High-voltage Light Emitting Diode and Fabrication Method Thereof

• US 20180076152A1
• Filed: 11/12/2017
• Published: 03/15/2018
• Est. Priority Date: 12/25/2015
• Status: Active Grant

• Current Assignee: Quanzhou Sanan Semiconductor Technology Co., Ltd. (Sanan Optoelectronics Company Limited)
• Original Assignee: Xiamen Sanan Optoelectronics Technology Company Limited (Sanan Optoelectronics Company Limited)
• Inventors: ZHENG, Gaolin, HONG, Ling-yuan, LIN, Xiaoxiong, WANG, Feng, LIN, Su-hui, CHANG, Chia-hung
• Granted Patent: US 10,242,958 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 23/60 Protection against electrostatic charges or discharges, e.g. Faraday shields
• CPC Class Codes: H01L 27/153 in a repetitive configuration, e.g. LED bars
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/385 the electrode extending at least partially onto a side surface of the semiconductor body
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
• CPC Class Codes: H01L 33/648 the elements comprising fluids, e.g. heat-pipes

Abstract

A fabrication method of a high-voltage light-emitting diode includes the steps of providing a substrate, and forming a light-emitting epitaxial laminated layer on the substrate; patterning the light-emitting epitaxial laminated layer and fabricating a channel that exposes the substrate surface so as to divide the light-emitting epitaxial laminated layer into a plurality of light-emitting diode units, and the light-emitting diode units at least constitute two rows; fabricating an electrode interconnection line crossing the channel, wherein, two adjacent light-emitting diode units are connected by the electrode interconnection line; fabricating an electrode bonding pad over the outmost light-emitting diode unit of the high-voltage light-emitting diode; and fabricating an insulating protective layer opening at the channel where the potential difference of any two adjacent light-emitting diodes is ≧3 times of the forward voltage of a single light-emitting diode to avoid breakdown of the light-emitting epitaxial laminated layer.

Claims

1. A high-voltage light-emitting diode, comprising:

a substrate and a light-emitting epitaxial laminated layer over the substrate;

wherein, the light-emitting epitaxial laminated layer has a plurality of light-emitting diode units, wherein, the light-emitting diode units at least constitute two rows, and are separated through a channel;

an electrode interconnection line crossing the channel, wherein, two adjacent light-emitting diode units are connected by the electrode interconnection line;

an electrode bonding pad over the outmost light-emitting diode unit of the high-voltage light-emitting diode;

an insulating protective layer over the high-voltage light-emitting diode surface except the electrode bonding pad area;

wherein;

an insulating protective layer opening is provided at the channel where the potential difference of any two adjacent light-emitting diodes is ≧

3 times of a forward voltage of a single light-emitting diode, to avoid breakdown of the light-emitting epitaxial laminated layer, which may be induced by heat produced at the time of dielectric breakdown of the insulating protective layer.

2. The high-voltage light-emitting diode of claim 1, wherein:

the high-voltage light-emitting diode also comprises a wavelength conversion layer, as an insulating protective layer, over the high-voltage light-emitting diode surface except the electrode bonding pad area.

3. The high-voltage light-emitting diode of claim 1, wherein:

the light-emitting diode unit rows are distributed in C-shaped, inverse-C-shaped, S-shaped, inverse-S-shaped or any of their combinations.

4. The high-voltage light-emitting diode of claim 1, wherein:

the insulating protective layer opening is located in the horizontal channel and/or vertical channel of the light-emitting diode unit.

5. The high-voltage light-emitting diode of claim 1, wherein, the insulating protective layer opening is T-shaped, I-shaped, line-shaped or any of their combinations.

6. The high-voltage light-emitting diode of claim 5, wherein, length of the insulating protective layer opening at the horizontal or vertical channel of the light-emitting diode unit is 3 times or above of the channel width.

