LIGHT EMITTING ELEMENT AND ELECTRON BEAM DEPOSITION APPARATUS FOR MANUFACTURING SAME

• US 20180090539A1
• Filed: 12/30/2015
• Published: 03/29/2018
• Est. Priority Date: 01/21/2015
• Status: Active Grant

• Current Assignee: LG Innotek Company Limited (LG Corporation)
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: SON, Su Hyoung, LEE, Keon Hwa, CHOI, Byeong Kyun, CHOI, Kwang Ki
• Granted Patent: US 10,586,828 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 21/67161 characterized by the layout of the process chambers
• CPC Class Codes: H01L 24/24 of an individual high density interconnect connector
• CPC Class Codes: H01L 27/156 two-dimensional arrays
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 33/005 Processes
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/10 with a light reflecting structure, e.g. semiconductor Bragg reflector
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/30 containing only elements of Group III and Group V of the Periodic Table
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/385 the electrode extending at least partially onto a side surface of the semiconductor body
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/42 Transparent materials
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A light emitting element of an embodiment may comprise: a light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, and first and second electrodes placed on the first and second conductive semiconductor layers respectively, wherein the light emitting structure includes a first mesa region, the first conductive type semiconductor layer includes a second mesa region, and the first electrode includes: a first region which is a partial region of the upper surface of the second mesa region; a second region which is the side surface of the second mesa region; and a third region arranged to extend from the edge of the side surface of the second mesa region, wherein the first, second, and third regions are formed such that the thickness of the first region (d1), the second region (d2), and the third region (d3) have a ratio of d1:d2:d3=1:0.9˜1.1:1.

Claims

1. A light emitting element comprising:

a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; and

first and second electrodes disposed respectively on the first and second conductive semiconductor layers,

wherein the light emitting structure includes a first mesa area, and the first conductive semiconductor layer includes a second mesa area,

wherein the first electrode includes;

a first area on a portion of an upper surface of the second mesa area;

a second area on a side surface of the second mesa area; and

a third area disposed so as to extend from an edge of the side surface of the second mesa area, and

wherein the side surface of the second mesa area has an inclination angle within a range from 70 degrees to 80 degrees relative to a bottom surface of the first conductive semiconductor layer.

2. The light emitting element according to claim 1, wherein the first area, the second area, and the third area have a thickness ratio as follows:

d1;

d2;

d3=1;

0.9 to 1.1;

1

(where d1 is a thickness of the first area, d2 is a thickness of the second area, and d3 is a thickness of the third area).

3. The light emitting element according to claim 1, wherein the side surface of the first mesa area has an inclination angle within a range from 70 degrees to 90 degrees relative to the upper surface of the second mesa area.

4. The light emitting element according to claim 1, wherein the horizontal length and the vertical length of the light emitting element is respectively within 100 μ

m.

5. An electron beam deposition apparatus of forming the first electrode according to claim 1, the apparatus comprising:

a thermal electron emitter;

a source feeder including a deposition material to be evaporated by a thermal electron supplied from the thermal electron emitter; and

a dome unit spaced apart from and disposed above the source feeder,

wherein the dome unit includes a plurality of substrate holders, and

wherein each of the substrate holders includes a variable jig, an inclination angle of which is adjusted.

6. The electron beam deposition apparatus according to claim 5, wherein each of the substrate holders includes a stationary jig configured to fix the variable jig to the dome unit.

7. The electron beam deposition apparatus according to claim 6, wherein the stationary jig and the variable jig have respective ring shapes having different diameters.

8. The electron beam deposition apparatus according to claim 7, wherein the variable jig is disposed inside the stationary jig.

9. The electron beam deposition apparatus according to claim 6, wherein the variable jig is coupled and fixed to the stationary jig at at least one point thereof.

10. The electron beam deposition apparatus according to claim 9, wherein each of the stationary jig and the variable jig has at least one screw-hole formed in a side surface thereof,

wherein the screw-hole in the stationary jig and the screw-hole in the variable jig are disposed to correspond to each other, and

wherein the stationary jig and the variable jig are coupled and fixed by a fastening screw disposed to penetrate respective corresponding screw-holes.

11. The electron beam deposition apparatus according to claim 10, further comprising a fixing piece disposed on the stationary jig to fix the fastening screw.

12. The electron beam deposition apparatus according to claim 6, wherein the variable jig is fixed at a predetermined inclination angle relative to the stationary jig.

13. The electron beam deposition apparatus according to claim 12, wherein the inclination angle at which the variable jig is fixed is within a range from 30 degrees to 45 degrees relative to the stationary jig.

14. The electron beam deposition apparatus according to claim 5, wherein the variable jig includes at least one fixing pin configured to fix a substrate.

15. The electron beam deposition apparatus according to claim 5, further comprising an inclination angle measurement device separably provided on the dome unit and configured to check the inclination angle of the variable jig.

16. A light emitting element comprising:

a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer;

first and second electrodes disposed respectively on the first and second conductive semiconductor layers; and

an insulation layer disposed on the light emitting structure exposed between the first electrode and the second electrode.

17. The light emitting element according to claim 16, wherein the insulation layer is disposed on an exposed surface of the light emitting structure and on the first electrode.

18. The light emitting element according to claim 16, wherein the first electrode is disposed so that a first surface thereof is in contact with the insulation layer and a portion of a second surface that faces the first surface is exposed.

19. The light emitting element according to claim 16, further comprising a conductive layer disposed on the second conductive semiconductor layer.

20. The light emitting element according to claim 19, wherein the second electrode is disposed on the conductive layer.