CONTROL CIRCUIT, SEMICONDUCTOR STORAGE DEVICE, AND METHOD OF CONTROLLING SEMICONDUCTOR STORAGE DEVICE
First Claim
1. A control circuit that controls a memory including a storage region and a redundant region, the control circuit comprising:
- a detector that detects a defective block in the memory; and
a controller that switches, when the detector has detected the defective block, a data storage scheme of the first block detected as the defective block from a first storage scheme to a second storage scheme in which the number of bits of data to be stored in each of memory elements is smaller than the number of bits of data to be stored in each of the memory elements in the first storage scheme, and that stores a portion of data stored in the first block in the first storage scheme to be stored in the first block in the second storage scheme and stores the remaining portion of the data stored in the first block in the first storage scheme to be stored in a second block of the redundant region.
1 Assignment
0 Petitions
Accused Products
Abstract
A control circuit that controls a memory including a storage region and a redundant region, the control circuit includes a detector that detects a defective block in the memory, and a controller that switches, when the detector has detected the defective block, a data storage scheme of the first block detected as the defective block from a first storage scheme to a second storage scheme in which the number of bits of data to be stored in each of memory elements is smaller than the number of bits of data to be stored in each of the memory elements in the first storage scheme, and that stores a portion of data stored in the first block in the first storage scheme to be stored in the first block in the second storage scheme.
4 Citations
15 Claims
-
1. A control circuit that controls a memory including a storage region and a redundant region, the control circuit comprising:
-
a detector that detects a defective block in the memory; and a controller that switches, when the detector has detected the defective block, a data storage scheme of the first block detected as the defective block from a first storage scheme to a second storage scheme in which the number of bits of data to be stored in each of memory elements is smaller than the number of bits of data to be stored in each of the memory elements in the first storage scheme, and that stores a portion of data stored in the first block in the first storage scheme to be stored in the first block in the second storage scheme and stores the remaining portion of the data stored in the first block in the first storage scheme to be stored in a second block of the redundant region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
-
-
13. A semiconductor storage device comprising:
-
a memory that includes a storage region and a redundant region; and a control circuit that controls the memory, wherein the control circuit includes a detector that detects a defective block in the memory, and a controller that switches, when the detector has detected the defective block, a data storage scheme of the first block detected as the defective block from a first storage scheme to a second storage scheme in which the number of bits of data to be stored in each of memory elements is smaller than the number of bits of data to be stored in each of the memory elements in the first storage scheme, and that stores a portion of data stored in the first block in the first storage scheme to be stored in the first block in the second storage scheme and stores the remaining portion of the data stored in the first block in the first storage scheme to be stored in a second block of the redundant region.
-
-
14. A method of controlling a semiconductor storage device including a memory that includes a storage region and a redundant region, comprising:
-
when a control circuit of the semiconductor storage device determines whether or not the control circuit has detected a defective block in the memory, and the control circuit has detected the defective block, causing the control circuit to switch a data storage scheme of the first block detected as the defective block from a first storage scheme to a second storage scheme in which the number of bits of data to be stored in each of memory elements is smaller than the number of bits of data to be stored in each of the memory elements in the first storage scheme; causing the control circuit to store a portion of data stored in the first block in the first storage scheme to be stored in the first block in the second storage scheme; and causing the control circuit to store the remaining portion of the data stored in the first block in the first storage scheme to be stored in a second block of the redundant region. - View Dependent Claims (15)
-
Specification