PACKAGE METHOD OF OLED ELEMENT AND OLED PACKAGE STRUCTURE

• US 20180102505A1
• Filed: 04/26/2016
• Published: 04/12/2018
• Est. Priority Date: 03/17/2016
• Status: Active Grant

• Current Assignee: TCL China Star Optoelectronics Technology Co. Ltd. (TCL Technology Group Corp.)
• Original Assignee: Shenzhen China Star Optoelectronics Technology Co., Ltd. (TCL Technology Group Corp.)
• Inventors: Qian, Jiajia
• Granted Patent: US 10,784,468 B2
• Time in Patent Office: Days
• CPC Class Codes: H10K 50/841 Self-supporting sealing arrangements
• CPC Class Codes: H10K 50/844 Encapsulations
• CPC Class Codes: H10K 50/8445 multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
• CPC Class Codes: H10K 59/10 OLED displays
• CPC Class Codes: H10K 71/00 Manufacture or treatment specially adapted for the organic devices covered by this subclass

Abstract

The present invention provides a package method of an OLED element and an OLED package structure. In the package method of the OLED element, according to the present invention, by manufacturing a circle of the retaining wall at the periphery of the OLED element, and then forming the laminated film covering the OLED element in the region surrounded by the retaining wall, and the laminated film comprises the few first barrier layers and the few buffer layers which are alternately stacking, and ultimately, forming the second barrier layer which completely covers the buffer layer and the top of the retaining wall on the outermost buffer layer of the laminated film, the OLED package structure of extremely strong sealing can be obtained. In the package method, a protective shield of extremely strong sealing for the OLED element is formed with the retaining wall and the outermost second barrier layer.

Claims

1. A package method of an OLED element, comprising steps of:

step 1, providing a TFT substrate, and forming an OLED element and a circle of retaining wall at a periphery of the OLED element on the TFT substrate;

step 2, forming a first stopper layer covering the OLED element in a region surrounded by the retaining wall on the TFT substrate, and forming a buffer layer on the first barrier layer;

step 3, repeating operation of the step 2 with few times until an upper surface of the outermost buffer layer is close to or even with a top surface of the retaining wall, and thus to obtain a laminated thin film which is constructed by alternately stacking the few first barrier layers and the few buffer layers;

step 4, forming a second stopper layer on the laminated thin film, and the second barrier layer completely covers the laminated thin film and a top of the retaining wall to accomplish package to the OLED element.

2. The package method of the OLED element according to claim 1, wherein specific implementation of the step 1 comprises steps of:

step 11, providing the TFT, and forming the OLED element on the TFT substrate with evaporation;

step 12, arranging a forming region of the retaining wall on the TFT substrate, and employing a mask to shelter other regions except the forming region on the TFT substrate, and depositing inorganic material on the TFT substrate with low temperature plasma enhanced chemical vapor deposition or atomic layer deposition, and forming the circle of the retaining wall at the periphery of the OLED element.

3. The package method of the OLED element according to claim 1, wherein specific implementation of the step 1 comprises steps of:

step 11′

, depositing inorganic material on the TFT substrate with low temperature plasma enhanced chemical vapor deposition or atomic layer deposition to form an inorganic material layer covering the TFT substrate, and employing one photolithographic process to pattern the inorganic material layer to obtain the circle of the retaining wall at the periphery of the TFT substrate;

step 12′

, forming the OLED element in the region surrounded by the retaining wall on the TFT substrate with evaporation.

4. The package method of the OLED element according to claim 1, wherein in the step 2 and the step 3, a method of forming the first barrier layer is:

arranging a forming region of the first barrier layer on the TFT substrate, and employing a mask to shelter other regions except the forming region on the TFT substrate, and depositing inorganic material on the TFT substrate with low temperature plasma enhanced chemical vapor deposition or atomic layer deposition to form the first barrier layer.

5. The package method of the OLED element according to claim 1, wherein in the step 2 and the step 3, a manufacture method of the buffer layer is:

arranging a forming region of the buffer layer on the TFT substrate, and employing a mask to shelter other regions except the forming region on the TFT substrate, and depositing organic material on the TFT substrate with printing, evaporation or plasma enhanced chemical vapor deposition to form the buffer layer.

