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THROUGH SILICON VIA (TSV) FORMATION IN INTEGRATED CIRCUITS

  • US 20180111823A1
  • Filed: 10/26/2016
  • Published: 04/26/2018
  • Est. Priority Date: 10/26/2016
  • Status: Active Grant
First Claim
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1. An apparatus, comprising:

  • a microelectromechanical systems (MEMS) substrate including a MEMS device;

    an application specific integrated circuit (ASIC) substrate having a device surface, a backside opposite the device surface, an ASIC on the device surface, and a through silicon via (TSV) connecting the device surface to the backside, wherein the TSV is formed of conductive polysilicon; and

    wherein the MEMS substrate and ASIC substrate are bonded at the backside of the ASIC substrate such that the device surface is distal the MEMS substrate.

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