HORIZONTAL GATE ALL AROUND AND FINFET DEVICE ISOLATION
First Claim
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1. A device structure, comprising:
- a substrate having a superlattice structure formed thereon, the superlattice structure comprising;
a silicon material layer;
a first silicon germanium material layer comprising between about 20% and about 40% germanium; and
a second silicon germanium material layer comprising between about 50% and about 80% germanium, wherein the silicon material layer, the first silicon germanium material layer, and the second silicon germanium layer are disposed in a stacked arrangement.
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Abstract
Embodiments described herein generally relate to methods and device structures for horizontal gate all around (hGAA) isolation and fin field effect transistor (FinFET) isolation. A superlattice structure comprising different materials arranged in an alternatingly stacked formation may be formed on a substrate. In one embodiment, at least one of the layers of the superlattice structure may be oxidized to form a buried oxide layer adjacent the substrate.
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20 Claims
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1. A device structure, comprising:
a substrate having a superlattice structure formed thereon, the superlattice structure comprising; a silicon material layer; a first silicon germanium material layer comprising between about 20% and about 40% germanium; and a second silicon germanium material layer comprising between about 50% and about 80% germanium, wherein the silicon material layer, the first silicon germanium material layer, and the second silicon germanium layer are disposed in a stacked arrangement. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A device structure, comprising:
a superlattice structure, comprising; a silicon material layer; a first silicon germanium material layer comprising between about 20% and about 40% germanium; and a second silicon germanium material layer comprising between about 50% and about 80% germanium, wherein the silicon material layer, the first silicon germanium material layer, and the second silicon germanium layer are disposed in a stacked arrangement. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19)
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20. A device structure, comprising:
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a silicon material layer disposed on a substrate; a buried oxide layer disposed on the silicon material layer; a superlatice structure disposed on the buried oxide layer, comprising; a plurality first silicon germanium material layers comprising between about 20% and about 40% germanium; and a plurality of second silicon germanium material layers comprising between about 50% and about 80% germanium, the first plurality of silicon germanium material layer and the second plurality of silicon germanium material layers disposed in an alternating stacked arrangement; and a hardmask disposed on at least one of the first silicon germanium material layers.
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Specification