a plurality of memory cells in a vertical direction to a substrate; a plurality of word lines connected to a ground selection transistor of each of the plurality of memory cell strings, and a plurality of serially connected non-volatile memory cells; a voltage generator configured to generate a program verification voltage and a read voltage applied to the plurality of word lines; and a control circuit configured to control a compensation for the program verification voltage based on a program verification temperature offset, and then control a compensation for the read voltage based on a read temperature offset, wherein the compensation for the program verification voltage and the compensation for the read voltage are performed in correspondence with each other in order to eliminate a deviation due to a difference between the read temperature offset and the program verification temperature offset, wherein the plurality of word lines is divided into a plurality of word line groups including two or more word lines, and the control circuit sets a program verification temperature offset and a read temperature offset in a corresponding word line group among the plurality of word line groups according to a distance between one word line in each of the plurality of word line groups and the substrate and an operation temperature. - View Dependent Claims (9, 10, 11, 12, 13)
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14. A non-volatile memory device, comprising:
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a memory cell array including a plurality of word lines including first and second word lines; a voltage generator configured to generate a program verification voltage to be applied to the plurality of word lines during a program verification and a read voltage to be applied to the plurality of word lines during a data read; and a control circuit configured to generate a verification offset for compensating for the verification voltage based on a temperature during the program verification and a position of a word line, to which the verification voltage is to applied, and then generate a read offset for compensating for the read voltage based on a temperature during the data read and the position of a word line, to which the read voltage is to be applied, and control a change direction between the verification offset and the read offset, wherein the compensation for the program verification voltage and the compensation for the read voltage are performed in correspondence with each other in order to eliminate a deviation due to a difference between the read temperature offset and the program verification temperature offset, wherein the plurality of word lines is divided into a plurality of word line groups including word lines having the number based on an operation temperature, the control circuit sets a verification offset and a read offset in a corresponding word line group among the plurality of word line groups according to a position of one word line in each of the plurality of word line groups and an operation temperature, and each of the first word line and the second word line belongs to a different word line group. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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Specification