SUBSTRATE PROCESSING APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME

• US 20180073131A1
• Filed: 06/22/2017
• Published: 03/15/2018
• Est. Priority Date: 09/09/2016
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Joon-Myoung Lee, Se-Chung Oh, Whan-Kyun Kim, Yong-Sung Park, Young-Man Jang
• Inventors: LEE, Joon-Myoung, PARK, Yong-Sung, KIM, Whan-Kyun, OH, Se-Chung, JANG, Young-Man
• Granted Patent: US 10,640,865 B2
• Time in Patent Office: Days
• CPC Class Codes: C23C 14/0036 Reactive sputtering
• CPC Class Codes: C23C 14/0063 characterised by means for introducing or removing gases
• CPC Class Codes: C23C 14/0068 characterised by means for confinement of gases or sputtered material, e.g. screens, baffles
• CPC Class Codes: C23C 14/08 Oxides C23C14/10 takes precedence
• CPC Class Codes: C23C 14/34 Sputtering
• CPC Class Codes: C23C 14/541 Heating or cooling of the substrates
• CPC Class Codes: C23C 14/566 using a load-lock chamber
• CPC Class Codes: C23C 16/45563 Gas nozzles
• CPC Class Codes: H01J 37/3244 Gas supply means
• CPC Class Codes: H01J 37/32715 Workpiece holder
• CPC Class Codes: H01J 37/32724 Temperature
• CPC Class Codes: H01J 37/34 operating with cathodic sputtering H01J37/36 takes precedence ; methods of cathodic sputtering C23C14/34

Abstract

A substrate processing apparatus including a chamber accommodating a substrate; a substrate support in the chamber, the substrate support supporting the substrate; a gas injector to inject an oxidizing gas for oxidizing a metal layer to be disposed on the substrate; a cooler under the substrate to cool the substrate; a target mount disposed on the substrate, the target mount including a target for performing a sputtering process; and a blocker between the target and the gas injector, the blocker shielding the target from the oxidizing gas injected from the gas injector.

Claims

1. A substrate processing apparatus, comprising:

a chamber accommodating a substrate;

a substrate support in the chamber, the substrate support supporting the substrate;

a gas injector to inject an oxidizing gas for oxidizing a metal layer to be disposed on the substrate;

a cooler under the substrate to cool the substrate;

a target mount disposed on the substrate, the target mount including a target for performing a sputtering process; and

a blocker between the target and the gas injector, the blocker shielding the target from the oxidizing gas injected from the gas injector.

2. The substrate processing apparatus as claimed in claim 1, wherein the cooler:

is in the substrate support, and

includes a cooling gas passage into which the cooling gas is flowed.

3. The substrate processing apparatus as claimed in claim 1, wherein the cooler is operated to maintain the substrate at a temperature of less than about 298K when the oxidizing gas is injected.

4. The substrate processing apparatus as claimed in claim 1, wherein the substrate support includes an electrostatic chuck for supporting the substrate.

5. The substrate processing apparatus as claimed in claim 1, wherein the gas injector includes a showerhead for uniformly injecting the oxidizing gas toward the substrate.

6. The substrate processing apparatus as claimed in claim 5, wherein the oxidizing gas includes pure oxygen or a compound gas that includes oxygen.

7. The substrate processing apparatus as claimed in claim 1, wherein the blocker:

is movably installed between the target and the substrate support, and

includes a gate that is capable of opening and closing a space between the target and the substrate support.

8. The substrate processing apparatus as claimed in claim 7, wherein:

the gas injector includes a showerhead for injecting the oxidizing gas, and

the showerhead is fixedly installed under the gate.

9. The substrate processing apparatus as claimed in claim 7, wherein the gate is movable such that the gate is not in a position between the target and the substrate when the sputtering process is performed using the target and is in the position between the target and the substrate when an oxidation process is performed using the oxidizing gas.

10. A substrate processing apparatus, comprising:

a chamber accommodating a substrate;

a substrate support in the chamber, the substrate support supporting the substrate;

a cooler under the substrate to cool the substrate;

a gate disposed to be movable on the substrate support in the chamber and operated to selectively divide the chamber into upper and lower chambers;

a gas injector to inject an oxidizing gas for oxidizing a metal layer on the substrate; and

a target mount facing the substrate and including a target for performing a sputtering process.

11. The substrate processing apparatus as claimed in claim 10, further comprising a blocker between the target and the gas injector, wherein the blocker shields the target from the oxidizing gas injected from the gas injector.

12. The substrate processing apparatus as claimed in claim 10, wherein the gas injector include a showerhead that is fixedly installed on a lower portion of the gate.

13. The substrate processing apparatus as claimed in claim 10, wherein the gate is movable such that the gate is not in a position between the target and the substrate when a sputtering process is performed using the target and is in the position between the target and the substrate when an oxidation process is performed using an oxidizing gas.

14. The substrate processing apparatus as claimed in claim 10, wherein the cooler is operated to maintain the substrate at a temperature of less than about 298K when the oxidizing gas is injected.

15. The substrate processing apparatus as claimed in claim 10, wherein:

the substrate support includes an electrostatic chuck for supporting the substrate, and

the electrostatic chuck is in direct contact with a cooling surface of the cooler.

16. A substrate processing apparatus, comprising:

a chamber in which a substrate is accommodatable;

a substrate support in the chamber and on which the substrate is supportable, the substrate support including a cooler therein;

a target mount facing the substrate support, the target mount including a target for performing a sputtering process that forms a metal layer on the substrate,

a gas injector to inject an oxidizing gas that oxidizes the metal layer on the substrate;

a blocker between the target and the gas injector, the blocker shielding the target from the oxidizing gas.

17. The substrate processing apparatus as claimed in claim 16, wherein the cooler cools the substrate when the oxidizing gas is injected by the gas injector.

18. The substrate processing apparatus as claimed in claim 16, wherein the gas injector includes a showerhead that uniformly distributes the oxidizing gas onto the substrate.

19. The substrate processing apparatus as claimed in claim 16, wherein the blocker:

is movably installable between the target and the substrate support, and

includes a gate that is capable of separating a space between the target and the substrate support.

20. The substrate processing apparatus as claimed in claim 19, wherein:

the gas injector includes a showerhead that uniformly distributes the oxidizing gas onto the substrate, and

the showerhead is fixedly installed on a substrate-facing side of the gate.