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Semiconductor Devices and Methods for Forming a Semiconductor Device

  • US 20180061742A1
  • Filed: 08/24/2017
  • Published: 03/01/2018
  • Est. Priority Date: 08/25/2016
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • an electrically conductive contact pad structure;

    a bond structure in contact with the electrically conductive contact pad structure at an enclosed interface region; and

    a degradation prevention structure laterally surrounding the enclosed interface region, wherein the degradation prevention structure is vertically located between a portion of the bond structure and a portion of the electrically conductive contact pad structure.

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