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LIGHT-EMITTING DEVICE

  • US 20180102458A1
  • Filed: 12/08/2017
  • Published: 04/12/2018
  • Est. Priority Date: 03/06/2014
  • Status: Active Grant
First Claim
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1. A light-emitting device comprising:

  • a permanent substrate;

    a light-emitting stack on the permanent substrate; and

    a semiconductor window layer comprising AlGaInP series material disposed between the permanent substrate and the light-emitting stack;

    wherein the light-emitting stack comprises a first conductive type semiconductor layer on the semiconductor window layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer and an active structure between the first conductive type semiconductor layer and the second conductive type semiconductor layer; and

    wherein the active structure comprises barrier layers and well layers, and each of the well layers disposed between two of the barrier layers, and the barrier layer closest to the first conductive type semiconductor layer and the barrier layer closest to the second conductive type semiconductor layer do not comprise phosphorus, while the rest of the barrier layers comprise phosphorus.

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