FACILITATION OF SPIN-COAT PLANARIZATION OVER FEATURE TOPOGRAPHY DURING SUBSTRATE FABRICATION
First Claim
Patent Images
1. A method of facilitating spin-coat planarization over feature topography during substrate fabrication, the method comprising:
- generating a topography map of features of a patterned substrate, the generating the topography map is based, at least in part, on a substrate patterning information;
generating a film-thickness model of a substrate after a spin-on coating is applied to the patterned substrate, wherein the model generation is based, at least in part, on the topography map and on a thickness of a film being deposited on the patterned substrate;
determining film thickness of an area of the film-thickness model falls with a defined range;
based upon that determining, declaring that area of the film-thickness model to be planar;
otherwise, generating suggested remedies to enhance planarization of that area of the film-thickness model, wherein the remedies affect the substrate fabrication.
1 Assignment
0 Petitions
Accused Products
Abstract
Described herein are technologies to facilitate device fabrication, especially those that involve spin-on coatings of a substrate (e.g., wafer). More particularly, technologies described herein facilitate the planarization (i.e., flatness) of spin-on coatings during the device fabrication to form a uniformly planar film or layer on the substrate. This abstract itself is not intended to limit the scope of this patent. The scope of the present invention is pointed out in the appending claims.
-
Citations
20 Claims
-
1. A method of facilitating spin-coat planarization over feature topography during substrate fabrication, the method comprising:
-
generating a topography map of features of a patterned substrate, the generating the topography map is based, at least in part, on a substrate patterning information; generating a film-thickness model of a substrate after a spin-on coating is applied to the patterned substrate, wherein the model generation is based, at least in part, on the topography map and on a thickness of a film being deposited on the patterned substrate; determining film thickness of an area of the film-thickness model falls with a defined range; based upon that determining, declaring that area of the film-thickness model to be planar; otherwise, generating suggested remedies to enhance planarization of that area of the film-thickness model, wherein the remedies affect the substrate fabrication. - View Dependent Claims (2)
-
-
3. A method of facilitating spin-coat planarization over feature topography during substrate fabrication, the method comprising:
-
receiving substrate patterning information for a semiconductor substrate; generating a topography map of a patterned substrate based, at least in part, on the substrate patterning information; receiving data regarding a plurality film thickness points associated with a film deposited on the semiconductor substrate; and generating a model of film thickness for the semiconductor substrate based, at least in part, on the data of the plurality of film thickness points. - View Dependent Claims (4, 5, 6, 7, 8)
-
-
9. A method comprising:
-
receiving substrate patterning information for a patterned substrate; receiving a film thickness model based, at least in part, on a thickness of a film being deposited on the patterned substrate and an arrangement of features on the patterned substrate; and generating a deposited film thickness model of the patterned substrate based, at least in part, on the substrate patterning information and the film thickness model. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
-
Specification