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MAGNETIC STORAGE DEVICE

  • US 20180075890A1
  • Filed: 03/15/2017
  • Published: 03/15/2018
  • Est. Priority Date: 09/13/2016
  • Status: Active Grant
First Claim
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1. A magnetic storage device comprising:

  • a memory cell including a magnetoresistive effect element, the magnetoresistive effect element including a storage layer and a reference layer;

    a first line electrically coupled to a first terminal of the magnetoresistive effect element;

    a second line electrically coupled to a second terminal of the magnetoresistive effect element; and

    a write driver,wherein the write driver supplies a first voltage to the first line in a first write operation in which a first resistance value of the magnetoresistive effect element is changed to a second resistance value smaller than the first resistance value, and supplies a second voltage different from the first voltage to the second line in a second write operation in which the second resistance value of the magnetoresistive effect element is changed to the first resistance value.

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