CMP COMPOSITIONS SELECTIVE FOR OXIDE AND NITRIDE WITH IMPROVED DISHING AND PATTERN SELECTIVITY
First Claim
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1. A chemical-mechanical polishing composition comprising:
- (a) a wet-process ceria abrasive,(b) a polyhydroxy aromatic carboxylic acid,(c) optionally, an ionic polymer of formula (I);
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Abstract
The invention provides a chemical-mechanical polishing composition containing a ceria abrasive, a polyhydroxy aromatic carboxylic acid, an ionic polymer of formula I:
wherein X1 and X2, Z1 and Z2, R1, R2, R3, and R4, and n are as defined herein, and water, wherein the polishing composition has a pH of about 1 to about 4.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon oxide, silicon nitride, and/or polysilicon.
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Citations
24 Claims
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1. A chemical-mechanical polishing composition comprising:
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(a) a wet-process ceria abrasive, (b) a polyhydroxy aromatic carboxylic acid, (c) optionally, an ionic polymer of formula (I); - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method of chemically-mechanically polishing a substrate comprising:
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(i) providing a substrate, (ii) providing a polishing pad, (iii) providing a chemical-mechanical polishing composition comprising; (a) a wet-process ceria abrasive, (b) a polyhydroxy aromatic carboxylic acid, (c) an ionic polymer of formula (I); - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
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22. A chemical-mechanical polishing composition comprising:
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(a) a wet-process ceria abrasive, (b) a polyhydroxy aromatic carboxylic acid, and (c) water, wherein the polishing composition has a pH of about 1 to about 4.5. - View Dependent Claims (23, 24)
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Specification