BONDED SEMICONDUCTOR STRUCTURES
First Claim
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1. A method, comprising:
- with an ion-implanted layer which is disposed between an epitaxial layer and a first semiconductor substrate, bonding the epitaxial layer directly to a second semiconductor substrate; and
splitting the ion-implanted layer to separate the first semiconductor substrate from the epitaxial layer completely.
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Abstract
A method is disclosed that includes operations as follows. With an ion-implanted layer which is disposed between an epitaxial layer and a first semiconductor substrate, the epitaxial layer is bonded directly to a second semiconductor substrate. The ion-implanted layer is split to separate the first semiconductor substrate from the epitaxial layer completely.
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Citations
20 Claims
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1. A method, comprising:
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with an ion-implanted layer which is disposed between an epitaxial layer and a first semiconductor substrate, bonding the epitaxial layer directly to a second semiconductor substrate; and splitting the ion-implanted layer to separate the first semiconductor substrate from the epitaxial layer completely. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method, comprising:
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bonding an epitaxial layer formed with a first semiconductor substrate and an ion-implanted layer that is formed between the epitaxial layer and the first semiconductor substrate, to a bonding oxide layer of a second semiconductor substrate; separating the first semiconductor substrate from the epitaxial layer, by removing the first semiconductor substrate together with a portion of the ion-implanted layer and keeping the epitaxial layer; and forming a first semiconductor device portion on the epitaxial layer, and an interconnect layer on the first semiconductor device portion. - View Dependent Claims (14, 15, 16, 17)
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18. A method, comprising:
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bonding an epitaxial layer to a second semiconductor substrate, wherein an ion-implanted layer is disposed on the epitaxial layer, and a first semiconductor substrate is disposed on the ion-implanted layer; splitting the ion-implanted layer to remove the first semiconductor substrate and keep the epitaxial layer; forming a first semiconductor device portion on the kept epitaxial layer; forming vias through the first semiconductor device portion and the epitaxial layer; and forming a first interconnect layer on the first semiconductor device portion. - View Dependent Claims (19, 20)
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Specification