NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE

• US 20180076355A1
• Filed: 03/22/2016
• Published: 03/15/2018
• Est. Priority Date: 04/09/2015
• Status: Abandoned Application

• Current Assignee: Panasonic Intellectual Property Management Co., Ltd. (Panasonic Holdings Corporation)
• Original Assignee: Panasonic Intellectual Property Management Co., Ltd. (Panasonic Holdings Corporation)
• Inventors: HAYASHI, Shintaro, MURAI, Akihiko
• Application Number:
  US15/564,683
• Publication Number:
  US 20180076355A1
• Time in Patent Office: Days
• CPC Class Codes: H01L 24/14 of a plurality of bump connectors
• CPC Class Codes: H01L 2924/01322 Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 2933/0066 relating to arrangements for conducting electric current to or from the semiconductor body
• CPC Class Codes: H01L 33/0095 Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/486 adapted for surface mounting
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

An n-type nitride semiconductor layer has at least an n-type AlGaN layer. The nitride semiconductor light emitting device includes a passivation film. A negative electrode includes second contact electrodes that are each in ohmic contact with the n-type AlGaN layer, and a second pad electrode that covers the second contact electrodes and is in non-ohmic contact with the n-type AlGaN layer. A metal layer, which is in non-ohmic contact with the n-type AlGaN layer, of metal layers of the second pad electrode is made from material by which reflectivity of ultraviolet radiation emitted from a luminous layer is less than 50%.

Claims

1. A nitride semiconductor light emitting device, comprising

an n-type nitride semiconductor layer that has at least an n-type AlGaN layer,

a luminous layer that is formed on the n-type AlGaN layer and configured to emit ultraviolet radiation,

a p-type nitride semiconductor layer that is formed on the luminous layer,

a substrate that is a single crystal substrate that supports a nitride semiconductor layer including the n-type nitride semiconductor layer, the luminous layer and the p-type nitride semiconductor layer and allows the ultraviolet radiation emitted from the luminous layer to pass through,

a positive electrode that is provided on a surface of the p-type nitride semiconductor layer,

a negative electrode that is provided on a region of the n-type nitride semiconductor layer, the region being not covered with the luminous layer,

an electrical insulation film in which a first contact hole and a second contact hole are formed, the positive electrode being disposed inside the first contact hole, the negative electrode being disposed inside the second contact hole, and

a passivation film, wherein

the n-type nitride semiconductor layer, the luminous layer and the p-type nitride semiconductor layer are arranged from a side of the substrate in that order,

the n-type AlGaN layer has a first region that the luminous layer overlaps and a second region that the luminous layer does not overlap, and is formed with a step that causes a surface of the second region to set further back than a surface of the first region toward the substrate,

the electrical insulation film covers side faces and part of the surface of the p-type nitride semiconductor layer, side faces of the luminous layer, side faces of the first region of the n-type AlGaN layer and part of the surface of the second region of the n-type AlGaN layer,

the positive electrode includes a first contact electrode that is disposed inside the first contact hole in the electrical insulation film and is in ohmic contact with the p-type nitride semiconductor layer, and a first pad electrode that covers the first contact electrode,

the negative electrode includes second contact electrodes that are disposed inside the second contact hole in the electrical insulation film and are each in ohmic contact with the n-type AlGaN layer, and a second pad electrode that covers the second contact electrodes and is in non-ohmic contact with the n-type AlGaN layer,

the passivation film covers at least surface end part of the second pad electrode and is formed with an opening that exposes central part of the second pad electrode,

the second pad electrode has a laminated construction of metal layers, and

a metal layer as a bottom layer, which is in non-ohmic contact with the n-type AlGaN layer, of the metal layers is made from material by which reflectivity of the ultraviolet radiation emitted from the luminous layer is less than 50%.

2. The nitride semiconductor light emitting device of claim 1, wherein the material of the metal layer as the bottom layer is one kind selected from a group consisting of Ti, Mo, Cr and W.

3. The nitride semiconductor light emitting device of claim 1, further comprising a second electrical insulation film that is different from the electrical insulation film as a first electrical insulation film, wherein

the second electrical insulation film is formed on the surface of the second region in the n-type AlGaN layer between adjoining second contact electrodes of the second contact electrodes.

4. The nitride semiconductor light emitting device of claim 1, wherein the nitride semiconductor light emitting device is formed with a depression in the surface of the second region in the n-type AlGaN layer between adjoining second contact electrodes of the second contact electrodes.

5. The nitride semiconductor light emitting device of claim 1, wherein at least one second contact electrode of the second contact electrodes is greater than a circle with a diameter of 45 μ

m as seen from a thickness direction of the substrate.

6. The nitride semiconductor light emitting device of claim 2, further comprising a second electrical insulation film that is different from the electrical insulation film as a first electrical insulation film, wherein

the second electrical insulation film is formed on the surface of the second region in the n-type AlGaN layer between adjoining second contact electrodes of the second contact electrodes.

7. The nitride semiconductor light emitting device of claim 2, wherein the nitride semiconductor light emitting device is formed with a depression in the surface of the second region in the n-type AlGaN layer between adjoining second contact electrodes of the second contact electrodes.

8. The nitride semiconductor light emitting device of claim 3, wherein the nitride semiconductor light emitting device is formed with a depression in the surface of the second region in the n-type AlGaN layer between adjoining second contact electrodes of the second contact electrodes.

9. The nitride semiconductor light emitting device of claim 2, wherein at least one second contact electrode of the second contact electrodes is greater than a circle with a diameter of 45 μ

m as seen from a thickness direction of the substrate.

10. The nitride semiconductor light emitting device of claim 3, wherein at least one second contact electrode of the second contact electrodes is greater than a circle with a diameter of 45 μ

m as seen from a thickness direction of the substrate.

11. The nitride semiconductor light emitting device of claim 4, wherein at least one second contact electrode of the second contact electrodes is greater than a circle with a diameter of 45 μ

m as seen from a thickness direction of the substrate.