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SEMICONDUCTOR DEVICE

  • US 20180108737A1
  • Filed: 10/13/2017
  • Published: 04/19/2018
  • Est. Priority Date: 10/14/2016
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a semiconductor substrate;

    a transistor section provided in the semiconductor substrate; and

    a diode section provided in the semiconductor substrate being adjacent to the transistor section;

    whereinthe diode section comprises;

    a second conductivity-type anode region at least partially exposed on an upper surface of the semiconductor substrate;

    a first conductivity-type drift region provided below the anode region;

    a first conductivity-type cathode region provided below the drift region;

    a plurality of dummy trench portions that penetrate at least the anode region and are arrayed along a predetermined array direction;

    a contact portion provided along an extending direction of the plurality of dummy trench portions that is different from the array direction; and

    a second conductivity-type lower-surface side semiconductor region provided below the drift region and provided directly below an outer end portion of the contact portion in the extending direction.

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