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NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME

  • US 20180090642A1
  • Filed: 11/30/2017
  • Published: 03/29/2018
  • Est. Priority Date: 11/18/2014
  • Status: Active Grant
First Claim
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1. A method for producing a nitride semiconductor device comprising:

  • providing a substrate made of a material other than a nitride semiconductor,wherein the material has a hexagonal crystal structure;

    wherein the substrate has a plurality of protrusions;

    wherein the substrate has an at least one flat section of an upper face of the substrate positioned between at least two protrusions;

    growing a first nitride semiconductor layer on the upper face of the substrate,wherein the first nitride semiconductor layer is made of monocrystalline AlN;

    wherein the first nitride semiconductor layer has an upper face that is a +c plane;

    wherein the first nitride semiconductor layer has a thickness in a range of 10 nm to 100 nm;

    wherein at least part of the first nitride semiconductor layer is grown on the at least one flat section of the upper face of the substrate;

    growing a second nitride semiconductor layer on the upper face of the first nitride semiconductor layer,wherein the second nitride semiconductor layer is made of InXAlYGa1-X-YN (0≦

    X, 0≦

    Y, X+Y<

    1);

    wherein, in an initial stage of growing the second nitride semiconductor layer, micronuclei are formed in multiple locations on the upper face of the first nitride semiconductor layer on the at least part of the first nitride semiconductor layer grown above the at least one flat section of the upper face of the substrate such that a plurality of upside-down hexagonal pyramid-shaped or upside-down hexagonal frustum-shaped recesses separate the micronuclei above the at least one flat section of the upper face of the substrate;

    wherein, after the initial stage of growing, further growth is performed;

    wherein the further growth is performed such that the second nitride semiconductor layer is grown to have at least one flat section of an upper face of the second nitride semiconductor layer at a height lower than an at least two upper ends of the at least two protrusions.

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