HEAT TREATMENT METHOD AND HEAT TREATMENT DEVICE

• US 20180076061A1
• Filed: 11/18/2015
• Published: 03/15/2018
• Est. Priority Date: 03/26/2015
• Status: Active Grant

• Current Assignee: SCREEN Holdings Co., Ltd.
• Original Assignee: SCREEN Holdings Co., Ltd.
• Inventors: FUSE, Kazuhiko
• Granted Patent: US 10,128,135 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 21/22 Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
• CPC Class Codes: H01L 21/225 using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer H01L21/221 - H01L21/222 take precedence
• CPC Class Codes: H01L 21/265 producing ion implantation
• CPC Class Codes: H01L 21/67115 mainly by radiation
• CPC Class Codes: H01L 21/68742 characterised by a lifting arrangement, e.g. lift pins

Abstract

First, a substrate with one main surface on which a thin film of at least one of a mono-molecular layer and a multi-molecular layer including dopants is formed is prepared. Subsequently, the prepared substrate is placed in a chamber, and dopants included in the thin film are introduced from the thin film into a surface layer of the substrate by providing the substrate, through irradiation with light from a first lamp, with preliminary heat treatment in a first temperature band higher than a temperature before heating. Then, the dopants introduced into the surface layer of the substrate are activated by heating the substrate provided with the preliminary heat treatment and placed in the chamber from the first temperature band to a second temperature band higher than the first temperature band through irradiation with flash light from a second lamp.

Claims

1. A heat treatment method comprising:

step (a) of preparing a substrate with one main surface on which a thin film of at least one of a mono-molecular layer and a multi-molecular layer including dopants is formed;

step (b) of placing said substrate prepared in said step (a) in a chamber;

step (c) of introducing said dopants included in said thin film from the thin film to a surface layer of said substrate by providing said substrate placed in said chamber in said step (b), through irradiation with light from a first lamp, with preliminary heat treatment in a first temperature band higher than a temperature before heating; and

step (d) of activating said dopants introduced into the surface layer of said substrate in said step (c) by heating said substrate provided with the preliminary heat treatment in said step (c) and placed in said chamber from said first temperature band to a second temperature band higher than the first temperature band through irradiation with flash light from a second lamp.

2. The heat treatment method according to claim 1, wherein

in said step (c), said substrate placed in said chamber is provided with first heat treatment in a high temperature band that is higher temperature in said first temperature band through irradiation with light from said first lamp, and then with second heat treatment in a low temperature band that is lower than said high temperature band in said first temperature band, and

in said step (d), said substrate provided with said second heat treatment in said step (c) and placed in said chamber is heated from said low temperature band to said second temperature band through irradiation with said flash light from said second lamp.

3. A heat treatment device configured to heat a substrate through irradiation with light, the device comprising:

a chamber;

a holding unit disposed in the chamber and configured to hold said substrate;

a first irradiator configured to provide said substrate held by said holding unit, through irradiation with light from a first lamp, with preliminary heat treatment in a first temperature band higher than a temperature before heating;

a second irradiator configured to heat said substrate provided with the preliminary heat treatment in said first temperature band by said first irradiator and held by said holding unit from said first temperature band to a second temperature band higher than the first temperature band through irradiation with flash light from a second lamp; and

a control unit configured to control said first irradiator and said second irradiator so that said first irradiator provides said substrate with first heat treatment in a high temperature band that is higher temperature in said first temperature band through irradiation with light from said first lamp, and then with second heat treatment in a low temperature band that is lower than said high temperature band in said first temperature band, and said second irradiator heats said substrate provided with said second heat treatment by said first irradiator and held by said holding unit from said low temperature band to said second temperature band through irradiation with said flash light from said second lamp.