MULTIPLE DEGREE OF FREEDOM MEMS SENSOR CHIP AND METHOD FOR FABRICATING THE SAME

• US 20180074090A1
• Filed: 03/17/2016
• Published: 03/15/2018
• Est. Priority Date: 03/18/2015
• Status: Abandoned Application

• Current Assignee: Motion Engine inc
• Original Assignee: Motion Engine inc
• Inventors: Boysel, Robert Mark
• Application Number:
  US15/558,807
• Publication Number:
  US 20180074090A1
• Time in Patent Office: Days
• CPC Class Codes: B81B 2201/0235 Accelerometers
• CPC Class Codes: B81B 2201/0242 Gyroscopes
• CPC Class Codes: B81B 2201/0264 Pressure sensors
• CPC Class Codes: B81B 2201/0292 Sensors not provided for in B81B2201/0207 - B81B2201/0285
• CPC Class Codes: B81B 7/0061 suitable for fluid transfer from the MEMS out of the package or vice versa, e.g. transfer of liquid, gas, sound
• CPC Class Codes: B81B 7/02 containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS] B81B7/04 takes precedence
• CPC Class Codes: B81C 1/00238 Joining a substrate with an electronic processing unit and a substrate with a micromechanical structure
• CPC Class Codes: B81C 1/00309 suitable for fluid transfer from the MEMS out of the package or vice versa, e.g. transfer of liquid, gas, sound
• CPC Class Codes: G01C 19/5712 the devices involving a micromechanical structure
• CPC Class Codes: G01C 19/574 the devices having two sensing masses in anti-phase motion
• CPC Class Codes: G01C 19/5762 the sensing mass being connected to a driving mass, e.g. driving frames
• CPC Class Codes: G01C 19/5769 Manufacturing; Mounting; Housings
• CPC Class Codes: G01D 21/02 Measuring two or more variables by means not covered by a single other subclass
• CPC Class Codes: G01L 19/0076 using buried connections
• CPC Class Codes: G01L 9/0045 Diaphragm associated with a buried cavity
• CPC Class Codes: G01L 9/0073 using a semiconductive diaphragm
• CPC Class Codes: G01P 15/0802 Details
• CPC Class Codes: G01P 15/097 by vibratory elements
• CPC Class Codes: G01P 15/125 by capacitive pick-up
• CPC Class Codes: G01P 15/18 in two or more dimensions
• CPC Class Codes: G01R 33/028 : Electrodynamic magnetometers
• CPC Class Codes: G01R 33/0286 : comprising microelectromechanical systems [MEMS] MEMS devices in general B81B

Abstract

A single Micro-Electro-Mechanical System (MEMS) sensor chip is provided, for measuring multiple parameters, referred to as multiple degrees of freedom (DOF). The sensor chip comprises a central MEMS wafer bonded to a top cap wafer and a bottom cap wafer, all three wafer being electrically conductive. The sensor comprises at least two distinct sensors, each patterned in the electrically conductive MEMS wafer and in at least one of the top and bottom cap wafer. Insulated conducting pathways extend from electrical connections on the top or bottom cap wafers, through at least one of the electrically conductive top cap and bottom cap wafers, and through the electrically conductive MEMS wafer, to the sensors, for conducting electrical signals between the sensors and the electrical connections. The two or more distinct sensors are enclosed by the top and bottom cap wafers and by the outer frame of MEMS wafer.

Claims

1. A single Micro-Electro-Mechanical System (MEMS) sensor chip for measuring multiple parameters, referred to as multiple degrees of freedom (DOF), the sensor chip comprising:

an electrically conductive MEMS wafer having first and second sides and an outer frame;

an electrically conductive top cap wafer having an inner top cap side and an outer top cap side, the inner top cap side being bonded to the first side of the MEMS wafer;

an electrically conductive bottom cap wafer having an inner bottom cap side and an outer bottom cap side, the inner bottom cap side being bonded to the second side of the MEMS wafer,

at least one of the outer top cap side and the outer bottom cap side comprising electrical connections;