7. A high-voltage light-emitting diode, comprising:

a substrate and a light-emitting epitaxial laminated layer on the substrate;

wherein, the light-emitting epitaxial laminated layer has a plurality of light-emitting diode units, wherein, the light-emitting diode units at least constitute two rows, and are separated through a channel;

an electrode interconnection line crossing the channel, wherein, two adjacent light-emitting diode units are connected by the electrode interconnection line;

an electrode bonding pad over the outmost light-emitting diode unit of the high-voltage light-emitting diode;

an insulating protective layer over the high-voltage light-emitting diode surface except the electrode bonding pad area;

wherein, an insulating protective layer opening is provided between the first and the last light-emitting diode units of any two adjacent light-emitting diode unit rows, to avoid breakdown of the light-emitting epitaxial laminated layer, which may be induced by heat produced at the time of dielectric breakdown of the insulating protective layer.

8. The high-voltage light-emitting diode of claim 7, wherein:

the high-voltage light-emitting diode also comprises a wavelength conversion layer, as an insulating protective layer, over the high-voltage light-emitting diode surface except the electrode bonding pad area.

9. The high-voltage light-emitting diode of claim 7, wherein:

the light-emitting diode unit rows are distributed in C-shaped, inverse-C-shaped, S-shaped, inverse-S-shaped or any of their combinations.

10. The high-voltage light-emitting diode of claim 7, wherein:

the insulating protective layer opening is located in the horizontal channel and/or vertical channel of the light-emitting diode unit.

11. The high-voltage light-emitting diode of claim 7, wherein, the insulating protective layer opening is T-shaped, I-shaped, line-shaped or any of their combinations.

12. The high-voltage light-emitting diode of claim 11, wherein, length of the insulating protective layer opening at the horizontal or vertical channel of the light-emitting diode unit is 3 times or above of the channel width.

13. A fabrication method of a high-voltage light-emitting diode, comprising:

providing a substrate, and forming a light-emitting epitaxial laminated layer over the substrate;

patterning the light-emitting epitaxial laminated layer and fabricating a channel that exposes the substrate surface so as to divide the light-emitting epitaxial laminated layer into a plurality of light-emitting diode units, and the light-emitting diode units at least constitute two rows;

fabricating an electrode interconnection line crossing the channel, wherein, two adjacent light-emitting diode units are connected by the electrode interconnection line;

fabricating an electrode bonding pad over the outmost light-emitting diode unit of the high-voltage light-emitting diode;

fabricating an insulating protective layer over the high-voltage light-emitting diode surface except the electrode bonding pad area;

wherein, an insulating protective layer opening is provided at the channel where the potential difference of any two adjacent light-emitting diodes is ≧

3 times of a forward voltage of a single light-emitting diode, to avoid breakdown of the light-emitting epitaxial laminated layer, which may be induced by heat produced at the time of dielectric breakdown of the insulating protective layer.

14. The method of claim 13, wherein the high-voltage light-emitting diode comprises:

the substrate and the light-emitting epitaxial laminated layer over the substrate;

wherein, the light-emitting epitaxial laminated layer has a plurality of light-emitting diode units, wherein, the light-emitting diode units at least constitute two rows, and are separated through a channel;

an electrode interconnection line crossing the channel, wherein, two adjacent light-emitting diode units are connected by the electrode interconnection line;

an electrode bonding pad over the outmost light-emitting diode unit of the high-voltage light-emitting diode;

an insulating protective layer over the high-voltage light-emitting diode surface except the electrode bonding pad area;

wherein;

an insulating protective layer opening is provided at the channel where the potential difference of any two adjacent light-emitting diodes is ≧

3 times of a forward voltage of a single light-emitting diode, to avoid breakdown of the light-emitting epitaxial laminated layer, which may be induced by heat produced at the time of dielectric breakdown of the insulating protective layer.

15. The method of claim 13, wherein:

the high-voltage light-emitting diode also comprises a wavelength conversion layer, as an insulating protective layer, over the high-voltage light-emitting diode surface except the electrode bonding pad area.

16. The method of claim 13, wherein:

the light-emitting diode unit rows are distributed in C-shaped, inverse-C-shaped, S-shaped, inverse-S-shaped or any of their combinations.

17. The method of claim 13, wherein:

the insulating protective layer opening is located in the horizontal channel and/or vertical channel of the light-emitting diode unit.

18. The method of claim 13, wherein, the insulating protective layer opening is T-shaped, I-shaped, line-shaped or any of their combinations.

19. The method of claim 18, wherein, length of the insulating protective layer opening at the horizontal or vertical channel of the light-emitting diode unit is 3 times or above of the channel width.