NANOSHEET CHANNEL-TO-SOURCE AND DRAIN ISOLATION
First Claim
1. A structure used to fabricate a nanosheet semiconductor device, the structure comprising:
- a substrate;
two or more sets of silicon layers formed above the substrate, wherein each of the two or more sets of silicon layers is parallel to others of the two or more sets of silicon layers in a first direction and each of the two or more sets of silicon layers includes gaps between the silicon layers of the respective set of silicon layers; and
a dielectric material configured to anchor each of the two or more sets of silicon layers at a first end and a second end along a second direction, which is perpendicular to the first direction.
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Accused Products
Abstract
A method and structures are used to fabricate a nanosheet semiconductor device. Nanosheet fins including nanosheet stacks including alternating silicon (Si) layers and silicon germanium (SiGe) layers are formed on a substrate and etched to define a first end and a second end along a first axis between which each nanosheet fin extends parallel to every other nanosheet fin. The SiGe layers are undercut in the nanosheet stacks at the first end and the second end to form divots, and a dielectric is deposited in the divots. The SiGe layers between the Si layers are removed before forming source and drain regions of the nanosheet semiconductor device such that there are gaps between the Si layers of each nanosheet stack, and the dielectric anchors the Si layers. The gaps are filled with an oxide that is removed after removing the dummy gate and prior to forming the replacement gate.
24 Citations
20 Claims
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1. A structure used to fabricate a nanosheet semiconductor device, the structure comprising:
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a substrate; two or more sets of silicon layers formed above the substrate, wherein each of the two or more sets of silicon layers is parallel to others of the two or more sets of silicon layers in a first direction and each of the two or more sets of silicon layers includes gaps between the silicon layers of the respective set of silicon layers; and a dielectric material configured to anchor each of the two or more sets of silicon layers at a first end and a second end along a second direction, which is perpendicular to the first direction. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A structure used to fabricate a nanosheet semiconductor device, the structure comprising:
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a substrate; two or more sets of silicon layers formed above the substrate, wherein each of the two or more sets of silicon layers is parallel to others of the two or more sets of silicon layers in a first direction and each of the two or more sets of silicon layers includes gaps between the silicon layers of each of the two or more sets of silicon layers; and an inner spacer in a portion of the gaps of the two or more sets of silicon layers at a first end and a second end along a second direction, which is perpendicular to the first direction. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification