PHOTOREACTIVE SENSOR INCLUDING OPTICAL AMPLIFICATION PHOTOTRANSISTOR, AND DISPLAY PANEL AND VEHICLE CONTROL SYSTEM INCLUDING PHOTOREACTIVE SENSOR

• US 20180129043A1
• Filed: 12/16/2015
• Published: 05/10/2018
• Est. Priority Date: 04/24/2015
• Status: Active Grant

• Current Assignee: University-Industry Cooperation Group of KyungHee University
• Original Assignee: University-Industry Cooperation Group of KyungHee University
• Inventors: KIM, Sun Kook, HONG, Seong In, HONG, Young Ki, KIM, Dong Han
• Granted Patent: US 10,890,761 B2
• Time in Patent Office: Days
• CPC Class Codes: B60K 2360/1438 Touch screens
• CPC Class Codes: B60K 2360/33 Illumination features
• CPC Class Codes: B60K 35/10 Input arrangements, i.e. from user to vehicle, associated with vehicle functions or specially adapted therefor
• CPC Class Codes: G02B 27/01 Head-up displays
• CPC Class Codes: G06F 3/0416 Control or interface arrangements specially adapted for digitisers
• CPC Class Codes: G06F 3/042 by opto-electronic means
• CPC Class Codes: G06V 40/1318 using electro-optical elements or layers, e.g. electroluminescent sensing
• CPC Class Codes: G06V 40/1359 Extracting features related to ridge properties; Determining the fingerprint type, e.g. whorl or loop
• CPC Class Codes: G06V 40/1376 Matching features related to ridge properties or fingerprint texture
• CPC Class Codes: H01L 31/022466 made of transparent conductive layers, e.g. TCO, ITO layers
• CPC Class Codes: H01L 31/09 Devices sensitive to infrared, visible or ultraviolet radiation H01L31/101 takes precedence
• CPC Class Codes: H01L 31/10 characterised by potential barriers, e.g. phototransistors
• CPC Class Codes: H01L 31/112 characterised by field-effect operation, e.g. junction field-effect phototransistor

Abstract

Disclosed is a photoreactive sensor including an optical amplification phototransistor, in which a non-overlapping region that does not overlap with a local gate electrode between a source electrode and a drain electrode is formed and which senses an optical image through the non-overlapping region for amplify photoconductivity; and a contact light emitting device that is formed on the optical amplification phototransistor and generates the optical image corresponding to a contacted surface upon contact with an object.

Claims

1. A photoreactive sensor, comprising:

an optical amplification phototransistor, in which a non-overlapping region that does not overlap with a local gate electrode between a source electrode and a drain electrode is formed and which senses an optical image through the non-overlapping region for amplify photoconductivity; and

a contact light emitting device that is formed on the optical amplification phototransistor and generates the optical image corresponding to a contacted surface upon contact with an object.

2. The photoreactive sensor according to claim 1, wherein the contact light emitting device comprises:

a transparent electrode layer connected to one terminal of a power source;

a light emitting layer that is formed on the transparent electrode layer and generates the optical image corresponding to the contacted surface upon contact with an object forming a ground; and

a dielectric layer formed on the light emitting layer.

3. The photoreactive sensor according to claim 1, wherein the non-overlapping region is formed in a lateral direction of each of the source electrode and the drain electrode or in a lateral direction of any one of the source electrode and the drain electrode.

4. The photoreactive sensor according to claim 1, wherein the channel region is formed of a transition metal chalcogen compound (transition metal dichalcogenide).

5. The photoreactive sensor according to claim 4, wherein the transition metal chalcogen compound comprises at least one of molybdenum disulfide (MoS₂), molybdenum diselenide (MoSe₂), tungsten diselenide (WSe₂), molybdenum ditelluride (MoTe₂), and tin diselenide (SnSe₂).

6. The photoreactive sensor according to claim 1, wherein each of the gate electrode, the source electrode, and the drain electrode comprises at least one of metallic materials and transparent conductive materials,

wherein the transparent conductive material comprises at least one of an amorphous oxide, a crystalline oxide, graphene, and a polymeric organic substance.

7. The photoreactive sensor according to claim 1, wherein the optical amplification phototransistor comprises:

a lower local gate electrode formed on a substrate;

a gate insulating layer formed on the substrate to cover the lower local gate electrode;

the source electrode and the drain electrode respectively formed at opposite sides of the gate insulating layer; and

the channel region comprising the gate insulating layer and a non-overlapping region, wherein the non-overlapping region is formed between the source electrode and the drain electrode and does not overlap with the lower local gate electrode.

8. The photoreactive sensor according to claim 1, wherein the optical amplification phototransistor comprises:

a channel region that is formed on an insulating layer and comprises the non-overlapping region;

an upper local gate electrode that is formed by interposing a gate insulating layer on the channel region and does not overlap with the non-overlapping region; and

the source and drain electrodes that are formed on the insulating layer and are connected to each other by the channel region.

