Semiconductor Devices and Methods for Forming a Semiconductor Device
First Claim
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1. A semiconductor device comprising:
- an electrically conductive contact pad structure;
a bond structure in contact with the electrically conductive contact pad structure at an enclosed interface region; and
a degradation prevention structure laterally surrounding the enclosed interface region, wherein the degradation prevention structure is vertically located between a portion of the bond structure and a portion of the electrically conductive contact pad structure.
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Abstract
A semiconductor device includes an electrically conductive contact pad structure. Moreover, the semiconductor device includes a bond structure. The bond structure is in contact with the electrically conductive contact pad structure at least at an enclosed interface region. Additionally, the semiconductor device includes a degradation prevention structure laterally surrounding the enclosed interface region. The degradation prevention structure is vertically located between a portion of the bond structure and a portion of the electrically conductive contact pad structure.
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Citations
20 Claims
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1. A semiconductor device comprising:
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an electrically conductive contact pad structure; a bond structure in contact with the electrically conductive contact pad structure at an enclosed interface region; and a degradation prevention structure laterally surrounding the enclosed interface region, wherein the degradation prevention structure is vertically located between a portion of the bond structure and a portion of the electrically conductive contact pad structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. A semiconductor device comprising:
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an electrically conductive contact pad structure comprising a first predominant electrically conductive material; a bond structure comprising a second predominant electrically conductive material different from the first predominant electrically conductive material, wherein at least one of the electrically conductive contact pad structure and the bond structure comprises an intermetallic phase region at an interface region between the electrically conductive contact pad structure and the bond structure; and a degradation prevention structure located laterally adjacent to the intermetallic phase region, wherein the degradation prevention structure is vertically located between a portion of the bond structure and a portion of the electrically conductive contact pad structure.
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20. A method for forming a semiconductor device, the method comprising:
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forming a degradation prevention structure at an electrically conductive contact pad structure of the semiconductor device, wherein the degradation prevention structure laterally surrounds a portion of a surface of the electrically conductive contact pad structure; and attaching a bond structure at the portion of the surface of the electrically conductive contact pad structure laterally surrounded by the degradation prevention structure, wherein after attaching the degradation prevention structure is vertically located between a portion of the bond structure and a portion of the electrically conductive contact pad structure.
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Specification