DISPLAY DEVICE AND METHOD OF MANUFACTURING SAME

• US 20180069063A1
• Filed: 08/29/2017
• Published: 03/08/2018
• Est. Priority Date: 09/02/2016
• Status: Active Grant

• Current Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Original Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Inventors: KIM, Woongsik, KIM, Minwoo, PARK, Wonsang
• Granted Patent: US 10,332,947 B2
• Time in Patent Office: Days
• CPC Class Codes: G02F 1/133345 Insulating layers G02F1/1335, G02F1/1337, G02F1/135, G02F1/136 take precedence
• CPC Class Codes: G02F 1/1343 Electrodes reflective electrodes G02F1/133553
• CPC Class Codes: G02F 1/136213 Storage capacitors associated with the pixel electrode
• CPC Class Codes: H10K 50/844 Encapsulations
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/121 characterised by the geometry or disposition of pixel elements
• CPC Class Codes: H10K 59/123 Connection of the pixel electrodes to the thin film transistors [TFT]
• CPC Class Codes: H10K 71/00 Manufacture or treatment specially adapted for the organic devices covered by this subclass
• CPC Class Codes: Y02E 10/549 Organic PV cells
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product

Abstract

A display device comprises a circuit element layer on a substrate and comprising a thin film transistor, a storage capacitor, and a pixel electrode connected thereto, a display layer comprising an emission layer, an opposite electrode on the emission layer, and a functional layer, a thin encapsulation layer on the display layer, the thin encapsulation layer comprising at least one inorganic layer and at least one organic layer, and a through portion passing through the substrate, the circuit element layer, the display layer, and the thin encapsulation layer, wherein a slope angle of a lateral surface of the display layer adjacent to the through portion is different from that of one of a lateral surface of the substrate, a lateral surface of the circuit element layer, and a lateral surface of the thin encapsulation layer that are adjacent to the through portion.

Claims

1. A display device comprising:

a substrate;

a circuit element layer on the substrate, the circuit element layer comprising a thin film transistor, a storage capacitor, and a pixel electrode electrically connected to the thin film transistor and the storage capacitor;

a display layer on the circuit element layer, the display layer comprising an emission layer, an opposite electrode on the emission layer, and a functional layer arranged in at least one of a space between the emission layer and the opposite electrode and a space between the emission layer and the pixel electrode;

a thin encapsulation layer on the display layer, the thin encapsulation layer comprising at least one inorganic layer and at least one organic layer; and

a through portion passing through the substrate, the circuit element layer, the display layer, and the thin encapsulation layer,

wherein a slope angle of a lateral surface of the display layer adjacent to the through portion is different from a slope angle of one of a lateral surface of the substrate, a lateral surface of the circuit element layer, and a lateral surface of the thin encapsulation layer that are adjacent to the through portion.

2. The display device of claim 1, wherein the functional layer comprises at least one of a hole injection layer, a hole transport layer, an electron injection layer, and an electron transport layer.

3. The display device of claim 1, wherein the display layer comprises at least one of a capping layer and an inorganic barrier layer, the capping layer and the inorganic barrier layer being on the opposite electrode.

4. The display device of claim 1, further comprising:

an additional inorganic layer on the thin encapsulation layer, the additional inorganic layer covering a lateral surface of the at least one organic layer that is adjacent to the through portion and the lateral surface of the display layer.

5. The display device of claim 4, wherein the additional inorganic layer directly contacts an inorganic insulating layer of the circuit element layer.

6. The display device of claim 1, further comprising:

a step difference portion adjacent to the through portion and having an undercut shape.

7. The display device of claim 6, wherein the step difference portion is between the display layer and the substrate.

8. The display device of claim 6, wherein the step difference portion comprises:

a first layer and a second layer comprising materials different from each other.

9. The display device of claim 1, wherein the substrate comprises a resin material.

10. A method of manufacturing a display device, the method comprising:

forming a circuit element layer on a substrate and comprising a thin film transistor, a storage capacitor, and a pixel electrode electrically connected to the thin film transistor and the storage capacitor;

forming a display layer on the circuit element layer, the display layer comprising an emission layer, an opposite electrode, and a functional layer arranged in at least one of a space between the emission layer and the opposite electrode and a space between the emission layer and the pixel electrode;

forming a thin encapsulation layer on the display layer, the thin encapsulation layer comprising at least one inorganic layer and at least one organic layer; and

forming a through portion passing through the substrate, the circuit element layer, the display layer, and the thin encapsulation layer,

wherein the forming of the through portion is performed by using mechanical polishing which removes a portion of at least one of the thin encapsulation layer, the display layer, the circuit element layer, and the substrate.

11. The method of claim 10, wherein a slope angle of a lateral surface of the display layer adjacent to the through portion is different from a slope angle of one of a lateral surface of the substrate adjacent to the through portion, a lateral surface of the circuit element layer, and a lateral surface of the thin encapsulation layer.

12. The method of claim 10, wherein in the forming of the display layer, the functional layer comprises at least one of a hole injection layer, a hole transport layer, an electron injection layer, and an electron transport layer.

13. The method of claim 10, wherein the forming of the display layer comprises:

forming one of a capping layer and an inorganic barrier layer on the opposite electrode.

14. The method of claim 10, wherein a polishing tape and a tip are used for the mechanical polishing.

15. The method of claim 10, wherein the forming of the through portion comprises:

forming a preliminary through portion by removing a portion of the thin encapsulation layer and a portion of the display layer via the mechanical polishing; and

irradiating a laser beam to a location corresponding to the preliminary through portion.

16. The method of claim 15, further comprising:

forming an additional inorganic layer on the thin encapsulation layer in which the preliminary through portion has been formed.

17. The method of claim 10, wherein the forming of the circuit element layer comprises:

forming a step difference portion having an undercut shape, the step difference portion being adjacent to the through portion.

18. The method of claim 17, wherein the step difference portion comprises:

a first layer and a second layer comprising materials different from each other.

19. The method of claim 17, wherein the forming of the through portion comprises:

forming a preliminary through portion by removing a portion of the display layer via the mechanical polishing; and

irradiating a laser beam to a location corresponding to the preliminary through portion.

20. The method of claim 17, wherein the forming of the through portion comprises:

forming the through portion by removing a portion of the thin encapsulation layer, the display layer, the circuit element layer, and the substrate via the mechanical polishing.