at least two distinct sensors, each patterned in the electrically conductive MEMS wafer and in at least one of the top and bottom cap wafer, said sensors being operative to sense at least two distinct parameters, respectively, along at least one of mutually orthogonal X, Y and Z axes; and

insulated conducting pathways extending from said electrical connections, through at least one of the electrically conductive top cap and bottom cap wafers, and through the electrically conductive MEMS wafer, to said sensors, for conducting electrical signals between said sensors and the electrical connections, said sensors being enclosed by the electrically conductive top and bottom cap wafers and by the outer frame of the electrically conductive MEMS wafer.

2. The single MEMS sensor chip according to claim 1, wherein at least one of said sensors is hermetically sealed within said electrically conductive top and bottom cap wafers and by the electrically conducting MEMS wafer.

3. The single MEMS sensor chip according to claim 1, wherein one of said sensors is a pressure sensor.

4. The single MEMS sensor chip according to claim 1, wherein one of said sensors is 3-DOF magnetometer.

5. The single MEMS sensor chip according to claim 1, wherein one of said sensors is an inertial sensor including at least one bulk proof mass suspended in a cavity by flexible springs patterned in the electrically conductive MEMS wafer, the flexible springs enabling the bulk proof mass to move relative to the outer frame along the x, y and x axes, the cavity being defined by the inner top cap side and by the inner bottom cap side of the electrically conductive top and bottom cap wafers, and by sidewalls patterned in the electrically conductive MEMS wafer.

6. The single MEMS sensor chip according to claim 5, wherein said inertial sensor comprises a 3-DOF accelerometer and one of said at least two distinct parameters is an acceleration of the MEMS sensor chip, wherein the at least one bulk proof mass comprises an accelerometer proof mass, the 3-DOF accelerometer comprising accelerometer electrodes patterned in at least one of the electrically conductive top and bottom cap wafers, the accelerometer electrodes facing the accelerometer proof mass and being operable to detect a translational motion of the accelerometer proof mass, indicative of the acceleration of the MEMS sensor chip along the X, Y and Z axes.

7. The single MEMS sensor chip according to claim 5, wherein said inertial sensor comprises a 3 DOF angular rate sensor and one of said at least two distinct parameters is an angular rate of the MEMS sensor chip;

wherein the at least one bulk proof mass comprises at least one angular rate sensor proof mass, suspended in a corresponding angular rate cavity;

the 3-DOF angular rate sensor comprising angular rate sensor electrodes patterned in at least one of the electrically conductive top and bottom cap wafers, the angular rate sensor electrodes facing the angular rate sensor proof mass and being operable to drive the angular rate proof mass and to detect a rocking motion of the angular rate sensor proof mass, indicative of the angular rate of the MEMS sensor chip about the X, Y and Z axes.

8. The single MEMS sensor chip according to claim 5, wherein one of said sensors is a pressure sensor and one of said parameters is a pressure, said pressure sensor comprising:

a pressure sensor membrane patterned in the MEMS wafer and suspended over at least one pressure sensor cavity, and

one or more pressure sensor electrode(s) patterned in at least one of the electrically conductive top and bottom cap wafers and facing pressure sensor membrane, the pressure sensor electrode(s) being operable to detect a deflection of said pressure sensor membrane, indicative of a variation of the pressure in the MEMS sensor chip.

9. The single MEMS sensor chip according to claim 5, wherein one of said sensors is a 3-DOF magnetometer, and one of said parameters is a magnetic field, the 3DOF magnetometer comprising:

two in-plane or X and Y magnetometers including;

resonant membranes, patterned in the MEMS wafer and aligned with the X and Y axis respectively; and

magnetometer electrodes associated with the resonant membranes and patterned in one of the electrically conductive top and bottom cap wafers, the magnetometer electrodes being operatively coupled to the resonant membranes, to detect motion of resonant membranes along the Z axis, indicative of a component of a magnetic field along the X or Y axis; and

one out-of-plane or Z magnetometer, including;

a comb structure patterned in the MEMS wafer, to detect a motion of the comb sensor along one of the X or Y axis, indicative of a component of a magnetic field along the Z axis,

whereby in use, alternating current is injected in the X, Y and Z magnetometers, a Lorentz force acting on the resonant membranes and/or comb structure in response to the magnetic field ({right arrow over (F_L)}=I{right arrow over (L)}×

{right arrow over (B)}).

