SWITCH CIRCUIT WITH CONTROLLABLE PHASE NODE RINGING
First Claim
1. A switch circuit having a first terminal, a second terminal and a control terminal, the switch circuit comprising:
- a first MOS transistor and a second MOS transistor of a same conductivity type connected in parallel between the first terminal and the second terminal, the first and second MOS transistors having respective gate terminals coupled to the control terminal to receive a control signal to turn the first and second MOS transistors on or off,wherein the first MOS transistor is characterized by a first reverse gate-to-drain capacitance (Crss) and the second MOS transistor is characterized by a second Crss that is greater than the first Crss.
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Accused Products
Abstract
A switch circuit includes a first MOS transistor and a second MOS transistor of a same conductivity type connected in parallel between a first terminal and a second terminal of the switch circuit, the first and second MOS transistors having respective gate terminals coupled to the control terminal to receive a control signal to turn the first and second MOS transistors on or off. The first MOS transistor is characterized by a first reverse gate-to-drain capacitance (Crss) and the second MOS transistor is characterized by a second Crss that is greater than the first Crss.
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Citations
24 Claims
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1. A switch circuit having a first terminal, a second terminal and a control terminal, the switch circuit comprising:
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a first MOS transistor and a second MOS transistor of a same conductivity type connected in parallel between the first terminal and the second terminal, the first and second MOS transistors having respective gate terminals coupled to the control terminal to receive a control signal to turn the first and second MOS transistors on or off, wherein the first MOS transistor is characterized by a first reverse gate-to-drain capacitance (Crss) and the second MOS transistor is characterized by a second Crss that is greater than the first Crss. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method for forming a switch circuit, comprising:
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forming an array of trench transistor cells in a semiconductor layer of a first conductivity type, the trench transistor cells being defined by trench gate structures, each of said gate trench structures including a trench formed in the semiconductor layer and an insulated gate electrode formed in the trench; forming first body regions of a second conductivity type that is opposite the first conductivity type in a first subset of the trench transistor cells, the first body regions and trenches of the first subset of the trench transistor cells being characterized by a first distance from a bottom of the first body regions to a bottom of the gate trenches in the first subset associated with a first reverse gate-to-drain capacitance (Crss); forming second body regions of the second conductivity type that is opposite the first conductivity type in a second subset of the trench transistor cells, the second body regions and trenches of the second subset of the trench transistor cells being characterized by a second distance from a bottom of the second body regions to a bottom of the gate trenches in the second subset associated with a second reverse gate-to-drain capacitance (Crss), wherein the second distance is greater than the first distance; and forming source regions in the array of trench transistor cells. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21, 22, 23, 24)
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Specification