METHOD OF CONTACT FORMATION BETWEEN METAL AND SEMICONDUCTOR
First Claim
1. A method for forming a device, comprising:
- forming a semiconductor layer on a silicon substrate;
forming an interfacial layer over the semiconductor layer, wherein the interfacial layer comprises one or more of germanium, boron, gallium, indium, thallium, arsenic, antimony, tin, silicon, and phosphorus, and wherein the interfacial layer has a thickness of between about 50 angstroms and about 100 angstroms; and
forming a metal contact layer over the interfacial layer.
1 Assignment
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Accused Products
Abstract
Implementations of the present disclosure generally relate to improved semiconductor devices and methods of manufacture thereof. More specifically, implementations disclosed herein relate to a semiconductor device having an improved contact interface between the semiconductor material and metal material and methods of manufacture thereof. The method includes forming a semiconductor layer on a silicon substrate, forming an interfacial layer over the semiconductor layer, and forming a metal contact layer over the interfacial layer. The interfacial layer comprises one or more of germanium, boron, gallium, indium, thallium, arsenic, antimony, tin, silicon, and phosphorus, and has a thickness of between about 50 angstroms and about 100 angstroms. The interfacial layer improves the quality of the contact interface between the semiconductor material and metal material.
12 Citations
20 Claims
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1. A method for forming a device, comprising:
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forming a semiconductor layer on a silicon substrate; forming an interfacial layer over the semiconductor layer, wherein the interfacial layer comprises one or more of germanium, boron, gallium, indium, thallium, arsenic, antimony, tin, silicon, and phosphorus, and wherein the interfacial layer has a thickness of between about 50 angstroms and about 100 angstroms; and forming a metal contact layer over the interfacial layer. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A device, comprising:
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a silicon substrate; a semiconductor layer contacting the silicon substrate; an interfacial layer contacting the semiconductor layer, wherein the interfacial layer comprises one or more of germanium, boron, gallium, indium, thallium, arsenic, antimony, tin, silicon, and phosphorus, and wherein the interfacial layer has a thickness of between about 50 angstroms and about 100 angstroms; and a metal contact layer contacting the interfacial layer. - View Dependent Claims (8, 9, 10, 11, 12, 13)
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14. A device, comprising:
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a silicon substrate; a first semiconductor layer and a second semiconductor layer contacting the silicon substrate, wherein the first semiconductor layer and the second semiconductor layer are separated by a channel layer, an insulating layer contacts the channel layer, and a gate layer contacts the insulating layer; a first interfacial layer contacting the first semiconductor layer and a second interfacial layer contacting the second semiconductor layer, wherein the first interfacial layer and the second interfacial layer comprise one or more of germanium, boron, gallium, indium, thallium, arsenic, antimony, tin, silicon, and phosphorus, and wherein the first interfacial layer and the second interfacial layer have a thickness of between about 50 angstroms and about 100 angstroms; and a first metal contact layer contacts the first interfacial layer and a second metal contact layer contacts the second interfacial layer. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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Specification