LIGHT-EMITTING DEVICE

• US 20180102458A1
• Filed: 12/08/2017
• Published: 04/12/2018
• Est. Priority Date: 03/06/2014
• Status: Active Grant

• Current Assignee: Epistar Corporation (Ennostar, Inc.)
• Original Assignee: Epistar Corporation (Ennostar, Inc.)
• Inventors: Lin, Yi-Chieh
• Granted Patent: US 10,381,512 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 33/002 having heterojunctions or graded gap
• CPC Class Codes: H01L 33/02 characterised by the semiconductor bodies
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/12 with a stress relaxation structure, e.g. buffer layer
• CPC Class Codes: H01L 33/30 containing only elements of Group III and Group V of the Periodic Table
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/58 Optical field-shaping elements

Abstract

The present disclosure provides a light-emitting device. The light-emitting device includes a substrate, a light-emitting stack on the substrate, and a semiconductor window layer comprising AlGaInP series material disposed between the substrate and the light-emitting stack.

Claims

1. A light-emitting device comprising:

a permanent substrate;

a light-emitting stack on the permanent substrate; and

a semiconductor window layer comprising AlGaInP series material disposed between the permanent substrate and the light-emitting stack;

wherein the light-emitting stack comprises a first conductive type semiconductor layer on the semiconductor window layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer and an active structure between the first conductive type semiconductor layer and the second conductive type semiconductor layer; and

wherein the active structure comprises barrier layers and well layers, and each of the well layers disposed between two of the barrier layers, and the barrier layer closest to the first conductive type semiconductor layer and the barrier layer closest to the second conductive type semiconductor layer do not comprise phosphorus, while the rest of the barrier layers comprise phosphorus.

2. The light-emitting device of claim 1, further comprising a patterned electrode on the light-emitting stack.

3. The light-emitting device of claim 2, wherein a pattern of the patterned electrode is mesh or circles from a top view of the light-emitting device.

4. The light-emitting device of claim 1, wherein the light-emitting device is devoid of Distributed Bragg Reflector (DBR) between the permanent substrate and the light-emitting stack.

5. The light-emitting device of claim 1, wherein a thickness of the semiconductor window layer is less than 1 μ

m.

6. The light-emitting device of claim 1, wherein the light-emitting stack emits infrared light and a wavelength of the infrared light is larger than 900 nm.

7. The light-emitting device of claim 1, wherein the semiconductor window layer comprises (Al_xGa_1-x)_0.5In_0.5P, wherein x is between 0.1 and 1.

8. The light-emitting device of claim 1, further comprising a contact layer on the light-emitting stack, and the contact layer comprising gallium arsenide (GaAs).

9. The light-emitting device of claim 8, wherein the contact layer is doped with zinc (Zn).

10. A light-emitting device comprising:

a permanent substrate;

a light-emitting stack emitted infrared light on the permanent substrate, wherein a wavelength of the infrared light is larger than 900 nm;

a semiconductor window layer comprising AlGaInP series material disposed between the permanent substrate and the light-emitting stack; and

a patterned electrode on the light-emitting stack, and a pattern of the patterned electrode is mesh or circles from a top view of the light-emitting device.

11. The light-emitting device of claim 10, wherein the light-emitting stack comprises:

a first conductive type semiconductor layer on the semiconductor window layer;

an active structure on the first conductive type semiconductor layer; and

a second conductive type semiconductor layer on the active structure.

12. The light-emitting device of claim 11, wherein the first conductive type semiconductor layer is doped with tellurium or selenium.

13. The light-emitting device of claim 11, wherein the active structure comprises barrier layers and well layers, and each of the well layers disposed between two of the barrier layers, and the barrier layer closest to the first conductive type semiconductor layer and the barrier layer closest to the second conductive type semiconductor layer do not comprise phosphorus, while the rest of the barrier layers comprise phosphorus.

14. The light-emitting device of claim 10, wherein the light-emitting device is devoid of Distributed Bragg Reflector (DBR) between the permanent substrate and the light-emitting stack.

15. The light-emitting device of claim 10, wherein the permanent substrate comprises gallium arsenide (GaAs).

16. The light-emitting device of claim 10, wherein the patterned electrode comprises gold.

17. The light-emitting device of claim 10, further comprising a buffer layer between the permanent substrate and the semiconductor window layer.

18. The light-emitting device of claim 10, wherein the semiconductor window layer comprises (Al_xGa_1-x)_0.5In_0.5P, wherein x is between 0.1 and 1.

19. The light-emitting device of claim 10, further comprising a contact layer on the light-emitting stack, and the contact layer comprising gallium arsenide (GaAs).

20. The light-emitting device of claim 19, wherein the contact layer is doped with zinc (Zn).