Precursors and Flowable CVD Methods for Making Low-K Films to Fill Surface Features Features
First Claim
1. A method for depositing a silicon-containing film, the method comprising:
- placing a substrate comprising at least one surface feature into a reactor;
introducing into the reactor at least one organoaminosilane compound having the structure of Formula I;
(R1R2N)4-nSi—
R3n
(I),wherein R1, R2 and R3 are selected from the group consisting of hydrogen, C1 to C10 linear or branched alkyl, cyclic alkyl, alkenyl, alkynyl, and aryl; and
n=0, 1, 2, 3, wherein at least one of R1, R2 and R3 is not hydrogen; and
at least one multifunctional organoamine compound having the structure of Formula II;
NR4R5R6
(II)wherein R4, R5 and R6 are each independently selected from the group consisting of H, a C1-C4 alkylmonoamino group, a C1-C4 alkyldiamino group, and a C1-C4 alkyltriamino group, wherein at least one of R4, R5 and R6 is not hydrogen; and
at least partially reacting the at least one organoaminosilane compound and the multifunctional organoamine compound, optionally in the presence of an energy source, to form a flowable liquid oligomer wherein the flowable liquid oligomer forms a coating on the substrate and at least partially fills at least a portion of the at least one surface feature.
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Abstract
A method for depositing a silicon-containing film, the method comprising: placing a substrate comprising at least one surface feature into a flowable CVD reactor; introducing into the reactor at least one silicon-containing compound and at least one multifunctional organoamine compound to at least partially react the at least one silicon-containing compound to form a flowable liquid oligomer wherein the flowable liquid oligomer forms a silicon oxide coating on the substrate and at least partially fills at least a portion of the at least one surface feature. Once cured, the silicon carbonitride coating has excellent mechanical properties.
15 Citations
35 Claims
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1. A method for depositing a silicon-containing film, the method comprising:
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placing a substrate comprising at least one surface feature into a reactor; introducing into the reactor at least one organoaminosilane compound having the structure of Formula I;
(R1R2N)4-nSi—
R3n
(I),wherein R1, R2 and R3 are selected from the group consisting of hydrogen, C1 to C10 linear or branched alkyl, cyclic alkyl, alkenyl, alkynyl, and aryl; and
n=0, 1, 2, 3, wherein at least one of R1, R2 and R3 is not hydrogen; and
at least one multifunctional organoamine compound having the structure of Formula II;
NR4R5R6
(II)wherein R4, R5 and R6 are each independently selected from the group consisting of H, a C1-C4 alkylmonoamino group, a C1-C4 alkyldiamino group, and a C1-C4 alkyltriamino group, wherein at least one of R4, R5 and R6 is not hydrogen; and at least partially reacting the at least one organoaminosilane compound and the multifunctional organoamine compound, optionally in the presence of an energy source, to form a flowable liquid oligomer wherein the flowable liquid oligomer forms a coating on the substrate and at least partially fills at least a portion of the at least one surface feature. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35)
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28. The method of claim 1 wherein the at least one organoaminosilane compound having the structure of Formula (I) is an organoaminocarbosilane selected from the group consisting of
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29. The method of claim 1 wherein the at least one multifunctional organoamine compound having the structure of Formula (II) is selected from the group consisting of
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30. The method of claim 1 wherein the at least one multifunctional organoamine compound having the structure of Formula (II) is selected from the group consisting of ethylenediamine, 1,2-diaminopropane, 1,3-diaminopropane, and butane-1,4-diamine.
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31. The method of claim 2 further comprising exposing the at least one organoaminosilane compound and the multifunctional organoamine compound to a plasma energy source.
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32. The method of claim 1 further comprising the step of thermally annealing the flowable liquid oligomer at one or more temperatures ranging from about 100°
- C. to about 1000°
C. to densify at least a portion of the materials, followed by broadband UV treatment at the temperature ranging from 100°
C. to 1000°
C.
- C. to about 1000°
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33. The method of claim 1 wherein the resultant silicon-containing film is exposed to a post-deposition treatment selected from the group consisting of hydrogen plasma, helium plasm, argon plasma, ammonia plasma, water (H2O) plasma, oxygen plasma, ozone (O3) plasma, NO plasma, N2O plasma, carbon monoxide (CO) plasma, carbon dioxide (CO2) plasma and combinations thereof, chemical treatment, ultraviolet light exposure, Infrared exposure, and electron beam exposure.
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34. The film produced by the method of claim 1.
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35. The film produced by the method of claim 32.
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Specification