10. The single MEMS sensor chip according to claim 1, wherein the electrically conductive MEMS, top cap and bottom cap wafers are made of an electrically conductive silicon-based semiconductor material.

11. The single MEMS sensor chip according to claim 1, wherein the electrically conductive MEMS wafer is a silicon-on-insulator (SOI) wafer, said SOI wafer including a device layer, a handle layer, and an insulating layer sandwiched between the device and handle layers.

12. The single MEMS sensor chip according to claim 1, wherein at least one of the electrically conductive top cap and bottom cap wafers is an SOI wafer.

13. The single MEMS sensor chip according to claims 5, wherein the pressure of said cavity of the inertial sensor is under vacuum.

14. The single MEMS sensor chip according to claim 6, wherein the at least one angular rate sensor proof mass comprises four different angular rate proof masses, each suspended in corresponding angular rate sensor cavities.

15. The single MEMS sensor chip according to claim 8, wherein the at least one pressure sensor cavity comprises first and second pressure sensor cavities, the first pressure sensor cavity being in fluid communication with an outside atmosphere via a vent, and the second pressure sensor cavity being at a predetermined pressure.

16. The single MEMS sensor chip according to claim 8, wherein the at least one pressure sensor cavity is circular, enabling a drum-like deflection of the pressure sensor membrane over its corresponding cavity.

17. The single MEMS sensor chip according to claim 9, wherein the resonant membranes of the 3-DOF magnetometer includes longitudinal strips.

18. The single MEMS sensor chip according to claim 9, wherein the electrically conductive MEMS wafer is an SOI wafer comprising a handle layer and device layer, the resonant membranes and the comb structure are patterned in the device layer of the electrically conductive MEMS wafer, the resonant membranes and the comb structure being suspended over magnetometer cavities etched in the handle layers.

19. The single MEMS sensor chip according to claim 8, wherein the conductive MEMS wafer is an SOI wafer comprising a handle layer and device layer, the pressure sensor membrane are patterned in the device layer of the electrically conductive MEMS wafer, the pressure sensor membrane being suspended over the pressure sensor cavity etched in the handle layer.

20. The single MEMS sensor chip according to claim 1, wherein at least some of the insulated conducting pathways extend through the thickness of the electrically conductive top cap, MEMS or bottom cap wafers and have sidewalls coated with an insulating material, said channel being filled with a conducting material.

21. The single MEMS sensor chip according to claim 1, wherein each of said at least two distinct sensors comprises electrodes patterned on the inner side of the electrically conductive top and bottom cap wafers and in the electrically conductive MEMS wafer, the electrodes being delineated by trenches filled with an insulating material.

22. The single MEMS sensor chip according to claim 21, wherein each of said electrodes is connected to one of said electrical connections by way of a corresponding one of the insulating conducting pathways.

23. The single MEMS sensor chip according to claim 1, said single MEMS sensor chip being a 10-DOF sensor chip wherein said at least two distinct sensors comprises a 3-DOF accelerometer, a 3-DOF angular rate sensor, a 1-DOF pressure sensor and a 3-DOF magnetometer.

24. The single MEMS sensor chip according to claim 1, said single MEMS sensor chip being a 9-DOF sensor chip wherein said at least two distinct sensors comprises a 3-DOF accelerometer, a 3-DOF angular rate sensor and a 3-DOF magnetometer.

25. The single MEMS sensor chip according to claim 1, said single MEMS sensor chip being a 7-DOF sensor chip wherein said at least two distinct sensors comprises a 3-DOF accelerometer;

a 3-DOF angular rate sensor, and a pressure sensor.