RF PRODUCTION USING NONLINEAR SEMICONDUCTOR JUNCTION CAPACITANCE

• US 20180102769A1
• Filed: 03/21/2017
• Published: 04/12/2018
• Est. Priority Date: 10/11/2016
• Status: Active Grant

• Current Assignee: Eagle Harbor Technolologies, Inc.
• Original Assignee: Eagle Harbor Technolologies, Inc.
• Inventors: Prager, James R., Ziemba, Timothy M., Miller, Kenneth E.
• Granted Patent: US 10,320,373 B2
• Time in Patent Office: Days
• CPC Class Codes: H03H 11/02 Multiple-port networks
• CPC Class Codes: H03K 5/12 by steepening leading or trailing edges

Abstract

Some embodiments include a high voltage nonlinear transmission line comprising a high voltage input configured to receive electrical pulses having a first peak voltage that is greater than 10 kV; a plurality of circuit elements electrically coupled with ground, each of the plurality of circuit elements includes a nonlinear semiconductor junction capacitance device; a plurality of inductors, at least one of the plurality of inductors is electrically coupled between two circuit elements of the plurality of circuit elements; and a high voltage output providing a high voltage output signal that oscillates at a frequency greater than 100 MHz about a voltage greater than 10 kV.

Claims

1. A high voltage nonlinear transmission line comprising:

a high voltage input configured to receive electrical pulses having a first peak voltage that is greater than 5 kV;

a plurality of circuit elements electrically coupled with ground, each of the plurality of circuit elements includes a nonlinear semiconductor junction capacitance device and an inductor, wherein each of the plurality of circuit elements is electrically coupled with at least one corresponding one of the plurality of circuit elements; and

a high voltage output that that oscillates at a frequency greater than 100 MHz about a voltage greater than 5 kV.

2. The high voltage nonlinear transmission line according to claim 1, wherein the high voltage output comprises an antenna.

3. The high voltage nonlinear transmission line according to claim 1, wherein each of the nonlinear semiconductor junction capacitance devices have a capacitance that changes nonlinearly with voltage.

4. The high voltage nonlinear transmission line according to claim 1, wherein the high voltage output signal has a second rise time that is faster than a first rise time of the high voltage input.

5. The high voltage nonlinear transmission line according to claim 1, wherein each of the plurality of inductors has an inductance less than about 500 nH.

6. The high voltage nonlinear transmission line according to claim 1, wherein each of the plurality of nonlinear semiconductor junction capacitance devices have an inductance less than about 100 nH.

7. The high voltage nonlinear transmission line according to claim 1, wherein the plurality of circuit elements comprises at least 30 circuit elements.

8. The high voltage nonlinear transmission line according to claim 1, wherein each of the nonlinear semiconductor junction capacitance devices comprises a plurality of nonlinear semiconductor junction capacitance devices arranged in parallel and/or series.

9. The high voltage nonlinear transmission line according to claim 1, wherein each of the plurality of nonlinear semiconductor junction capacitance devices have a capacitance at zero volts less than about 5 nF.

10. The high voltage nonlinear transmission line according to claim 1, wherein each of the plurality of nonlinear semiconductor junction capacitance devices comprise one or more diodes.

11. The high voltage nonlinear transmission line according to claim 1, wherein a stray inductance of each of the plurality of circuit elements is less than the inductance of the corresponding inductor of the respective circuit element.

12. A nonlinear transmission line comprising:

a high voltage input configured to receive electrical pulses having a first peak voltage that is greater than 5 kV having a first rise time;

a first nonlinear semiconductor junction capacitance device; and

a second nonlinear semiconductor junction capacitance device; and

a first inductor electrically coupled with the first nonlinear semiconductor junction capacitance device and the second nonlinear semiconductor junction capacitance device;

a third nonlinear semiconductor junction capacitance device; and

a second inductor electrically coupled with the second nonlinear semiconductor junction capacitance device and the third nonlinear semiconductor junction capacitance device;

a fourth nonlinear semiconductor junction capacitance device; and

a third inductor electrically coupled with the third nonlinear semiconductor junction capacitance device and the fourth nonlinear semiconductor junction capacitance device;

a fifth nonlinear semiconductor junction capacitance device; and

a fourth inductor electrically coupled with the fourth nonlinear semiconductor junction capacitance device and the fifth nonlinear semiconductor junction capacitance device;

a high voltage output providing a high voltage output signal that oscillates at a frequency greater than 100 MHz about a voltage greater than 5 kV; and

a fifth inductor electrically coupled with the fifth nonlinear semiconductor junction capacitance device and the high voltage output.

13. The nonlinear transmission line according to claim 12, wherein the high voltage output comprises an antenna.

14. The nonlinear transmission line according to claim 12, wherein the first inductor, the second inductor, the third inductor, the fourth inductor, and the fifth inductor have substantially the same inductance.

15. The nonlinear transmission line according to claim 12, wherein at least two of the first inductor, the second inductor, the third inductor, the fourth inductor, and the fifth inductor have different inductance.

16. The nonlinear transmission line according to claim 12, wherein the first nonlinear semiconductor junction capacitance device, the second nonlinear semiconductor junction capacitance device, the third nonlinear semiconductor junction capacitance device, the fourth nonlinear semiconductor junction capacitance device, and/or the fifth nonlinear semiconductor junction capacitance device each have a stray inductance less than about 100 nH.

17. The nonlinear transmission line according to claim 12, wherein the first inductor, the second inductor, the third inductor, the fourth inductor, and the fifth inductor each have an inductance less than about 500 nH.