Field-Programmable Crossbar Array For Reconfigurable Computing
First Claim
1. A field-programmable crossbar array for reconfigurable computing, comprising:
- a plurality of crossbar modules interconnected together, each crossbar module is comprised of at least one interface circuit and an array of resistive memory devices arranged in columns and rows, such that resistive memory devices in each row of the array are interconnected by a respective bitline and resistive memory devices in each column of the array are interconnected by a respective wordline;
wherein each resistive memory device in the array of resistive memory devices has an associated threshold voltage and is configured to store a data value therein as a resistance value;
wherein the at least one interface circuit is electrically connected to each bitline in the array of resistive memory devices and is electrically connected to each wordline in the array of resistive memory devices, wherein the at least one interface circuit cooperatively operates with the array of resistive memory devices to perform an arithmetic operation on data values stored in the array of resistive memory devices.
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Abstract
For decades, advances in electronics were directly related to the scaling of CMOS transistors according to Moore'"'"'s law. However, both the CMOS scaling and the classical computer architecture are approaching fundamental and practical limits. A novel memory-centric, reconfigurable, general purpose computing platform is proposed to handle the explosive amount of data in a fast and energy-efficient manner. The proposed computing architecture is based on a single physical resistive memory-centric fabric that can be optimally reconfigured and utilized to perform different computing and data storage tasks in a massively parallel approach. The system can be tailored to achieve maximal energy efficiency based on the data flow by dynamically allocating the basic computing fabric to storage, arithmetic, and analog computing including neuromorphic computing tasks.
44 Citations
19 Claims
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1. A field-programmable crossbar array for reconfigurable computing, comprising:
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a plurality of crossbar modules interconnected together, each crossbar module is comprised of at least one interface circuit and an array of resistive memory devices arranged in columns and rows, such that resistive memory devices in each row of the array are interconnected by a respective bitline and resistive memory devices in each column of the array are interconnected by a respective wordline; wherein each resistive memory device in the array of resistive memory devices has an associated threshold voltage and is configured to store a data value therein as a resistance value; wherein the at least one interface circuit is electrically connected to each bitline in the array of resistive memory devices and is electrically connected to each wordline in the array of resistive memory devices, wherein the at least one interface circuit cooperatively operates with the array of resistive memory devices to perform an arithmetic operation on data values stored in the array of resistive memory devices. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A field-programmable crossbar array for reconfigurable computing, comprising:
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a plurality of crossbar modules interconnected together, each crossbar module is comprised of at least one interface circuit and an array of resistive memory devices arranged in columns and rows, such that resistive memory devices in each row of the array are interconnected by a respective bitline and resistive memory devices in each column of the array are interconnected by a respective wordline; wherein each resistive memory device in the array of resistive memory devices has an associated threshold voltage and is configured to store a data value therein as a resistance value; wherein the at least one interface circuit is electrically connected to each bitline in the array of resistive memory devices and is electrically connected to each wordline in the array of resistive memory devices, wherein the at least one interface circuit is configured to copy data values in a given crossbar module between rows or columns of the array of resistive memory devices in the given crossbar module and the at least one interface circuit cooperatively operates with the array of resistive memory devices to perform an arithmetic operation on data values stored in the array of resistive memory devices. - View Dependent Claims (12, 13, 14, 15)
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16. A field-programmable crossbar array for reconfigurable computing, comprising:
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a plurality of crossbar modules interconnected together, each crossbar module is comprised of at least one interface circuit and an array of resistive memory devices arranged in columns and rows, such that resistive memory devices in each row of the array are interconnected by a respective bitline and resistive memory devices in each column of the array are interconnected by a respective wordline; wherein each resistive memory device in the array of resistive memory devices has an associated threshold voltage and is configured to store a data value therein as a resistance value; wherein the at least one interface circuit is electrically connected to each bitline in the array of resistive memory devices and is electrically connected to each wordline in the array of resistive memory devices, wherein the at least one interface circuit cooperatively operates with the array of resistive memory devices to perform an arithmetic operation on data values stored in the array of resistive memory devices and to perform neuromorphic computing in the array of resistive memory devices. - View Dependent Claims (17)
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19. The field-programmable crossbar array of claim 18 wherein the at least one interface circuit performs an addition operation by applying a voltage to each bitline in the array of resistive memory devices and measures output current on one or more of the wordlines in the array of resistive memory devices, such that magnitude of the output current on a given wordline indicates a number of ones stored by the resistive memory devices in the respective column.
Specification