SEMICONDUCTOR VIA STRUCTURE WITH LOWER ELECTRICAL RESISTANCE

• US 20180061707A1
• Filed: 11/01/2017
• Published: 03/01/2018
• Est. Priority Date: 11/19/2015
• Status: Active Grant

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Clevenger, Lawrence A., Li, Baozhen, Peterson, Kirk D., Spooner, Terry A., Wang, Junli
• Granted Patent: US 10,460,990 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 21/76831 in via holes or trenches, e.g. non-conductive sidewall liners
• CPC Class Codes: H01L 21/76843 formed in openings in a dielectric
• CPC Class Codes: H01L 21/76844 Bottomless liners
• CPC Class Codes: H01L 21/76847 the layer being positioned within the main fill metal
• CPC Class Codes: H01L 21/76877 Filling of holes, grooves or trenches, e.g. vias, with conductive material
• CPC Class Codes: H01L 23/5226 Via connections in a multilevel interconnection structure
• CPC Class Codes: H01L 23/53209 based on metals, e.g. alloys, metal silicides H01L23/53285 takes precedence
• CPC Class Codes: H01L 23/53223 Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 23/53238 Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers

Abstract

A semiconductor device and method of making the same, wherein in accordance with an embodiment of the present invention, the device includes a first conductive line including a first conductive material, and a second conductive line including a second conductive material. A via connects the first conductive line to the second conductive line, wherein the via includes conductive via material, wherein the via material top surface is coated with a liner material, wherein the via is a bottomless via.

Claims

1. A semiconductive device comprising:

a first conductive line including a first conductive material;

a second conductive line including a second conductive material;

a via connecting the first conductive line and the second conductive line, wherein the via includes a via material, wherein the via material includes a via material top surface, wherein the via material is in direct physical contact with the first conductive line, wherein the via material top surface is convex;

a first liner material coating inner surfaces of the via side walls; and

a second liner material coating the via material top surface.

2. A semiconductive device comprising:

a first conductive line including a first conductive material;

a second conductive line including a second conductive material;

a via connecting the first conductive line and the second conductive line, wherein the via includes a via material, wherein the via material includes a via material top surface;

a first liner material coating inner surfaces of the via side walls; and

a second liner material coating the via material top surface.

3. The semiconductive device of claim 2, wherein the via material is in direct physical contact with the first conductive line.

4. The semiconductive device of claim 2, wherein the second liner material physically isolates the via material from the second conductive line.

5. The semiconductive device of claim 2, wherein the via material top surface extends above a bottom surface of the second conductive line.

6. The semiconductive device of claim 2, wherein the via material top surface is curved.

7. The semiconductive device of claim 2, wherein the first liner material includes titanium, titanium nitride, tungsten, titanium tungsten, tungsten nitride, tantalum, TaN, TaN/Ta, Ta/TaN, Ta/TaN/Ta, or combinations thereof.

8. The semiconductive device of claim 2, wherein the second liner material includes titanium, titanium nitride, tungsten, titanium tungsten, tungsten nitride, tantalum, TaN, TaN/Ta, Ta/TaN, Ta/TaN/Ta, or combinations thereof.

9. The semiconductive device of claim 2, wherein the first dielectric material and the second dielectric material are different.

10. The semiconductive device of claim 2, wherein the via material includes copper.