OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME

• US 20180076358A1
• Filed: 11/21/2017
• Published: 03/15/2018
• Est. Priority Date: 07/03/2014
• Status: Active Grant

• Current Assignee: Epistar Corporation (Ennostar, Inc.)
• Original Assignee: Epistar Corporation (Ennostar, Inc.)
• Inventors: CHEN, Chao-Hsing, WANG, Jia-Kuen, LIAO, Chien-Chih, TSENG, Tzu-Yao, KO, Tsun-Kai, SHEN, Chien-Fu
• Granted Patent: US 10,529,893 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 2224/0603 Bonding areas having different sizes, e.g. different heights or widths
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/387 with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
• CPC Class Codes: H01L 33/405 Reflective materials

Abstract

An optoelectronic device, comprising a first semiconductor layer comprising four boundaries comprising two longer sides and two shorter sides; a second semiconductor layer formed on the first semiconductor layer; and a plurality of first conductive type electrodes formed on the first semiconductor layer, wherein one first part of the plurality of first conductive type electrodes is formed on a corner constituted by one of the two longer sides and one of the two shorter sides, and wherein one fourth part of the plurality of first conductive type electrodes is formed along the one of the two longer sides, the one fourth part of the plurality of first conductive type electrodes comprises a head portion and a tail portion, the head portion comprises a width larger than that of the tail portion.

Claims

1. An optoelectronic device, comprising:

a first semiconductor layer comprising four boundaries comprising two longer sides and two shorter sides;

a second semiconductor layer formed on the first semiconductor layer; and

a plurality of first conductive type electrodes formed on the first semiconductor layer,

wherein one first part of the plurality of first conductive type electrodes is formed on a corner constituted by one of the two longer sides and one of the two shorter sides, and

wherein one fourth part of the plurality of first conductive type electrodes is formed along the one of the two longer sides, the one fourth part of the plurality of first conductive type electrodes comprises a head portion and a tail portion, and the head portion comprises a width larger than that of the tail portion.

2. The optoelectronic device of claim 1, wherein another first part of the plurality of first conductive type electrodes is formed on a corner constituted by another one of the two longer sides and the one of the two shorter sides.

3. The optoelectronic device of claim 1, wherein another fourth part of the plurality of first conductive type electrodes is formed along another one of the two longer sides.

4. The optoelectronic device of claim 1, further comprising a second conductive type electrode formed on the second semiconductor layer.

5. The optoelectronic device of claim 4, further comprising a third electrode electrically connected to the plurality of first conductive type electrodes, and a fourth electrode electrically connected to the second conductive type electrode.

6. The optoelectronic device of claim 5, wherein the third electrode and the fourth electrode are separated by a distance larger than 50 μ

m.

7. The optoelectronic device of claim 5, wherein the third electrode covers the one first part of the plurality of first conductive type electrodes and the head portion of the one fourth part of the plurality of first conductive type electrodes.

8. The optoelectronic device of claim 5, wherein the tail portion of the one fourth part of the plurality of first conductive type electrodes is not covered by the fourth electrode.

9. The optoelectronic device of claim 3, further comprising a second conductive type electrode formed on the second semiconductor layer and a fourth electrode electrically connected to the second conductive type electrode, wherein the fourth electrode is between the one fourth part of the plurality of first conductive type electrodes and the another fourth part of the plurality of first conductive type electrodes.

10. The optoelectronic device of claim 1, wherein the one first part of the plurality of first conductive type electrodes comprises a shape comprising polygon, circle, oval or semi-circle.

11. The optoelectronic device of claim 1, further comprising an insulating layer formed on the plurality of first conductive type electrodes, wherein the insulating layer comprises a distributed bragg reflector (DBR) structure.

12. The optoelectronic device of claim 5, wherein from a cross-sectional view of the optoelectronic device, the third electrode comprises concave portions corresponding to the plurality of first conductive type electrodes.

13. The optoelectronic device of claim 1, wherein the one first part of the plurality of first conductive type electrodes is not surrounded by the second semiconductor layer.

14. An optoelectronic device, comprising:

a first semiconductor layer comprising four boundaries;

a second semiconductor layer formed on the first semiconductor layer; and

a plurality of first conductive type electrodes formed on the first semiconductor layer,

wherein multiple first parts of the plurality of first conductive type electrodes are separated from each other along one side of the four boundaries, and

wherein the multiple first parts of the plurality of first conductive type electrodes are not surrounded by the second semiconductor layer.

15. The optoelectronic device of claim 14, wherein the multiple first parts of the plurality of first conductive type electrodes comprises a shape comprising polygon, circle, oval or semi-circle.

16. The optoelectronic device of claim 14, further comprising a second part of the plurality of first conductive type electrodes surrounded by the second semiconductor layer.

17. The optoelectronic device of claim 16, further comprising a third electrode electrically connected to the plurality of first conductive type electrodes, wherein the multiple first parts of the plurality of first conductive type electrodes are not covered by the third electrode, and the second part of the plurality of first conductive type electrodes is covered by the third electrode.

18. The optoelectronic device of claim 14, further comprising a third part of the plurality of first conductive type electrodes formed between the multiple first parts of the plurality of first conductive type electrodes, wherein distances between the third part of the plurality of first conductive type electrodes and each of the multiple first parts of the plurality of first conductive type electrodes are substantially the same.

19. The optoelectronic device of claim 14, further comprising a third electrode formed on the multiple first parts of the plurality of first conductive type electrodes, and an adjustment layer formed between the multiple first parts of the plurality of first conductive type electrodes and the third electrode, wherein the adjustment layer comprises a projected area on the first semiconductor layer, which is larger than a projected area of the third electrode on the first semiconductor layer.

20. The optoelectronic device of claim 19, further comprising a second conductive type electrode formed on the second semiconductor layer, and a fourth electrode electrically connected to the second conductive type electrode.