6. The package method of the OLED element according to claim 1, wherein both an area of the first barrier layer and an area of the buffer layer are equal to an area of the region surrounded by the retaining wall on the TFT substrate.

7. An OLED package structure, comprising a TFT substrate, an OLED element located on the TFT substrate, a circle of retaining wall located on the TFT substrate and at a periphery of the OLED element, a laminated thin film being located in a region surrounded by the retaining wall on the TFT substrate and covering the OLED element and a second barrier layer completely covering the laminated thin film and a top of the retaining wall;

the laminated thin film comprises the few first barrier layers and the few buffer layers, wherein the first barrier layers and the buffer layers are alternately located, and a first layer of thin films in the laminated thin film which directly covers the OLED element is the first barrier layer, and the outermost layer of thin films in the laminated thin film is the buffer layer.

8. The OLED package structure according to claim 7, wherein an upper surface of the outermost buffer layer in the laminated thin film is close to or even with a top surface of the retaining wall.

9. The OLED package structure according to claim 7, wherein both an area of the first barrier layer and an area of the buffer layer are equal to an area of the region surrounded by the retaining wall on the TFT substrate.

10. The OLED package structure according to claim 7, wherein material of the retaining wall, the first barrier layer and the second barrier layer is inorganic material;

material of the buffer layer is organic material.

11. A package method of an OLED element, comprising steps of:

step 1, providing a TFT substrate, and forming an OLED element and a circle of retaining wall at a periphery of the OLED element on the TFT substrate;

step 2, forming a first stopper layer covering the OLED element in a region surrounded by the retaining wall on the TFT substrate, and forming a buffer layer on the first barrier layer;

step 3, repeating operation of the step 2 with few times until an upper surface of the outermost buffer layer is close to or even with a top surface of the retaining wall, and thus to obtain a laminated thin film which is constructed by alternately stacking the few first barrier layers and the few buffer layers;

step 4, forming a second barrier layer on the laminated thin film, and the second barrier layer completely covers the laminated thin film and a top of the retaining wall to accomplish package to the OLED element;

wherein in the step 2 and the step 3, a method of forming the first barrier layer is;

arranging a forming region of the first barrier layer on the TFT substrate, and employing a mask to shelter other regions except the forming region on the TFT substrate, and depositing inorganic material on the TFT substrate with low temperature plasma enhanced chemical vapor deposition or atomic layer deposition to form the first barrier layer;

wherein in the step 2 and the step 3, a manufacture method of the buffer layer is;

arranging a forming region of the buffer layer on the TFT substrate, and employing a mask to shelter other regions except the forming region of the TFT substrate, and depositing organic material on the TFT substrate with printing, evaporation or plasma enhanced chemical vapor deposition to form the buffer layer.

12. The package method of the OLED element according to claim 11, wherein specific implementation of the step 1 comprises steps of:

step 11, providing the TFT, and forming the OLED element on the TFT substrate with evaporation;

step 12, arranging a forming region of the retaining wall on the TFT substrate, and employing a mask to shelter other regions except the forming region on the TFT substrate, and depositing inorganic material on the TFT substrate with low temperature plasma enhanced chemical vapor deposition or atomic layer deposition, and forming the circle of the retaining wall at the periphery of the OLED element.

13. The package method of the OLED element according to claim 11, wherein specific implementation of the step 1 comprises steps of:

step 11′

, depositing inorganic material on the TFT substrate with low temperature plasma enhanced chemical vapor deposition or atomic layer deposition to form an inorganic material layer covering the TFT substrate, and employing one photolithographic process to pattern the inorganic material layer to obtain the circle of the retaining wall at the periphery of the TFT substrate;

step 12′

, forming the OLED element in the region surrounded by the retaining wall on the TFT substrate with evaporation.

14. The package method of the OLED element according to claim 11, wherein both an area of the first barrier layer and an area of the buffer layer are equal to an area of the region surrounded by the retaining wall on the TFT substrate.