9. A display panel, comprising:

a light source part generating light;

a switching transistor sampling image information corresponding to each pixel;

a first storage capacitor storing the image information;

a driving transistor switching current supply to the light source part by reference voltage of the stored image information;

an optical amplification phototransistor that transmits the switched current supply to the light source part, and senses light generated from the light source part and reflected from a target subject to amplify photoreactivity; and

a second storage capacitor that stores photoreactive information comprising at least one of fingerprint information, contact information, and biometric information of the target subject based on a reactivity degree of the amplified light.

10. The display panel according to claim 9, wherein the optical amplification phototransistor comprises a channel region comprising a non-overlapping region that is disposed between a source electrode and a drain electrode and does not overlap with a local gate electrode, and senses the reflected light through the non-overlapping region that amplifies photoconductivity.

11. The display panel according to claim 9, wherein the biometric information comprises information on a tissue or a function related to at least any one of melanin pigment concentration, hemoglobin concentration, pulse and an oxygen saturation degree.

12. The display panel according to claim 9, wherein the biometric information comprises information on a tissue and a function related to at least any one of temperature and humidity of a skin tissue.

13. A display panel, comprising:

a light source part that generates light to acquire photoreactive information comprising at least one of fingerprint information, contact information, and biometric information of a target subject;

a switching transistor that samples image information corresponding to each pixel;

a first storage capacitor that stores the image information;

a driving transistor that switches current supply to an illuminant by reference voltage of the stored image information;

an optical amplification phototransistor that transmits the switched current supply to the illuminant, and senses light generated from the light source part and reflected from the target subject to amplify photoreactivity; and

a second storage capacitor that stores the photoreactive information based on a reactivity degree of the amplified light.

14. A display panel, comprising:

a light source part that comprises a transparent electrode layer connected to one terminal of a power source;

a light emitting layer that is formed on the transparent electrode layer and generates light to correspond the contacted surface upon contact with a target subject forming a ground; and

a dielectric layer formed on the light emitting layer; and

a photoreactive sensor that comprises a switching transistor sampling image information corresponding to each pixel;

a first storage capacitor storing the image information;

a driving transistor switching current supply to the light source part by reference voltage of the stored image information;

an optical amplification phototransistor that transmits the switched current supply, and senses light generated from the light source part and reflected from the target subject to amplify photoreactivity; and

a second storage capacitor that stores photoreactive information comprising at least one of fingerprint information, contact information, and biometric information of the target subject based on a reactivity degree of the amplified light.

15. A vehicle control system, comprising:

an acquisition part that senses and amplifies light reflected from a target object based on an optical amplification phototransistor formed on at least one of a door, a trunk, a handle, a display, a start button, a smart key, and a predetermined position of a vehicle, and acquires photoreactive information comprising at least one of fingerprint information, contact information, and biometric information of the target object based on a reactivity degree of the amplified light;

a control command generator that generates a control command by analyzing the acquired photoreactive information; and

a controller that controls generation of the control command and controls an electronic unit performing an operation corresponding to the generated control command.

16. The vehicle control system according to claim 15, wherein the optical amplification phototransistor is disposed between a source electrode and a drain electrode, comprises a channel region comprising a non-overlapping region not overlapping with a local gate electrode, and senses the reflected light through the non-overlapping region amplifying photoconductivity.

17. The vehicle control system according to claim 15, wherein the acquisition part comprises:

a light source part that generates light;

a switching transistor that samples image information corresponding to each pixel;

a first storage capacitor that stores the image information;

a driving transistor that switches current supply to at least one of the light source part and an illuminant by reference voltage of the stored image information;

the optical amplification phototransistor that transmits the switched current supply to at least one of the light source part and the illuminant, and senses light generated from the light source part and reflected from the target object to amplify photoreactivity; and

a second storage capacitor that acquires the photoreactive information on the amplified light.

18. The vehicle control system according to claim 17, wherein at least one of the light source part and the illuminant is formed on a lower part of a backplane based on a backlight method, and comprises at least one of a halogen, a Quantum Dot (QD), a light emitting diode (LED), and an Organic Light Emitting Diode (OLED).

19. The vehicle control system according to claim 17, wherein a gate and a drain of the switching transistor are respectively connected to a scan line and a data line,

a gate of the driving transistor is connected to a source of the switching transistor,

the first storage capacitor is connected in parallel with a gate and a source of the driving transistor,

a source and a drain of the optical amplification phototransistor are respectively connected to the driving transistor, and a second storage capacitor connected in parallel with the light source part.

20. The vehicle control system according to claim 17, wherein the light source part generates light radiated to a photoreactive region when the current supply to the illuminant is switched, and the optical amplification phototransistor senses the light reflected from the target object located on the photoreactive region to amplify the photoreactivity.

21. The vehicle control system according to claim 17, wherein the light source part comprises:

a transparent electrode layer that is connected to one terminal of a power source;

a light emitting layer that is formed on the transparent electrode layer and generates light to correspond to the contacted surface upon contact of the target object forming a ground; and

a dielectric layer that is formed on the light emitting layer.