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INTEGRATION OF VERTICAL-TRANSPORT TRANSISTORS AND ELECTRICAL FUSES

  • US 20180122913A1
  • Filed: 10/31/2016
  • Published: 05/03/2018
  • Est. Priority Date: 10/31/2016
  • Status: Active Grant
First Claim
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1. A structure comprising:

  • a vertical-transport field-effect transistor including a fin, a gate structure overlapping a portion of the fin that functions as a channel, a first source/drain region, and a second source/drain region, the gate structure arranged in a vertical direction between the first source/drain region and the second source/drain region; and

    a vertical electrical fuse including a fuse link, a first electrode, and a second electrode connected by the fuse link with the first electrode, the fuse link arranged in the vertical direction between the first electrode and the second electrode,wherein the first source/drain region is included in a first region of a doped semiconductor layer and the first electrode is included in a second region of the doped semiconductor layer.

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