PREPARATION METHODS FOR SEMICONDUCTOR LAYER AND TFT, TFT, ARRAY SUBSTRATE
First Claim
1. A preparation method for a semiconductor layer comprising:
- forming sidewalls at two ends of the semiconductor layer to be formed on a substrate;
carboxylating a carbon nanotube solution and making the carboxylated carbon nanotube solution on a surface of the substrate with the sidewalls formed to form a carbon nanotube film;
removing portions of the carbon nanotube film other than a portion between the sidewalls by etching process to form the semiconductor layer,wherein the sidewalls and the carbon nanotube film form a self-assembly.
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Abstract
Embodiments of the present disclosure provide preparation methods for a semiconductor layer and a TFT, a TFT and an array substrate. The preparation method for a semiconductor layer: includes forming a silicon dioxide film on a substrate; forming sidewalls at two ends of the semiconductor layer to be formed by patterning process; performing amination treatment on the sidewalls so that an aminosiloxane monolayer self-assembly is formed on the surface of the sidewalls; carboxylating a carbon nanotube solution and making the carboxylated carbon nanotube solution on the surface of the substrate with the sidewalls formed to form a carbon nanotube film; removing portions of the carbon nanotube film other than the portion between the sidewalls to form a semiconductor layer.
8 Citations
20 Claims
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1. A preparation method for a semiconductor layer comprising:
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forming sidewalls at two ends of the semiconductor layer to be formed on a substrate; carboxylating a carbon nanotube solution and making the carboxylated carbon nanotube solution on a surface of the substrate with the sidewalls formed to form a carbon nanotube film; removing portions of the carbon nanotube film other than a portion between the sidewalls by etching process to form the semiconductor layer, wherein the sidewalls and the carbon nanotube film form a self-assembly. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 15, 16, 17, 18, 19)
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10. A TFT comprising:
- a gate, a gate insulating layer, a semiconductor layer, a source and a drain, and sidewalls disposed on two sides of the semiconductor layer, wherein the sidewalls and the semiconductor layer form a self-assembly.
- View Dependent Claims (11, 12, 13, 14, 20)
Specification