USE OF SILYL BRIDGED ALKYL COMPOUNDS FOR DENSE OSG FILMS
First Claim
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1. A chemical vapor deposition method for depositing an organosilicate film on at least a part of a substrate, the process comprising the steps of:
- providing a substrate within a vacuum chamber;
introducing into the vacuum chamber a gaseous structure forming composition comprising at least one organosilicon precursor selelcted from the group consisting of Formula (I) and Formula (II);
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Abstract
Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same.
14 Citations
28 Claims
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1. A chemical vapor deposition method for depositing an organosilicate film on at least a part of a substrate, the process comprising the steps of:
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providing a substrate within a vacuum chamber; introducing into the vacuum chamber a gaseous structure forming composition comprising at least one organosilicon precursor selelcted from the group consisting of Formula (I) and Formula (II); - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28)
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Specification