NANOSHEET CHANNEL-TO-SOURCE AND DRAIN ISOLATION

• US 20180083118A1
• Filed: 11/18/2016
• Published: 03/22/2018
• Est. Priority Date: 09/20/2016
• Status: Active Grant

• Current Assignee: Tessera (Adeia Inc.)
• Original Assignee: International Business Machines Corporation
• Inventors: Bergendahl, Marc A., Cheng, Kangguo, Lie, Fee Li, Miller, Eric R., Sporre, John R., Teehan, Sean
• Granted Patent: US 10,249,738 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 21/31111 by chemical means
• CPC Class Codes: H01L 21/76224 using trench refilling with dielectric materials trench filling with polycristalline silicon H01L21/763; together with vertical isolation, e.g. trench refilling in a SOI substrate H01L21/76264
• CPC Class Codes: H01L 29/0653 adjoining the input or output region of a field-effect device, e.g. the source or drain region
• CPC Class Codes: H01L 29/0673 oriented parallel to a substrate
• CPC Class Codes: H01L 29/0847 of field-effect transistors with insulated gate H01L29/0653 takes precedence; with a passive supplementary region between source or drain and substrate related to punch-through, capacity or isolation phenomena H01L29/1079; with LDD or DDD structure H01L29/7833; for thin film transistors H01L29/78618
• CPC Class Codes: H01L 29/41725 Source or drain electrodes for field effect devices with monocrystalline semiconductor on source/drain region H01L29/0843
• CPC Class Codes: H01L 29/42392 fully surrounding the channel, e.g. gate-all-around
• CPC Class Codes: H01L 29/66439 with a one- or zero-dimensional channel, e.g. quantum wire FET, in-plane gate transistor [IPG], single electron transistor [SET], striped channel transistor, Coulomb blockade transistor with an active layer made of a group 13/15 material H01L29/66469
• CPC Class Codes: H01L 29/6653 using the removal of at least part of spacer, e.g. disposable spacer
• CPC Class Codes: H01L 29/66545 using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
• CPC Class Codes: H01L 29/6681 using dummy structures having essentially the same shape as the semiconductor body, e.g. to provide stability
• CPC Class Codes: H01L 29/775 with one dimensional charge carrier gas channel, e.g. quantum wire FET
• CPC Class Codes: H01L 29/7853 the body having a non-rectangular crossection
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621
• CPC Class Codes: H05K 999/99 dummy group

Abstract

A method and structures are used to fabricate a nanosheet semiconductor device. Nanosheet fins including nanosheet stacks including alternating silicon (Si) layers and silicon germanium (SiGe) layers are formed on a substrate and etched to define a first end and a second end along a first axis between which each nanosheet fin extends parallel to every other nanosheet fin. The SiGe layers are undercut in the nanosheet stacks at the first end and the second end to form divots, and a dielectric is deposited in the divots. The SiGe layers between the Si layers are removed before forming source and drain regions of the nanosheet semiconductor device such that there are gaps between the Si layers of each nanosheet stack, and the dielectric anchors the Si layers. The gaps are filled with an oxide that is removed after removing the dummy gate and prior to forming the replacement gate.

Claims

1. A structure used to fabricate a nanosheet semiconductor device, the structure comprising:

a substrate;

two or more sets of silicon layers formed above the substrate, wherein each of the two or more sets of silicon layers is parallel to others of the two or more sets of silicon layers in a first direction and each of the two or more sets of silicon layers includes gaps between the silicon layers of the respective set of silicon layers; and

a dielectric material configured to anchor each of the two or more sets of silicon layers at a first end and a second end along a second direction, which is perpendicular to the first direction.

2. The structure according to claim 1, wherein the dielectric material is silicon nitride.

3. The structure according to claim 1, wherein the dielectric material is between the silicon layers of each of the two or more sets of silicon layers and between adjacent ones of the two or more sets of silicon layers.

4. The structure according to claim 1, further comprising an oxide in the gaps between the silicon layers of each of the two or more sets of silicon layers.

5. The structure according to claim 1, further comprising a dummy gate stack formed above one of the two or more sets of silicon layers.

6. The structure according to claim 5, further comprising a gate oxide between the one of the two or more sets of silicon layers and the dummy gate stack.

7. The structure according to claim 5, wherein the dummy gate stack includes a dummy gate.

8. The structure according to claim 5, wherein the dummy gate stack includes a gate hardmask.

9. The structure according to claim 5, wherein the dummy gate stack includes a gate oxide hardmask.

10. The structure according to claim 5, further comprising low-k dielectric spacers on each side of the dummy gate stack.

11. A structure used to fabricate a nanosheet semiconductor device, the structure comprising:

a substrate;

two or more sets of silicon layers formed above the substrate, wherein each of the two or more sets of silicon layers is parallel to others of the two or more sets of silicon layers in a first direction and each of the two or more sets of silicon layers includes gaps between the silicon layers of each of the two or more sets of silicon layers; and

an inner spacer in a portion of the gaps of the two or more sets of silicon layers at a first end and a second end along a second direction, which is perpendicular to the first direction.

12. The structure according to claim 11, further comprising a pair of spacers formed above each of the two or more sets of silicon layers with a gap there between.

13. The structure according to claim 12, further comprising an inter-layer dielectric adjacent to each of the pair of spacers.

14. The structure according to claim 12, wherein the pair of spacers includes silicon boron carbon nitride (SiBCN).

15. The structure according to claim 12, wherein the pair of spacers includes silicon oxycarbonitride (SiOCN).

16. The structure according to claim 12, wherein the pair of spacers includes silicon oxynitride (SiON).

17. The structure according to claim 11, further comprising doped silicon germanium at the first end and the second end of the two or more sets of silicon layers.

18. The structure according to claim 17, further comprising silicon nitride (SiN) adjacent to and above the doped silicon germanium.

19. The structure according to claim 11, further comprising a gate oxide above one of the two or more sets of silicon layers.

20. The structure according to claim 11, further comprising oxide in the gaps between the silicon layers of each of the two or more sets of silicon layers.