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Precursors and Flowable CVD Methods for Making Low-K Films to Fill Surface Features Features

  • US 20180122631A1
  • Filed: 10/20/2017
  • Published: 05/03/2018
  • Est. Priority Date: 11/01/2016
  • Status: Active Grant
First Claim
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1. A method for depositing a silicon-containing film, the method comprising:

  • placing a substrate comprising at least one surface feature into a reactor;

    introducing into the reactor at least one organoaminosilane compound having the structure of Formula I;


    (R1R2N)4-nSi—

    R3n



    (I),wherein R1, R2 and R3 are selected from the group consisting of hydrogen, C1 to C10 linear or branched alkyl, cyclic alkyl, alkenyl, alkynyl, and aryl; and

    n=0, 1, 2, 3, wherein at least one of R1, R2 and R3 is not hydrogen; and

    at least one multifunctional organoamine compound having the structure of Formula II;


    NR4R5R6



    (II)wherein R4, R5 and R6 are each independently selected from the group consisting of H, a C1-C4 alkylmonoamino group, a C1-C4 alkyldiamino group, and a C1-C4 alkyltriamino group, wherein at least one of R4, R5 and R6 is not hydrogen; and

    at least partially reacting the at least one organoaminosilane compound and the multifunctional organoamine compound, optionally in the presence of an energy source, to form a flowable liquid oligomer wherein the flowable liquid oligomer forms a coating on the substrate and at least partially fills at least a portion of the at least one surface feature.

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