SEMICONDUCTOR DEVICES INCLUDING TRAP RICH LAYER REGIONS
First Claim
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1. A device comprising:
- a substrate comprising a first trap rich layer region and a second trap rich layer region, wherein the first trap rich layer region is separated from the second trap rich layer region by a portion of the substrate; and
a semiconductor device layer including one or more components, the one or more components including a first component, wherein the first component is aligned with at least a portion of the first trap rich layer region.
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Abstract
In a particular aspect, a device includes a substrate including a first trap rich layer region and a second trap rich layer region. The first trap rich layer region is separated from the second trap rich layer region by a portion of the substrate. The device further includes a semiconductor device layer including one or more components.
12 Citations
33 Claims
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1. A device comprising:
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a substrate comprising a first trap rich layer region and a second trap rich layer region, wherein the first trap rich layer region is separated from the second trap rich layer region by a portion of the substrate; and a semiconductor device layer including one or more components, the one or more components including a first component, wherein the first component is aligned with at least a portion of the first trap rich layer region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 12, 14, 15, 31, 32, 33)
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11. (canceled)
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13. (canceled)
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16. A method of semiconductor fabrication, the method comprising:
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forming a first trap rich layer region within a first region of a substrate during a first portion of an energy application process; and forming a second trap rich layer region within a second region of the substrate during a second portion of the energy application process, wherein the first trap rich layer region is separated from the second trap rich layer region by a portion of the substrate. - View Dependent Claims (17, 19, 20, 21, 22)
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18. (canceled)
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23. A method of semiconductor fabrication, the method comprising:
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forming one or more components of a semiconductor device layer on a first surface of a substrate; and forming a trap rich layer within the substrate by applying energy through a second surface of the substrate, wherein the second surface is opposite to the first surface. - View Dependent Claims (24, 25, 26, 27)
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28. A method of semiconductor fabrication, the method comprising:
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forming a laser stop layer within a substrate; and applying a laser to the substrate to form a trap rich layer within the substrate. - View Dependent Claims (29, 30)
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Specification