BONDING METHOD AND BONDED BODY

• US 20180082973A1
• Filed: 03/04/2016
• Published: 03/22/2018
• Est. Priority Date: 03/06/2015
• Status: Abandoned Application

• Current Assignee: Mitsubishi Heavy Industries, Ltd.
• Original Assignee: Mitsubishi Heavy Industries, Ltd.
• Inventors: KATO, Masahiro, HARADA, Shota, ISAYAMA, Takeshi, FUJIEDA, Mitsuteru
• Application Number:
  US15/554,901
• Publication Number:
  US 20180082973A1
• Time in Patent Office: Days
• CPC Class Codes: B23K 20/00 Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
• CPC Class Codes: B23K 20/004 Wire welding
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/05568 the whole external layer protruding from the surface
• CPC Class Codes: H01L 2224/05624 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/05644 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/11 Manufacturing methods
• CPC Class Codes: H01L 2224/11312 Continuous flow, e.g. using a microsyringe, a pump, a nozzle or extrusion
• CPC Class Codes: H01L 2224/1134 Stud bumping, i.e. using a wire-bonding apparatus
• CPC Class Codes: H01L 2224/117 involving monitoring, e.g. feedback loop
• CPC Class Codes: H01L 2224/1184 involving a mechanical process, e.g. planarising the bump connector
• CPC Class Codes: H01L 2224/13016 in side view
• CPC Class Codes: H01L 2224/13023 the whole bump connector protruding from the surface
• CPC Class Codes: H01L 2224/13144 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/141 Disposition
• CPC Class Codes: H01L 2224/16238 the bump connector connecting to a bonding area protruding from the surface of the item
• CPC Class Codes: H01L 2224/742 Apparatus for manufacturing bump connectors
• CPC Class Codes: H01L 2224/745 Apparatus for manufacturing wire connectors
• CPC Class Codes: H01L 2224/75251 in the lower part of the bonding apparatus, e.g. in the apparatus chuck
• CPC Class Codes: H01L 2224/75745 in the upper part of the bonding apparatus, e.g. in the bonding head
• CPC Class Codes: H01L 2224/7592 : Load or pressure adjusting means, e.g. sensors
• CPC Class Codes: H01L 2224/81047 : by mechanical means, e.g. severing, pressing, stamping
• CPC Class Codes: H01L 2224/81048 : Thermal treatments, e.g. annealing, controlled pre-heating or pre-cooling
• CPC Class Codes: H01L 2224/81139 : Guiding structures on the body
• CPC Class Codes: H01L 2224/8114 : Guiding structures outside the body
• CPC Class Codes: H01L 2224/81193 : wherein the bump connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/81194 : Lateral distribution of the bump connectors
• CPC Class Codes: H01L 2224/81203 : Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
• CPC Class Codes: H01L 2224/81345 : Shape, e.g. interlocking features
• CPC Class Codes: H01L 2224/81801 : Soldering or alloying
• CPC Class Codes: H01L 2224/81908 : involving monitoring, e.g. feedback loop
• CPC Class Codes: H01L 24/11 : Manufacturing methods for bumps on insulating substrates H01L21/4853
• CPC Class Codes: H01L 24/13 : of an individual bump connector
• CPC Class Codes: H01L 24/14 : of a plurality of bump connectors
• CPC Class Codes: H01L 24/16 : of an individual bump connector
• CPC Class Codes: H01L 24/742 : Apparatus for manufacturing bump connectors
• CPC Class Codes: H01L 24/745 : Apparatus for manufacturing wire connectors
• CPC Class Codes: H01L 24/75 : Apparatus for connecting with bump connectors or layer connectors
• CPC Class Codes: H01L 24/81 : using a bump connector
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details

Abstract

A bonding method of a first member and a second member includes: forming a first wire bonding bump (12) on a first electrode (14) arranged in the first member; forming a second wire bonding bump (22) on a second electrode 24 arranged in the second member; and flattening a tip section of the second wire bonding bump to form a bump flat surface (221). The tip section (120) of the first wire bonding bump and the bump flat surface (221) are pressure bonded to each other.

Claims

1-8. -8. (canceled)

9. A bonding method comprising:

forming a first wire bonding bump on a first electrode arranged in a first member;

forming a second wire bonding bump on a second electrode arranged in a second member;

flattening a tip section of the second wire bonding bump to form a bump flat surface; and

pressure bonding the tip section of the first wire bonding bump and the bump flat surface.

10. The bonding method according to claim 9, wherein the tip section of the first wire bonding bump is not flattened before the pressure bonding.

11. The bonding method according to claim 9, wherein the flattening includes flattening the tip section of the second wire bonding bump by bringing the tip section of the second wire bonding bump in contact with a flat surface of a pushing member, and

wherein the flat surface of the pushing member is a surface of a silicon board.

12. The bonding method according to claim 9, further comprising:

heating the second wire bonding bump such that the second wire bonding bump becomes hotter than the first wire bonding bump,

wherein the pressure bonding includes pressure bonding the tip section of the first wire bonding bump and the bump flat surface of the second wire bonding bump softened by the heating.

13. The bonding method according to claim 9, further comprising:

forming a third wire bonding bump on a third electrode arranged in the first member,

wherein the tip section of the first wire bonding bump formed in the forming the first wire bonding bump and the tip section of the third wire bonding bump formed in the forming the third wire bonding bump are inclined to face each other.

14. The bonding method according to claim 9, further comprising:

forming a third wire bonding bump on a third electrode arranged in the first member,

wherein the tip section of the first wire bonding bump formed in the forming the first wire bonding bump and the tip section of the third wire bonding bump formed in the forming the third wire bonding bump are inclined to be apart from each other.

15. The bonding method according to claim 9, wherein a distance between a bonded wire bonding bump formed by bonding the first wire bonding bump and the second wire bonding bump and another bonded wire bonding bump is in a range of 1 μ

m to 1000 μ

m.

16. The bonding method according to claim 9, wherein a material of the first wire bonding bump and a material of the first wire bonding bump are identical to each other.