Carbon Bridged Aminosilane Compounds for High Growth Rate Silicon-Containing Films
First Claim
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1. A method for depositing a film comprising silicon and oxygen onto a substrate, the method comprising the steps of:
- a) providing a substrate in a reactor;
b) introducing into the reactor at least one silicon precursor compound comprising at least one organoaminocarbosilane compound, wherein the at least one organoaminocarbosilane compound has at least one SiH2 or SiMeH group and is represented by the structure of Formula A;
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Abstract
Described herein are compositions and methods for forming silicon oxide films. In one aspect, the film is deposited from at least one precursor, wherein the at least one precursor has a structure represented by Formula A:
wherein R, R1, R2, R3, R4, and R5 are defined herein.
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Citations
20 Claims
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1. A method for depositing a film comprising silicon and oxygen onto a substrate, the method comprising the steps of:
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a) providing a substrate in a reactor; b) introducing into the reactor at least one silicon precursor compound comprising at least one organoaminocarbosilane compound, wherein the at least one organoaminocarbosilane compound has at least one SiH2 or SiMeH group and is represented by the structure of Formula A; - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 17, 18, 19)
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11. A composition for depositing a silicon oxide film or a carbon doped silicon oxide film using a vapor deposition process, wherein the composition comprises:
- at least one silicon precursor having a structure represented by Formula A;
- View Dependent Claims (12, 13, 14, 15, 16, 20)
- at least one silicon precursor having a structure represented by Formula A;
Specification